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IRF7702-IRF7702TR
-12V Single P-Channel HEXFET Power MOSFET in a TSSOP-8 package
PD - 93849C
International
TOR Rectifier PROVISIONAL IRF7702
HEXFET® Power MOSFET
Ultra Low On-Resistance VDss RDS‘on) max In
-1.8V Rated
0.014@VGS = -4.5V -8.0A
P-Channel MOSFET -
Very Small SOIC Package -12V 0.019@VGs - -2.5V -7.0A
Low Prohle ( < 1.1mm) 0.027@Vss = -1.8V -5.8A
Available in Tape & Reel
[I D Tsl
Description 1: (ig. Zl
HEXFET® Power MOSFETs from International Rectifier l: G s E
utilize advanced processing techniques to achieve ex- '1 El
tremely low on-resistance per silicon area. This benefit, 1 = L) 8-- D
combined with the ruggedized device design, that Inter- 2= s 7= s
. . . . . 3-- s o: s
netlonal Rectifier Iswellkn_own forev.i.1e.sthtdtsignfr 4= G 5-- D TSSOP-8
with an extremely efhcient and reliable device for
battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.1mm) allows it to flt
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain- Source Voltage -12 V
ID @ TC = 25''C Continuous Drain Current, VGS @ -4.5V 18.0
ID @ TC = 70°C Continuous Drain Current, VGS @ -4.5V 17.0 A
IDM Pulsed Drain Current © HO
PD @Tc = 25°C Power Dissipation 1.5 W
PD @Tc = 70°C Power Dissipation 0.96
Linear Derating Factor 0.01 W/°C
VGS Gate-to-Source Voltage 1 8.0 V
To, TSTG Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Max. Units
ReJA Maximum Junction-to-Ambient© 83 °C/W
1
6/19/00
IRF7702 PROVISIONAL International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -12 - - V VGS = 0V, ID = -250PA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coefficient - -0.007 - V/°C Reference to 25°C, ID = -1mA
- - 0.014 VGS = -4.5V, ID = -8.0A ©
Roam Static Drain-to-Source On-Resistance - - 0.019 Q Vss = -2.5V, ID = -7.0A ©
- - 0.027 Vss = -1.8V, ID = -5.8A C)
VGS(th) Gate Threshold Voltage -0.45 - -1.2 V Vros = VGs, ID = -250pA
9ts Forward Transconductance 26 - - S Vos = -1OV, ID = -8.0A
loss Drain-to-Source Leakage Current - - 1.0 pA I/os i -12V, I/cs It,/ - o
- - -25 Vos - -9.6V, VGS - 0V, TJ - 70 C
less Gate-to-Source Forward Leakage - - -100 nA VGS = -8.0V
Gate-to-Source Reverse Leakage - - 100 VGS = 8.0V
% Total Gate Charge - 54 81 ID = -8.0A
Qgs Gate-to-Source Charge - 7.8 12 nC Vros = -9.6V
di Gate-to-Drain ("Miller") Charge - 15 23 V93 = -4.5V®
td(on) Turn-On Delay Time - 16 - ns VDD = -6.0V
tr Rise Time - 21 - ID = -1.OA
tdom Turn-Off Delay Time - 320 - Ro = 6.09
tf Fall Time - 250 - Rs = 6.09 (D
Ciss Input Capacitance - 3470 - VGs = 0V
Cass Output Capacitance - 1040 - pF Vros = -10V
Crss Reverse Transfer Capacitance - 670 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - -1.5 showing the
ISM Pulsed Source Current A integral reverse G
(Body Diode) OD - - -70 p-n junction diode. s
Vso Diode Forward Voltage - - -1.2 V To = 25°C, Is = -1.5A, Vss = 0V C)
trr Reverse Recovery Time - 58 87 ns To = 25°C, IF = -1.5A
Qrr Reverse RecoveryCharge - 41 62 nC di/dt = 100A/ps ©
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature.
© Pulse width 3 300ps; duty cycle f 2%.
© When mounted on 1 inch square copper board, t<10 sec
