IRF7665S2TRPBF ,A 100V Digital Audio Single N-Channel HEXFET Power MOSFET in a DirectFET SB package rated at 14.4 amperes.applications.Absolute Maximum RatingsParameter Max. UnitsVDrain-to-Source Voltage 100DSVVGS Gate-to ..
IRF7700GTRPBF ,-20V Single P-Channel HEXFET Power MOSFET in a Halogen-Free TSSOP-8 packageapplications where printed circuit board spaceis at a premium.The low profile (<1.1mm) of the TSSOP ..
IRF7701 ,-12V Single P-Channel HEXFET Power MOSFET in a TSSOP-8 packagePD - 93940IRF7701®HEXFET Power MOSFETl Ultra Low On-ResistanceV R max IDSS DS(on) Dl P-Channel MO ..
IRF7701 ,-12V Single P-Channel HEXFET Power MOSFET in a TSSOP-8 packagePD - 93940IRF7701®HEXFET Power MOSFETl Ultra Low On-ResistanceV R max IDSS DS(on) Dl P-Channel MO ..
IRF7701GTRPBF ,-12V Single P-Channel HEXFET Power MOSFET in a Halogen-Free TSSOP-8 package IRF7701GPbF®HEXFET Power MOSFET Ultra Low On-Resistance P-Channel MOSFET V R max IDS ..
IRF7701TR ,-12V Single P-Channel HEXFET Power MOSFET in a TSSOP-8 packageapplications where printed circuit board space is at apremium.The low profile (<1.1mm) of the TSSOP ..
ISL4221EIR ,QFN Packaged/ +/-15kV ESD Protected/ +2.7V to +5.5V/ 150Nanoamp/ 250kBps/ RS-232 Transmitters/ReceiversFeatures+2.7V to +5.5V, 150Nanoamp, 250kBps, • Available in Near Chip Scale QFN (5mmx5mm) Package R ..
ISL4221EIR ,QFN Packaged/ +/-15kV ESD Protected/ +2.7V to +5.5V/ 150Nanoamp/ 250kBps/ RS-232 Transmitters/ReceiversApplicationsThe ISL4221E is a 1 driver, 1 receiver device and the • Any Space Constrained System Re ..
ISL4223EIR ,QFN Packaged/ +/-15kV ESD Protected/ +2.7V to +5.5V/ 150Nanoamp/ 250kBps/ RS-232 Transmitters/Receiversfeatures an automatic powerdown function Related Literaturethat powers down the on-chip power-suppl ..
ISL4223EIR ,QFN Packaged/ +/-15kV ESD Protected/ +2.7V to +5.5V/ 150Nanoamp/ 250kBps/ RS-232 Transmitters/ReceiversFeaturesoperational, and even lower standby, power consumption is critical. Efficient on-chip charg ..
ISL4238EIRZ , QFN Packaged, ±15kV ESD Protected, 2.7V to 5.5V, 10Nanoamp, 250kbps/1Mbps, RS-232 Transceivers with Enhanced Automatic Power-down
ISL4241EIRZ-T , QFN Packaged, ±15kV ESD Protected, 2.7V to 5.5V, 10Nanoamp, 250kbps, 2.7V to 5.5V, 10Nanoamp, 250kbps,
IRF7665S2TRPBF
A 100V Digital Audio Single N-Channel HEXFET Power MOSFET in a DirectFET SB package rated at 14.4 amperes.
PD - 96239
IRF7665S2TRPbF
lRF7665S2TR1PbF
International DlGlTALAUt_MOSFET
TOR Rectifier
Features Key Parameters
q Key parameters optimized for Class-D audio amplifier Vros 100 V
applications
. Low RDs(on) for improved efficiency RDS(on) typ. © Vss = 10V 51 m9
q Low Q for better THD and improved efficiency
. Low ii,', for better THD and lower EMI q, typ. 8.3 nC
. Low package stray inductance for reduced ringing and lower Ream) typ. 3.5 Q
. Can deliver up to 100W per channel into 89 with no heatsink tD
a Dual sided cooling compatible
. Compatible with existing surface mount technologies
q RoHS compliant containing no lead or bromide
o Lead-Free (Qualified up to 260°C Reflow)
. Industrial Qualified
SB DirectFETm lSOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details)
IGBISCI I IM2IM4l |L4|L6|L8|
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the
latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse
recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as
efficiency, THD, and EMI.
