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IRF7700GTRPBF
-20V Single P-Channel HEXFET Power MOSFET in a Halogen-Free TSSOP-8 package
International
Tart, Rectifier
PD - 96155A
IlRF7700GPbF
HEXFET6 Power MOSFET
q Ultra Low On-Resistance
. P-Channel MOSFET Voss RDsamy max ID
-20V 0.015@V = -4.5V -8.6A
q Very Small SOIC Package GS
0 Low Profile (< 1.1mm) 0.024@VGs = -2.5V -7.3A
0 Available in Tape & Reel
o Lead-Free
o Halogen-Free
Description
HEXFETO power MOSFETs from International Rectifier I: D El
utilize advanced processing techniques to achieve ex- E El
tremely low on-resistance per silicon area. This benefit, E El
combined with the ruggedized device design , that Inter- I: G s El
national Rectifier is well known for, provides the de-
signer with an extremely efficient and reliable device 1 -- D 8 -- D
for use in battery and load management. :2 2::
4 _ G 5 -- D TSSOP-8
The TSSOP-8 package, has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium.
The low profile (<1 .1 mm) of the TSSOP-8 will allow it to fit
easily into extremely thin application environments such
as portable electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain- Source Voltage -20 V
ID @ TA = 25°C Continuous Drain Current, Vss @ -4.5V -8.6
ID @ TA = 70°C Continuous Drain Current, Vas @ -4.5V -6.8 A
IDM Pulsed Drain Current co -68
PD @TA = 25°C Power Dissipation 1.5 W
PD @TA = 70°C Power Dissipation 0.96
Linear Derating Factor 0.01 W/°C
Vss Gate-to-Source Voltage i 12 V
To, TSTG Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Max. Units
RQJA Maximum Junction-to-Ambient® 83 °C/W
1
05/15/09
IRF7700GPbF International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 - - V l/ss = 0V, ID = -250pA
AV(BH)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.011 - V/°C Reference to 25°C, ID = -1mA
Rroson) Static Drain-to-Source On-Resistance - - 0.015 Q Vss = -4.5V, ID = -8.6A ©
- - 0.024 l/ss = -2.5V, ID = -7.3A ©
VGsah) Gate Threshold Voltage -0.45 - -1.2 V Vos = kss, ID = -250pA
gfs Forward Transconductance -2O - - S Vos = -10V, ID = -8.6A
Koss Drain-to-Source Leakage Current - - -1.0 PA Vos = -16V, VGS = 0V
- - -25 Vos = -16V, Vas = 0V, Tu = 70°C
less Gate-to-Source Forward Leakage - - -100 n A Vas = -12V
Gate-to-Source Reverse Leakage - - 100 VGS = 12V
09 Total Gate Charge - 59 89 ID = -8.6A
Qgs Gate-to-Source Charge - 10 15 no Vos = -16V
di Gate-to-Drain ("Miller") Charge - 19 29 Vss = -5.OV©
tum) Turn-On Delay Time - 19 - Von = -10V
t, Rise Time -- 4O -- ns ID = -1.0A
tum) Turn-Off Delay Time - 120 - Ra = 6.09
tt Fall Time - 130 - l/ss = -4.5V©
Ciss Input Capacitance - 4300 - Ves = 0V
Coss Output Capacitance - 880 - pF VDS = -15V
Crss Reverse Transfer Capacitance - 580 - f = TBDkHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - -1.5 showing the
ISM Pulsed Source Current A integral reverse G
(Body Diode) OD - - -68 p-n junction diode. s
Vso Diode Forward Voltage - - -1.2 V TJ = 25°C, Is = -1.5A, Vss = 0V ©
tn Reverse Recovery Time - 130 200 ns Tu = 25°C, IF = -1.5A
Qrr Reverse RecoveryCharge -- 180 270 no di/dt = 100A/ps ©
Notes:
C) Repetitive rating; pulse width limited by © When mounted on 1 inch square copper board, t<10 sec
max. junction temperature.
© Pulse width S 300ps; duty cycle 3 2%.
2
