IRF7604TR ,-20V Single P-Channel HEXFET Power MOSFET in a Micro 8 packagePD - 9.1263EIRF7604®HEXFET Power MOSFETl Generation V TechnologyA1 8l Ultra Low On-ResistanceDSl P- ..
IRF7604TRPBF ,-20V Single P-Channel HEXFET Power MOSFET in a Micro 8 packageapplications where printed circuit board space is at a
premium. The low profile (<1 .1 mm) of the ..
IRF7604TRPBF ,-20V Single P-Channel HEXFET Power MOSFET in a Micro 8 packageInternational
TOR Rectifier“MM”, HEXFETO Power MOSFET
Generation V Technology
Ultra Low On-Res ..
IRF7606 ,-30V Single P-Channel HEXFET Power MOSFET in a Micro 8 packageapplications.The new Micro8 package, with half the footprint areaMicro8of the standard SO-8, provid ..
IRF7606 ,-30V Single P-Channel HEXFET Power MOSFET in a Micro 8 packageapplications where printed circuitboard space is at a premium. The low profile (<1.1mm)of the Micr ..
IRF7606 ,-30V Single P-Channel HEXFET Power MOSFET in a Micro 8 package Generation V TechnologyA1 8 Ultra Low On-ResistanceS D P-Ch ..
ISL4221EIR ,QFN Packaged/ +/-15kV ESD Protected/ +2.7V to +5.5V/ 150Nanoamp/ 250kBps/ RS-232 Transmitters/ReceiversFeatures+2.7V to +5.5V, 150Nanoamp, 250kBps, • Available in Near Chip Scale QFN (5mmx5mm) Package R ..
ISL4221EIR ,QFN Packaged/ +/-15kV ESD Protected/ +2.7V to +5.5V/ 150Nanoamp/ 250kBps/ RS-232 Transmitters/ReceiversApplicationsThe ISL4221E is a 1 driver, 1 receiver device and the • Any Space Constrained System Re ..
ISL4223EIR ,QFN Packaged/ +/-15kV ESD Protected/ +2.7V to +5.5V/ 150Nanoamp/ 250kBps/ RS-232 Transmitters/Receiversfeatures an automatic powerdown function Related Literaturethat powers down the on-chip power-suppl ..
ISL4223EIR ,QFN Packaged/ +/-15kV ESD Protected/ +2.7V to +5.5V/ 150Nanoamp/ 250kBps/ RS-232 Transmitters/ReceiversFeaturesoperational, and even lower standby, power consumption is critical. Efficient on-chip charg ..
ISL4238EIRZ , QFN Packaged, ±15kV ESD Protected, 2.7V to 5.5V, 10Nanoamp, 250kbps/1Mbps, RS-232 Transceivers with Enhanced Automatic Power-down
ISL4241EIRZ-T , QFN Packaged, ±15kV ESD Protected, 2.7V to 5.5V, 10Nanoamp, 250kbps, 2.7V to 5.5V, 10Nanoamp, 250kbps,
IRF7604-IRF7604TR
-20V Single P-Channel HEXFET Power MOSFET in a Micro 8 package
International
p,aa,likctifier
PD - 9.1263E
IRF7604
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely effcient
and reliable device for use in a wide variety of applications.
The new Micr08 package, with half the footprint area of the
standard SO-8, provides the smallest footprint available in
an SOIC outline. This makes the Micro8 an ideal device for
applications where printed circuit board space is at a
premium. The low profile (<1.1mm) ofthe Micro8 will allow
it to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards.
Absolute Maximum Ratings
HEXFET6 Power MOSFET
Generation V Technology
Ultra Low On-Resistance s 'nc-l - e D
P-Channel MOSFET S 3:2 7:13 D VDSS = -20V
Very Small SOIC Package E 311
Low Profile (<1.1mm) s :11“ In, D
Available in Tape & Reel G nr-' 5 D R = 0 099
Fast Switching CIT] DS(on) .
Top View
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -3.6
ID @ TA = 70°C Continuous Drain Current, VGS @ -4.5V -2.9 A
IDM Pulsed Drain Current C) -19
pr, @TA = 25°C Power Dissipation 1.8 W
Linear Derating Factor 14 mW/°C
VGs Gate-to-Source Voltage l 12 V
dv/dt Peak Diode Recovery dv/dt © -5.0 V/ns
To,Tsrs Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Parameter Typ. Max. Units
RQJA Maximum Junction-to-Ambient) - 70 "C/W
All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
12/9/97
IRF7604
International
TOR Rectifier
Electrical Characteristics © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 - - V VGS = 0V, ID = -250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - -0.022 - V/°C Reference to 25''C, ID = -1mA
. . . - - 0.090 l/ss = -4.5V, lo = -2.4A ©
RDS(ON) Static Drain-to-Source On-Resistance -- - OA3 n VGS = 27V, ID = -1.2A Cs)
VGS(th) Gate Threshold Voltage -0.70 - - V Vos = VGS, ID = -250pA
git Forward Transconductance 2.6 - - S Vros = -10V, ID = -1.2A
Koss Drain-to-Source Leakage Current - - -1.0 pA Vros = -16V, VGS = 0V
- - -25 V93 = -16V, VGS = 0V, To = 125°C
less Gate-to-Source Forward Leakage - - -100 n A VGS = -12V
Gate-to-Source Reverse Leakage - - 100 VGS = 12V
q, Total Gate Charge - 13 20 ID = -2AA
Qgs Gate-to-Source Charge - 2.6 3.9 nC Vos = -16V
09d Gate-to-Drain ("Miller") Charge - 5.6 9.0 VGS = -4.5V, See Fig. 6 and 9 ©
td(on) Turn-On Delay Time - 17 - VDD = -10V
t, RiseTime - 53 - ns ID = -2.4A
td(off) Turn-Off Delay Time - 31 - Rs = 6.09
tr FallTime - 38 - Ro = 4.09, See Fig. 10 ©
Ciss Input Capacitance - 590 - VGS = 0V
Coss Output Capacitance - 330 - pF VDs = -15V
Crss Reverse Transfer Capacitance - 170 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
b Continuous Source Current - - -1 8 MOSFETsymbol D
(Body Diode) . A showing the
ISM Pulsed Source Current - - -1 9 integral reverse G
(Body Diode) CO p-n junction diode. s
VSD Diode Forward Voltage - - -1.2 V T: = 25°C, Is = -2.4A, VGS = 0V ©
trr Reverse Recovery Time - 41 62 ns TJ = 25''C, IF = -2.4A
Qrr Reverse Recovery Charge - 38 57 nC di/dt = 100Alps ©
Notes:
(D Repetitive rating; pulse width limited by
max. junction temperature. ( See Fig. 11 )
© Iso s -2.4A, di/dt s: -96/Ups, Vor, s V(BRmss,
TJs 150°C
© Pulse width I 300ps; duty cycle S 2%.
© Surface mounted on FR-4 board, ts 10sec.
