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IRF7702GTRPBF
-12V Single P-Channel HEXFET Power MOSFET in a Halogen-Free TSSOP-8 package
International
TOR Rectifier
PD- 96147
RF7702GPbF
HEXFET® Power MOSFET
o Itll tr, sen-Resistance Voss 'hasion) max ID
. s], Ch a 6" MOSFET 0.014@sz = -4.5v -8.0A
0 - anne
-12V 0.019@VGS = -2.5V -7.0A
o Very Small SOIC Package
. Low Profile ( < 1.1mm) 0.027@Vss = -1.81/ -5.8A
q Available in Tape & Reel
0 Lead-Free
o Halogen-Free
7 D El
Description 1: (eli. Zl
HEXFET6 Power MOSFETs from International Rectifier l: G s E
utilize advanced processing techniques to achieve ex- '1 E
tremely low on-resistance per silicon area. This benefit, 1 = D 8 = D
combined with the ruggedized device design, that Inter- 2 -- s 7 -- s
national Rectifier is well known for, provides thedesigner 2:: Cris, TSSOP-8
with an extremely efficient and reliable device for
battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.1mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain- Source Voltage -12 V
ID © TA = 25°C Continuous Drain Current, l/ss © -4.5V -8.0
ID @ TA = 70°C Continuous Drain Current, Vss @ -4.5V -7.0 A
G, Pulsed Drain Current co -70
PD @TA = 25°C Power Dissipation 1.5 W
PD @TA = 70°C Power Dissipation 0.96
Linear Derating Factor 0.01 W/°C
Vss Gate-to-Source Voltage 1 8.0 V
To, TSTG Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Max. Units
RQJA Maximum Junction-to-Ambient® 83 °C/W
1
05/07/08
IRF7702GPbF
International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)Dss Drain-to-Source Breakdown Voltage -12 - - V Vss = 0V, ID = -250pA
AV(BR)DSgATJ Breakdown Voltage Temp. Coefficient - -0.007 - V/°C Reference to 25°C, ID = -1mA
- - 0.014 Vss = -4.5V, ID = -8.0A ©
RDS(on) Static Drain-to-Source On-Resistance - - 0.019 Q Vss = -2.5V, ID = -7.0A ©
- - 0.027 l/es = -1.8V, ID = -5.8A ©
Vegan) Gate Threshold Voltage -0.45 - -1.2 V l/os = Vas, ID = -250uA
gfs Forward Transconductance 26 - - S Vos = -1OV, ID = -8.0A
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = -12V, l/ss = 0V 0
- - -25 VDS = -9.6V, VGS = ov, TJ = 70 C
less Gate-to-Source Forward Leakage - - -100 nA Ves = -8.0V
Gate-to-Source Reverse Leakage - - 100 Vss = 8.0V
09 Total Gate Charge - 54 81 ID = -8.0A
Qgs Gate-to-Source Charge - 7.8 12 nC VDs = -9.6V
di Gate-to-Drain ("Miller") Charge - 15 23 Vas = M.5V©
td(on) Turn-On Delay Time - 16 - ns VDD = -6.0V
t, Rise Time - 21 - ID = -1.0A
td(oti) Turn-Off Delay Time - 320 - RD = 6.09
tt Fall Time - 250 - Rs = 6.09 (D
Ciss Input Capacitance - 3470 - Vss = 0V
Coss Output Capacitance - 1040 - pF Vos = -10V
Crss Reverse Transfer Capacitance - 670 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - -1.5 showing the
ISM Pulsed Source Current A integral reverse G
(Body Diode) (D - - -70 p-n junction diode. s
l/so Diode Forward Voltage - - -1.2 V Tu = 25°C, Is = -1.5A, Ves = 0V ©
tr, Reverse Recovery Time - 58 87 ns TI, = 25°C, IF = -1.5A
Qrr Reverse RecoveryCharge - 41 62 nC di/dt = 100A/ps ©
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature.
© Pulse width 5 300ps; duty cycle S 2%.
C3) When mounted on 1 inch square copper board, t<10 sec
