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IRF7701TRPBF
-12V Single P-Channel HEXFET Power MOSFET in a TSSOP-8 package
PD - 96094
International
Tart, Rectifier IRF7701PbF
HEXFET6 Power MOSFET
0 Ultra Low On-Resistance
o P-Channel MOSFET Vnss RDs(on) max ID
0 Very Small SOIC Package 0.011 @VGS = -4.5V -10A
0 Low Profile (< 1 Amm) -12V 0.015@Vss = -2.5v -8.5A
q Available In Tape & Reel 0.022@Ves = -1.8V -7.0A
0 Lead-Free
Description
HEXFET8 power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex- II D El
tremely low on-resistance per silicon area. This benefit, I: El
combined with the ruggedized device design , that Inter- I: El
national Rectifier is well known for, provides thedesigner IZ G s El
with an extremely efficient and reliable device for use
in battery and load management. "c l: 2 SD
3= s 6= s
The TSSOP-8 package, has 45% less footprintarea of the 4= G 5= D TSSOP-8
standard SO-8. This makes the TSSOP-8 an ideal device
for applications where printed circuit board space is at a
premium.
The low profile (<1 .1 mm) of the TSSOP-8 will allow it to fit
easily into extremely thin application environments such
as portable electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain- Source Voltage -12 V
ID @ TA = 25°C Continuous Drain Current, l/ss @ -4.5V t10
ID @ TA = 70°C Continuous Drain Current, I/ss © -4.5V t8.0 A
IDM Pulsed Drain Current (D :80
PD @TA = 25°C Power Dissipation 1.5 W
Po @TA = 70°C Power Dissipation 0.96
Linear Derating Factor 12 mW/°C
Vss Gate-to-Source Voltage 1 8.0 V
To, TSTG Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Max. Units
ReJA Maximum Junction-to-Ambient) 83 °C/W
1
12/08/06
IRF7701PbF
International
TOR Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -12 - - V Vas = 0V, ID = -250pA
AV(BR,Dss/ATJ Breakdown Voltage Temp. Coefficient - -0.006 - V/°C Reference to 25°C, ID = -1mA
- - 0.011 Vss = -4.5V, ID = -10A ©
RDs(on) Static Drain-to-Source On-Resistance - - 0.015 Q VGS = -2.5V, ID = -8.5A ©
- - 0.022 1/ss = -1.sv, ID = -7.0A ©
Vegan) Gate Threshold Voltage -0.45 - -1.2 V Vos = Vas, ID = -250PA
gfs Forward Transconductance 21 - - S Vos = -10V, ID = -10A
lass Drain-to-Source Leakage Current - - 1.0 pA Vos = -12V, l/tss = 0V Cl
- - -25 Ihos = -9.6V, l/ss = 0V, To = 70 C
less Gate-to-Source Forward Leakage - - -100 nA Vas = -8.0V
Gate-to-Source Reverse Leakage - - 100 Ves = 8.0V
% Total Gate Charge - 69 100 ID = -8.0A
Qgs Gate-to-Source Charge - 9.1 14 nC Vos = -9.6V
di Gate-to-Drain ("Miller") Charge - 21 32 Vss = M.5V©
tdwn) Turn-On Delay Time - 19 - ns VDD = -6.0V
t, Rise Time - 20 - ID = -1.0A
tdem) Turn-Off Delay Time - 240 - RD = 6.09
tt Fall Time - 220 - Vas = M.5V©
Ciss Input Capacitance - 5050 - Ves = 0V
Coss Output Capacitance - 1520 - pF Vos = -10V
Crss Reverse Transfer Capacitance - 1120 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - -1.5 showing the
ISM Pulsed Source Current A integral reverse G
(Body Diode) OD - - -80 p-n junction diode. s
Vso Diode Forward Voltage - - -1.2 V TJ = 25°C, Is = -1.5A, Vss = 0V ©
tn Reverse Recovery Time - 52 78 ns Tu = 25°C, IF = -1.5A
Qrr Reverse RecoveryCharge -- 53 80 nC di/dt = 100A/ps ©
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature.
C) Pulse width 3 300ys; duty cycle 3 2%.
© When mounted on 1 inch square copper board, t<10 sec
