IRF7701TR ,-12V Single P-Channel HEXFET Power MOSFET in a TSSOP-8 packageapplications where printed circuit board space is at apremium.The low profile (<1.1mm) of the TSSOP ..
IRF7701TR ,-12V Single P-Channel HEXFET Power MOSFET in a TSSOP-8 packageapplications where printed circuit board space is at apremium.The low profile (<1.1mm) of the TSSOP ..
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ISL4221EIR ,QFN Packaged/ +/-15kV ESD Protected/ +2.7V to +5.5V/ 150Nanoamp/ 250kBps/ RS-232 Transmitters/ReceiversFeatures+2.7V to +5.5V, 150Nanoamp, 250kBps, • Available in Near Chip Scale QFN (5mmx5mm) Package R ..
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ISL4223EIR ,QFN Packaged/ +/-15kV ESD Protected/ +2.7V to +5.5V/ 150Nanoamp/ 250kBps/ RS-232 Transmitters/Receiversfeatures an automatic powerdown function Related Literaturethat powers down the on-chip power-suppl ..
ISL4223EIR ,QFN Packaged/ +/-15kV ESD Protected/ +2.7V to +5.5V/ 150Nanoamp/ 250kBps/ RS-232 Transmitters/ReceiversFeaturesoperational, and even lower standby, power consumption is critical. Efficient on-chip charg ..
ISL4238EIRZ , QFN Packaged, ±15kV ESD Protected, 2.7V to 5.5V, 10Nanoamp, 250kbps/1Mbps, RS-232 Transceivers with Enhanced Automatic Power-down
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IRF7701-IRF7701TR
-12V Single P-Channel HEXFET Power MOSFET in a TSSOP-8 package
International
:rartRectifier
PD - 93940
IRF7701
HEXFET© Power MOSFET
0 Ultra Low On-Resistance V R
. P-Channel MOSFET DSS 0 01 'lltt,, - 4 5V 18A
0 Very Small SOIC Package . GS - .
0 Low Profile (< 1.1mm) -12V 0.015@VGs = -2.5V -8.5A
o Available in Tape & Reel 0.022@VGS = -1.81/ -7.OA
Description
HEXFETQ power MOSFETs from International Rectifier [I D El
utilize advanced processing techniques to achieve ex- 1: El
tremely low on-resistance per silicon area. This benefit, I: El
combined with the ruggedized device design , that Inter- 4 G s El
national Rectifier is well known for, provides thedesigner [E 5
with an extremely efficient and reliable device for use i = D a: D
in battery and load management. g: g 2::
. 4-- G 5-- D TSSOP-8
The TSSOP-8 package, has 45% less footprint area ofthe
standard SO-8. This makes the TSSOP-8 an ideal device
for applications where printed circuit board space is at a
premium.
The low profile (<1.1mm) ofthe TSSOP-8 will allow it to fit
easily into extremely thin application environments such
as portable electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter Max. Units
Vros Drain- Source Voltage -12 V
ID @ TA = 25''C Continuous Drain Current, VGS @ -4.5V :10
ID @ TA = 70°C Continuous Drain Current, VGS @ -4.5V i8.0 A
IDM Pulsed Drain Current co t80
Po @TA = 25°C Power Dissipation 1.5 W
Pro @TA = 70°C Power Dissipation 0.96
Linear Derating Factor 12 mW/°C
Ves Gate-to-Source Voltage * 8.0 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 "C
Thermal Resistance
Parameter Max. Units
RQJA Maximum Junction-to-Ambient) 83 ''C/W
1
6/21/00
IRF7701
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -12 - - V VGs = 0V, ID = -250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coemcient - -0.006 - V/°C Reference to 25°C, ID = -1mA
- - 0.011 VGs = -4.5V, ID = -10A ©
RDSW Static Drain-to-Source On-Resistance - - 0.015 n VGS = -2.5V, ID = -8.5A ©
- - 0.022 VGS = -1.8V, ID = -7.0A ©
Vesah) Gate Threshold Voltage -0.45 - -1.2 V Vos = VGs, ID = -250PA
gts Forward Transconductance 21 - - S Vros = -10V, ID = -10A
loss Drain-to-Source Leakage Current - - 1.0 pA Vros f -12V, VGS It,/ - Ct
- - -25 V03 - -9.6V, Vss - 0V, To - 70 C
less Gate-to-Source Forward Leakage - - -100 nA VGs = -8.0V
Gate-to-Source Reverse Leakage - - 100 VGS = 8.0V
09 Total Gate Charge - 69 100 ID = -8.0A
Qgs Gate-to-Source Charge - 9.1 14 no Vos = -9.6V
di Gate-to-Drain ("Miller") Charge - 21 32 VGS = -4.5V©
tum) Turn-On Delay Time - 19 - ns Vroro = -6.0V
tr Rise Time - 20 - ID = -1.0A
td(off) Turn-Off Delay Time - 240 - Ro = 6.on
tt Fall Time - 220 - VGs = -4.5V©
Ciss Input Capacitance - 5050 - Ves = 0V
Coss Output Capacitance - 1520 - pF Vos = -10V
Crss Reverse Transfer Capacitance - 1120 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - -1.5 showing the
ISM Pulsed Source Current A integral reverse G
(Body Diode) (D - - -80 p-n junction diode. s
Vso Diode Forward Voltage - - -1.2 V To = 25°C, Is = -1.5A, VGs = 0V ©
tn Reverse Recovery Time - 52 78 ns To = 25°C, IF = -1.5A
Q,, Reverse RecoveryCharge - 53 80 nC di/dt = 100Alps ©
Notes:
OD Repetitive rating; pulse width limited by
max. junction temperature.
© Pulse width S 300ps; duty cycle f 2%.
© When mounted on 1 inch square copper board, t<10 sec
