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IRF7663TRPBF
-20V Single P-Channel HEXFET Power MOSFET in a Micro 8 package
PD-95634
IRF7663PbF
International
TOR Rectifier
HEXFET® Power MOSFET
o Trench Technology
. Ultra Low On-Resistance srrm-1 In, D
o P-Channel MOSFET SD12 _ 7 D VDSS = -20V
. Very Small SOIC Package 3 tf 6333
. Low Profile (<1.1mm) s CE 333 D
. Available in Tape & Reel G DI‘ 5:3: D RDS(on) = 00209
. Lead-Free
Top View
Description
New trench HEXFETO power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the designer
with an extremely efficientand reliable device for use in awide
variety ofapplications.
The new Micr08TM package has half the footprint area of the
standard SO-8. This makes the Micr08 an ideal package for
applications where printed circuitboard space is ata premium.
The low profile (<1 .1 mm) of the Micr08 will allow itto fit easily MICRO8TM
into extremelythin application environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter Max. Units
l/rss Drain- Source Voltage -20 V
ID @ TA = 25°C Continuous Drain Current, Vas @ -4.5V -8.2
ID @ TA-- 70°C Continuous Drain Current, l/ss @ -4.5V -6.6 A
IDM Pulsed Drain Current OD -66
PD @TA = 25°C Power Dissipation 1.8 W
PD @TA = 70°C PowerDissipation 1.15
Linear Derating Factor 10 mW/°C
EAS Single Pulse Avalanche Energy© 115 mJ
VGS Gate-to-Source Voltage 1 12 V
To, TSTG Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Max. Units
RQJA MaximumJunction-to-Ambient® 7O °CNV
1
IRF7663PbF International
TOR Rectifier
Electrical Characteristics © T,, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 - - V Vas = 0V, ID = -250uA
AV(BR)DSS/ATJ Breakdown VoltageTemp. Coefficient - -0.01 - V/°C Reference to 25°C, ID = -1mA
Roam) Static Drain-to-Source On-Resistance - _ 0.020 Q Vas = M.51/, ID = -7.0A ©
- - 0.040 Vas = -2.5V, ID = -5.1A ©
VGS(1h) GateThresholdVoltage .0.60 - -1.2 V Vos = Vas, ID = -250pA
gfs Forward Transconductance 14.5 --- --.- S VDS = -10V, ID = -7.0A
loss Drain-to-Source Leakage Current - - -1.0 pA l/ns = -16V, Vss = 0V 0
- - -25 V95 = -16V, Vas = 0V, Tu = 70 C
less Gate-to-Source Forward Leakage - - -100 n A Vas = -12V
Gate-to-Source Reverse Leakage - - 100 Vas = 12V
Qg Total Gate Charge - 30 45 ID = -6.0A
Qgs Gate-to-Source Charge - 5.0 7.5 no Vos = -10V
di Gate-to-Drain ("Miller") Charge - 7.0 10.5 Vas = -5.0V ©
tam) Turn-On Delay Time --.- 11 --.- VDD = -10V
tr RiseTime --- 100 --- ns ID = -6.0A
td(off) Turn-Off Delay Time - 125 - Re = 6.29.
tf FaIITime - 172 - RD = 1.649 ©
Ciss InputCapacitance - 2520 - Vas = 0V
Coss OutputCapacitance - 615 - pF VDS = -10V
Crss Reverse TransferCapacitance - 375 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - -1.8 showing the
ISM Pulsed Source Current A integral reverse G
(Body Diode) OD - - -66 p-n junction diode. s
Vso Diode Forward Voltage - - -1.2 V TJ = 25°C, Is = -7.0A, l/ss = 0V ©
tn Reverse Recovery Time -.-.- 70 105 ns Tu = 25°C, IF = -2.5A
a,, Reverse RecoveryCharge __- 50 75 nC di/dt = 100A/ps ©
Notes:
C) Repetitive rating; pulse width limited by © When mounted on 1 inch square copper board, t<10 sec
max. junction temperature.
© Starting To = 25°C, L =17.8mH
C) Pulse width s: 300ps; duty cycle S 2%. Re. = 25Q, bus = -3.6A. (See Figure10)
2
