IRF7702TRPBF ,-12V Single P-Channel HEXFET Power MOSFET in a TSSOP-8 packagePD-96027IRF7702PbFHEXFET Power MOSFET Ultra Low On-ResistanceV R max IDSS DS(on) D -1.8V Rated0 ..
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IRF7702TRPBF
-12V Single P-Channel HEXFET Power MOSFET in a TSSOP-8 package
International PD-96027
TOR Rech h er
HEXFET® Power MOSFET
o y/rt/L/gli sen-Resistance VDss RDS(on) max In
. 'P Changeel MOSFET 0.014@sz = -4.5V -8.0A
-12V 0.019@VGS = -2.5V -7.0A
o Very Small SOIC Package
. Low Profile ( < 1.1mm) 0.027@Vss - -1.8V -5.8A
q Available in Tape & Reel
0 Lead-Free
7 D El
Description 1: (eli. Zl
HEXFET® Power MOSFETs from International Rectifier l: G s E
utilize advanced processing techniques to achieve ex- '2 E
tremely low on-resistance per silicon area. This benefit, 1 = D 8 = D
combined with the ruggedized device design, that Inter- 2 -- S 7 -- 8
national Rectifier is well known for, provides thedesigner 2:: Cris, TSSOP-8
with an extremely efficient and reliable device for
battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.1mm) allows it to flt
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain- Source Voltage -12 V
ID @ TC = 25''C Continuous Drain Current, VGS @ -4.5V 18.0
ID @ TC = 70°C Continuous Drain Current, VGS @ -4.5V 17.0 A
IDM Pulsed Drain Current (D HO
PD @Tc = 25°C Power Dissipation 1.5 W
PD @Tc = 70°C Power Dissipation 0.96
Linear Derating Factor 0.01 W/°C
VGS Gate-to-Source Voltage 1 8.0 V
To, TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Parameter Max. Units
RQJA Maximum Junction-to-Ambien) 83 °C/W
1
02/06/06
|RF7702PbF
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -12 - - V VGs = 0V, ID = -250PA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coemcient - -0.007 - V/°C Reference to 25°C, ID = -1mA
- - 0.014 VGS = -4.5V, ID = -8.0A ©
Roam Static Drain-to-Source On-Resistance - - 0.019 Q Vss = -2.5V, ID = -7.0A ©
- - 0.027 Vss = -1.8V, ID = -5.8A ©
VGS(th) Gate Threshold Voltage -0.45 - -1.2 V Vros = VGs, ID = -250pA
9ts Forward Transconductance 26 - - S Vos = -1OV, ID = -8.0A
loss Drain-to-Source Leakage Current - - 1.0 pA I/os i -12V, VGS It,/ - o
- - -25 Vos - -9.6V, VGS - 0V, TJ - 70 C
less Gate-to-Source Forward Leakage - - -100 nA VGS = -8.0V
Gate-to-Source Reverse Leakage - - 100 VGS = 8.0V
% Total Gate Charge - 54 81 ID = -8.0A
Qgs Gate-to-Source Charge - 7.8 12 nC Vros = -9.6V
di Gate-to-Drain ("Miller") Charge - 15 23 Yas = -4.5V©
td(on) Turn-On Delay Time - 16 - ns VDD = -6.0V
tr Rise Time - 21 - ID = -1.OA
tdom Turn-Off Delay Time - 320 - Ro = 6.09
tf Fall Time - 250 - Rs = 6.09 (D
Ciss Input Capacitance - 3470 - VGs = 0V
Cass Output Capacitance - 1040 - pF Vros = -10V
Crss Reverse Transfer Capacitance - 670 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - -1.5 showing the
ISM Pulsed Source Current A integral reverse G
(Body Diode) (D - - -70 p-n junction diode. s
Vso Diode Forward Voltage - - -1.2 V To = 25°C, Is = -1.5A, Vss = 0V ©
trr Reverse Recovery Time - 58 87 ns To = 25°C, IF = -1.5A
Qrr Reverse RecoveryCharge - 41 62 nC di/dt = 100A/ps ©
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature.
© Pulse width 5 300ps; duty cycles 2%.
C3) When mounted on 1 inch square copper board, t<10 sec
