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IRF7606-IRF7606TR
-30V Single P-Channel HEXFET Power MOSFET in a Micro 8 package
PD - 91264E
International
Tart, Rectifier IRF7606
HEXFET® Power MOSFET
Generation V Technology
Ultra Low On-Resistance
P-Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Fast Switching
VDSS = -30V
RDS(on) = 0.099
Top View
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The new Micr08 package, with half the footprint area Micr08
of the standard SO-8, provides the smallest footprint
available in an SOIC outline. This makes the Micr08
an ideal device for applications where printed circuit
board space is at a premium. The low profile (<1 .1mm)
of the Micr08 will allow it to ht easily into extremely thin
application environments such as portable electronics
and PCMCIA cards.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-Source Voltage -30 V
ID @ TA = 25''C Continuous Drain Current, l/ss @ -10V -3.6
ID @ TA = 70°C Continuous Drain Current, VGS @ -10V -2.9 A
IDM Pulsed Drain Currenk0 -29
Po @TA = 25°C Maximum Power Dissipation@ 1.8 W
Pro @TA = 70°C Maximum Power Dissipation © 1.1 W
Linear Derating Factor 14 mW/°C
VGs Gate-to-Source Voltage i 20 V
VGSM Gate-to-Source Voltage Single Pulse tp<10pS 30 V
dv/dt Peak Diode Recovery dv/dt © -5.0 V/ns
T J , TSTG Junction and Storage Temperature Range -55 to + 150 °C
Soldering Temperature, for 10 seconds 240 (1.6mm from case)
Thermal Resistance
Parameter Max. Units
ReJA Maximum Junction-to-Ambient © 70 °CNV
All Micr08 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
1
07/22/02
IRF7606
International
IEER Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -30 - - V VGs = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - -0.024 - V/°C Reference to 25°C, ID = -1mA
Roam) Static Drain-to-Source On-Resistance - 0.075 0.09 VGS = - 10V, ID = -2.4A ©
- 0.130 0.15 VGS = -4.5v, ID = -1.2A ©
VGS(th) Gate Threshold Voltage -1.0 - - V Vos = I/ss, ID = -250pA
gfs Forward Transconductance 2.3 - - S VDs = -10V, ID = -1.2A
bss Drain-to-Source Leakage Current - - -1.0 p A l/cos C -24V, N/ss C 0V - o
- - -25 Vros - -24V, VGs - 0V, TJ - 125 C
less Gate-to-Source Forward Leakage - - -100 n A VGs = -20V
Gate-to-Source Reverse Leakage - - 100 VGs = 20V
% Total Gate Charge - 20 30 ID = -2.4A
Qgs Gate-to-Source Charge - 2.1 3.1 nC Vos = -24V
di Gate-to-Drain ("Miller") Charge - 7.6 11 N/ss = -10V, See Fig. 9 ©
tum) Turn-On Delay Time - 13 - VDD = -10V
t, Rise Time - 20 - ns ID = -2.4A
tdmff) Turn-Off Delay Time - 43 - RG = 6.09
tt Fall Time - 39 - RD = 4.09 ©
Ciss Input Capacitance - 520 - VGS = 0V
Coss Output Capacitance - 300 - pF Vos = -25V
Crss Reverse Transfer Capacitance - 140 - f = 1.0MHz, See Fig. 8
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - -1.8 showing the
ISM Pulsed Source Current A integral reverse G
(Body Diode) OD - - -29 p-n junction diode. s
Va, Diode Forward Voltage - - -1.2 V TJ = 25°C, Is = -2.4A, VGS = 0V 6)
trr Reverse Recovery Time - 43 64 ns T: = 25°C, IF = -2.4A
Qrr Reverse Recovery Charge - 50 76 nC di/dt = -100Alps ©
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 10 )
© ISD s -2.4A, di/dt s -130A/ps, vDD s: V(BR)DSS,
TJg150°c
© Pulse width S 300ps; duty cycle S 2%.
© Surface mounted on FR-4 board, ts
10sec.
