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IRF7663-IRF7663TR
-20V Single P-Channel HEXFET Power MOSFET in a Micro 8 package
PD-91866B
International
TOR Rectifier IRF7663
HEXFET© Power MOSFET
o Trench Technology
. Ultra Low On-Resistance s m1 In, D
o P-Channel MOSFET s E2 H 7 D V033 = -20V
. Very Small SOIC Package 3 tf 5E
. Low Profile (<1.1mm) s GI _LL] D
. Available in Tape & Reel G mr‘ 533D RDSW) = 00209
Top View
Description
New trench HEXFET© power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a wide
variety of applications. t'c2-iii,
The new Micr08TM package has half the footprint area ofthe J
standard SO-8. This makes the Micr08 an ideal package for
applicationswhere printed circuit board space is at a premium.
The low proWs(<1.1mm)ofthe Micr08 will allow it to fit easily MICR08TM
into extremelythin application environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain- Source Voltage -20 V
ID @ TA = 25°C Continuous Drain Current, VGS @ -4.51/ -8.2
ID @ TA-- 70°C Continuous Drain Current, VGS @ -4.5V -6.6 A
IDM Pulsed Drain Current CO -66
Pro @TA = 25°C Power Dissipation 1.8 W
Pro ar, = 70°C Power Dissipation 1.15
LinearDerating Factor 10 mW/°C
EAS Single Pulse Avalanche Energy© 115 mJ
Vss Gate-to-Source Voltage d: 12 V
To, TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Parameter Max. Units
ReJA Maximum Junction-to-Ambient@ 70 °C/W
1
5/25/00
IRF7663
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source BreakdowrNoltage -20 - - V Vss = 0V, ID = -250uA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefhcient - AJ.01 - V/°C Reference to 25°C, ID = -1mA
RDSM Static Drain-to-Source On-Resistance - - 0020 Q VGS = -4.5V, ID = -7.OA ©
- - 0.040 VGS = -2.5V, ID = -5.1A ©
Vegan) Gate Threshold Voltage -0.60 - -1.2 V Vos = VGs, ID = -250pA
gts Forward Transconductance 14.5 - - S Vros = -10V, ID = -7.0A
loss Drain-to-Source Leakage Current - - -1.0 pA Vros . -16V, l/ss . 0V - o
- - -25 Vos - -16V, I/cs - 0V, To - 70 C
less Gate-to-Source Forward Leakage - - -100 n A VGs = -12V
Gate-to-Source Reverse Leakage - - 100 Veg = 12V
% Total Gate Charge - 30 45 ID = -6.0A
Qgs Gate-to-Source)! - 5.0 7.5 nC Vos = -10V
di Gate-to-Drain/Mille/args - 7.0 10.5 Ves = -5.0V ©
thon) Turn-On Delay Time - 11 - Vroro = -10V
tr Rise Time - 100 - ns ID = -6.0A
tam) Turn-Off Delay Time - 125 - Rs = 6.29
tr Fall Time - 172 - RD = 1.649 ©
Ciss InputCapacitance - 2520 - Ves = 0V
Coss OutputCapacitance - 615 - pF Vos = -10V
Crss Reverse Transfer Capacitance - 375 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - -1.8 showing the
ISM Pulsed Source Current A integral reverse G
(Body Diode) C) - - -66 p-n junction diode. s
VSD Diode Forward Voltage - - -1.2 V To = 25''C, Is = -7.0A, VGS = 0V ©
tn Reverse Recovery Time - 70 105 ns To = 25°C, IF = -2.5A
Qn Reverse RecoveryCharge - 50 75 nC di/dt = 100A/ps ©
Notes:
© Repetitive rating; pulse width limited by
max. junction temperature.
© When mounted on 1 inch square copper board, t<10 sec
© Starting To-- 25°C, L =17.8mH
© Pulse width 3 300ps; duty cycle S 2%.
Re: 259, IAS = -3.6A. (See Figure 10)
