IRF7604TRPBF ,-20V Single P-Channel HEXFET Power MOSFET in a Micro 8 packageapplications where printed circuit board space is at a
premium. The low profile (<1 .1 mm) of the ..
IRF7604TRPBF ,-20V Single P-Channel HEXFET Power MOSFET in a Micro 8 packageInternational
TOR Rectifier“MM”, HEXFETO Power MOSFET
Generation V Technology
Ultra Low On-Res ..
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IRF7606 ,-30V Single P-Channel HEXFET Power MOSFET in a Micro 8 package Generation V TechnologyA1 8 Ultra Low On-ResistanceS D P-Ch ..
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ISL4221EIR ,QFN Packaged/ +/-15kV ESD Protected/ +2.7V to +5.5V/ 150Nanoamp/ 250kBps/ RS-232 Transmitters/ReceiversFeatures+2.7V to +5.5V, 150Nanoamp, 250kBps, • Available in Near Chip Scale QFN (5mmx5mm) Package R ..
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ISL4223EIR ,QFN Packaged/ +/-15kV ESD Protected/ +2.7V to +5.5V/ 150Nanoamp/ 250kBps/ RS-232 Transmitters/Receiversfeatures an automatic powerdown function Related Literaturethat powers down the on-chip power-suppl ..
ISL4223EIR ,QFN Packaged/ +/-15kV ESD Protected/ +2.7V to +5.5V/ 150Nanoamp/ 250kBps/ RS-232 Transmitters/ReceiversFeaturesoperational, and even lower standby, power consumption is critical. Efficient on-chip charg ..
ISL4238EIRZ , QFN Packaged, ±15kV ESD Protected, 2.7V to 5.5V, 10Nanoamp, 250kbps/1Mbps, RS-232 Transceivers with Enhanced Automatic Power-down
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IRF7604TRPBF
-20V Single P-Channel HEXFET Power MOSFET in a Micro 8 package
PD - 95695
International
Tart, Rectifier IRF7604PbF
HEXFET® Power MOSFET
. Generation V Technology
q Ultra Low On-Resistance
o P-Channel MOSFET
0 Very Small SOIC Package
0 Low Profile (<1.1mm)
VDSS = -20V
Available in Tape & Reel
Fast Switching
Lead-Free Top View
Description
RDS(0n) = 0.099
Fifth Generation HEXFETS from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance persilicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, providesthe designerwith an extremely efficient
and reliable device for use in a widevariety of applications.
The new Micr08 package, with halfthe footprintarea ofthe
standard SO-8, provides the smallest footprint available in
an SOIC outline. This makesthe Micr08 an ideal device for
applications where printed circuit board space is at a
premium. The kowprofile(<1.1mm) ofthe Micr08 will allow
it to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter Max. Units
ID C) TA = 25''C Continuous Drain Current, Vss C) -4.5V -3.6
ID tt TA = 70°C Continuous Drain Current, Vos tt -4.5V -2.9 A
IDM Pulsed Drain Current Ci) -19
PD (PTA = 25''C Power Dissipation 1.8 W
Linear Derating Factor 14 mW/''C
Vas Gate-to-Source Voltage i 12 V
dv/dt Peak Diode Recovery dv/dt © -5.0 V/ns
TJ'TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Parameter Typ. Max. Units
ReJA Maximum Junction-to-Ambient - 70 "C/W
All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
9/1/04
IRF7604PbF International
TOR Rectifier
Electrical Characteristics Iii) To = 25''C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Vesvss Drain-to-Source Breakdown Voltage -20 - - V Veg = OV, ID = -250PA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coercient - -0.022 - vrc Reference to 25''C, ID =-1mA
. . . - - 0.090 Veg = -4.5V. ID = -2.4A Q
RDSOM Static Drain-to-Source (M-Resistance - - (h13 Q Ves = C.7V, b = -1.2A ©
Vegan) Gate Threshold Voltage -0.70 - - V Vos = l/ss, b = -250PA
git Forward Transconductance 2.6 - - S Vos = -10V, b = -1.2A
loss Drain-to-Source Leakage Current - - -1.0 PA Vos = -16V, Vos = 0V
- - -25 Vos = -16V, l/ss = OV, T., = 125''C
less Gate-ttFSource Forward Leakage - - -100 n A Veg = -12V
Gate-to-Source Reverse Leakage - - 100 Vss = 12V
Qg Total Gate Charge - 13 20 b = -2.4A
Qgs Gate-to-Source Charge - 2.6 3.9 nC l Vos = -16V
tho Gate-tty-Ora' ("Miller") Charge - 5.6 9.0 Vss = -4.W, See Fig. 6 and 9 Q
tam“) Turn-On Delay Time - 17 - Voo = -10V
tr RiseTIme - 53 - l ID = -2.4A
1m, Turn-Off Delay Time - 31 - ns l Rs = 6.on
tf FaIITIme - 38 - Ro = 4.09, See Fig. 10 3)
CISS Input Capacitance - 590 - l/ss = 0V
C055 Output Capacitance - 330 - pF l Vos = -15V
Crss Reverse Transfer Capacitance - 170 - l f--1.0MHz,See Fig.5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - -1 8 MOSFETsymboI 0
(Body Diode) . A showing the
ISM Pulsed Source Current - - -1 9 integral reverse 0
(Body Diode) G) pm junction diode. S
l/sc Diode Forward Voltage - - -1.2 V Tu = 25''C, ls = -2.4A. Veg = 0V 6)
trr Reverse Recovery Time - 41 62 ns Tu = 25°C, I; =-2.4A
er Reverse Recovery Charge - 38 57 nC di/dt = 100A/ps co
Notes:
C Repetitive rating: pulse width limited by (3) Pulse width I 300ps: duty cycle I 2%.
max.junction temperature. ( See M. 11 )
2 Iss s CAA, di/dt c-96A/ps, VDDS Wsvss, C) Surface mounted on FR-4 board, ts 10sec.
T J5 150°C
2
