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IRF7607-IRF7607TR
20V Single N-Channel HEXFET Power MOSFET in a Micro 8 package
PD - 93845A
IRF7607
HEXFET®PowerMOSFET
International
TOR Rectifier
o Trench Technology
q Ultra Low On-Resistance s m1 ' a 33 D
o N-Channel MOSFET 2 7 VDSS = 20V
q Very Small SOIC Package s D13 E E D
oLowProfile(<1.1mm) 3m: SID
. Available in Tape & Reel G 'nc-' 5:3: D Rrosom = (10309
Top View
Description
Newtrench HEXFET® power MOSFETs from International
Rectifer utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design that HEXFET
power MOSFETs are well known for, provides the designer
with an extremely emcient and reliable device for use in awide
variety of applications.
The new Micr08TM package has half the footprint area of the
standard SO-8. This makes the Micr08 an ideal package for
applicationswhere printed circuit board space is at a premium.
The low profile (<1 .1mm) ofthe Micr08 will allow it to fiteasily MicroBTM
into extremelythin application environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter Max. Units
VDs Drain- Source Voltage 20 V
ID @ TA = 25°C Continuous Drain Current, Ves @ 4.5V 6.5
ID @ TA-- 70°C Continuous Drain Current, VGs @ 4.5V 5.2 A
G, Pulsed Drain Current (D 50
Pro ar, = 25°C Power Dissipation 1.8 W
PD @TA = 70°C Power Dissipation 1.2
Linear Derating Factor 0.014 W/°C
VGS Gate-to-Source Voltage l 12 V
To, TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Parameter Max. Units
ReJA Maximum Junction-to-Ambient® 70 °C/W
1
02/26/01
IRF7607 International
TOR Rectifier
Electrical Characteristics @ T J = 25''C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 - - V VGs = 0V, ID = 250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coemcient - 0.016 - VI°C Reference to 25°C, ID = 1mA
Rrosom Static Drain-to-Source On-Resistance - - 0.030 Q VGS = 4.5V, ID = 6.5A ©
- - 0.045 VGS = 2.5V, ID = 5.2A ©
VGS(th) Gate Threshold Voltage 0.60 - 1.2 V Vos = VGs, ID = 250PA
gfs Forward Transconductance 13 - - S VDs = 10V, ID = 6.5A
loss Drain-to-Source Leakage Current - - 1.0 p A Vros = 16V, VGS = 0V CF
- - 25 Vos = 16V, VGS = 0V, To = 70 C
less Gate-to-Source Forward Leakage - - -100 n A VGS = -12V
Gate-to-Source Reverse Leakage - - 100 VGs = 12V
Qg Total Gate Charge - 15 22 ID = 6.5A
Qgs Gate-to-Source Charge - 2.2 3.3 nC Vos = 10V
di Gate-to-Drain ("Miller") Charge - 3.5 5.3 N/ss = 5.0V ©
tam) Turn-On Delay Time - 8.5 - VDD = 10V
tr Rise Time - 11 - ns ID = 1.0A
tam) Turn-Off Delay Time - 36 - Rs = 6.on
tr Fall Time - 16 - RD = lon ©
Ciss Input Capacitance - 1310 - VGs = 0V
Coss Output Capacitance - 150 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 36 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 1.8 A showing the
ISM Pulsed Source Current - - 50 integral reverse G
(Body Diode) co p-n junction diode. s
VSD Diode Forward Voltage - - 1.2 v To = 25°C, Is = 1.7A, VGS = ov ©
trr Reverse Recovery Time - 19 29 ns To = 25°C, IF = 1.7A
Qrr Reverse Recovery Charge - 13 20 nC di/dt = 100A/ps ©
Notes:
(D Repetitive rating; pulse width limited by © Surface mounted on FR-4 board, t S Ssec.
max. junction temperature. (See fig. 11)
© Pulse width I 400ps; duty cycle s: 2%.
2