The lRF7665S2TR/TfR1PbF device utilizes DirectFETTM packaging technology. DirectFET"I packaging technology offers lower
parasitic inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance im-
proves EMI performance by reducing the voltage ringing that accompanies fast current transients. The DirectFETTM package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red
or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and
processes. The DirectFETTM package also allows dual sided cooling to maximize thermal transfer in power systems, improving
thermal resistance and power dissipation. These features combine to make this MOSFET a highly efficient, robust and reliable
device for Class-D audio amplifier applications.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 100 V
Vas Gate-to-Source Voltage 1- 20
ID @ To = 25°C Continuous Drain Current, Vss @ 10V 14.4
ID @ Tc = 100°C Continuous Drain Current, Ves @ 10V 10.2 A
ID @ TA = 25°C Continuous Drain Current, l/ss @ 10V 4.1
IDM Pulsed Drain Current C) 58
PD @TC = 25°C Maximum Power Dissipation 30
PD @Tc = 100°C Power Dissipation 15 W
PD @TA = 25°C Power Dissipation 2.4
Linear Derating Factor 0.2 W/°C
TJ Operating Junction and -55 to + 175 "C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
ROJA Junction-to-Ambient © _ 63
ROJA Junction-to-Ambient © 12.5 --
RNA Junction-to-Ambient © 20 _ °CNV
Rosrcan Junction-to-Can OM)) - 5.0
RMPCB Junction-to-PCB Mounted 1.4 -
Notes co through (D are on page 2
1
07/02/09
IRF7665S2TR/TR1PbF
International
1:0.R Rectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(Bnmss Drain-to-Source Breakdown Voltage 100 - - V Vss = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.10 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 51 62 mf2 Ves = 10V, k, = 8.9A C9
VGS(th) Gate Threshold Voltage 3.0 4.0 5.0 V I/os = Vas, k, = 25pA
loss Drain-to-Source Leakage Current - - 20 PA Vos = 100V, l/ss = 0V
- - 250 Vos = 80V, Vas = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage -- -- 100 nA Ves = 20V
Gate-to-Source Reverse Leakage -- -- -100 Ves = -20V
Ream) Internal Gate Resistance - 3.5 5.0 Q
Dynamic © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 8.8 - - S VDS = 25V, ID = 8.9A
Qg Total Gate Charge - 8.3 13 Vos = 50V
0951 Pre-Vth Gate-to-Source Charge - 1.9 - Vss = 10V
0952 Post-Vth Gate-to-Source Charge - 0.77 - lo = 8.9A
di Gate-to-Drain Charge - 3.2 - nC See Fig. 6 and 17
ngdr Gate Charge Overdrive - 2.4 -
st Switch Charge (0952 + di) - 4.0 -
tam) Turn-On Delay Time - 3.8 - VDD = 50V
t, Rise Time - 6.4 - ID = 8.9A
td(off) Turn-Off Delay Time -- 7.1 -- ns Re = 6.89
t, Fall Time - 3.6 - Vss = 10V ©
Ciss Input Capacitance - 515 - Ves = 0V
Coss Output Capacitance - 112 - l/ns = 25V
Crss Reverse Transfer Capacitance - 3O - pF f = 1.0MHz
Coss Output Capacitance - 533 - Ves = 0V, Vos = 1.0V, f = 1.0MHz
Cass Output Capacitance - 67 - Ves = 0V, Vos = 80V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 115 - Vss = 0V, Vos = 0V to 80V s
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© -- 37 mJ
IAR Avalanche Current CD -- 8.9 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 14.4 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 58 integral reverse a
(Body Diode) CD p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, Is = 8.9A, VGS = 0V ©
tr, Reverse Recovery Time - 33 - ns TJ = 25°C, IF = 8.9A, VDD = 25V
Qrr Reverse Recovery Charge - 38 - nC di/dt = 100A/ps ©
Notes: © Used double sided cooling , mounting pad.
C) Repetitive .ratin.g; pulse width limited by C) Mounted on minimum footprint full size board with
© 2ilxt)rTc,tiy2r1l",'1'1lt)lrli'i4mH R = 259 I = 8 9A metalized back and with small clip heatsink.
J ' . , G , AS . . Tc measured with thermal couple mounted to top
© Surface mounted on 1 in. square Cu board. (Drain) of part.
© Pulse width S 400ps; duty cycle S 2%. © Ro is measured at To of approximately 90°C.
S Coss eff. is a fixed capacitance that gives the same & Based on testing done using a typical device & evaluation board
charging time as Coss while Vros is rising from 0 to 80% V935. at Vbus=t45V, fsw=400KHz, and TA=25°C. The delta case
temperature ATC is 55°C.
2
