IRF7603TR ,30V Single N-Channel HEXFET Power MOSFET in a Micro 8 packagePD - 9.1262DIRF7603®HEXFET Power MOSFETl Generation V TechnologyAA1 8l Ultra Low On-ResistanceS Dl ..
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ISL4221EIR ,QFN Packaged/ +/-15kV ESD Protected/ +2.7V to +5.5V/ 150Nanoamp/ 250kBps/ RS-232 Transmitters/ReceiversFeatures+2.7V to +5.5V, 150Nanoamp, 250kBps, • Available in Near Chip Scale QFN (5mmx5mm) Package R ..
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ISL4223EIR ,QFN Packaged/ +/-15kV ESD Protected/ +2.7V to +5.5V/ 150Nanoamp/ 250kBps/ RS-232 Transmitters/Receiversfeatures an automatic powerdown function Related Literaturethat powers down the on-chip power-suppl ..
ISL4223EIR ,QFN Packaged/ +/-15kV ESD Protected/ +2.7V to +5.5V/ 150Nanoamp/ 250kBps/ RS-232 Transmitters/ReceiversFeaturesoperational, and even lower standby, power consumption is critical. Efficient on-chip charg ..
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IRF7603-IRF7603TR
30V Single N-Channel HEXFET Power MOSFET in a Micro 8 package
International PD-9.1262D
TOR, Rectifier IRF7603
HEXFET® Power MOSFET
o Generation V Technology
0 Ultra Low On-Resistance S I ll 1 .8 ll ID
o N-Channel MOSFET 2 7 VDSS = 30V
o Very Small SOIC Package s rm Cat T] D
0 Low Profile (<1.1mm) s W3 '-rrr] D
o Available in Tape & Reel G W4 T] D RDS(on) = 0.035Q
o Fast Switching
. . Top View
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designerwith an extremely efficient
and reliable device for use in a wide variety of applications.
The new Micr08 package, with half the footprint area of the M icr08
standard SO-8, provides the smallest footprint available in
an SOIC outline. This makes the Micr08 an ideal device for
applications where printed circuit board space is at a
premium. The low profile (<1.1mm) ofthe Micr08 will allow
it to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 5.6
In @ TA = 70°C Continuous Drain Current, VGS @ 10V 4.5 A
IDM Pulsed Drain Current OD 30
PD @TA = 25°C Power Dissipation 1.8 W
Linear Derating Factor 14 mW/°C
VGS Gate-to-Source Voltage i 20 V
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
TJ,TSTG Junction and Storage Temperature Range -55 to + 150 "'C
Thermal Resistance
Parameter Typ. Max. Units
RQJA Maximum Junction-to-Ambient@ - 70 ''C/W
All Micr08 Data Sheets reflect improved Thermal Resistance, Power and Current -Hand|ing Ratings- effective
only for product marked with Date Code 505 or later .
8/25/97
IRF7603 International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V VGS = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefhcient - 0.029 - V/°C Reference to 25°C, ID = 1mA
RDSM) Static Drain-to-Source On-Resistance : : bei', n x2: =" e)) (i,,',-]-').:)',,',','
VGS(th) Gate Threshold Voltage 1.0 - - V VDS = VGs, b = 250pA
gfs Forward Transconductance 4.3 - - S Ws = 10V, ID = 1.9A
loss Drain-to-Source Leakage Current - - 1.0 pA Ws = 24V, VGS = 0V
- - 25 V93 = 24V, VGs = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage - - -100 n A I/ss = -20V
Gate-to-Source Reverse Leakage - - 100 l/ss = 20V
09 Total Gate Charge - 18 27 ID = 3.7A
Qgs Gate-to-Source Charge - 2.4 3.6 nC l/os = 24V
di Gate-to-Drain ("Miller") Charge - 5.6 8.4 VGs = 10V, See Fig. 6 and 9 ©
td(on) Turn-On Delay Time - 5.7 - VDD = 15V
tr Rise Time - 28 - ID = 3.7A
mom Turn-Off Delay Time - 18 - ns Rs = 6.29
tf Fall Time - 12 - RD = 4.09, See Fig. 10 ©
Ciss Input Capacitance - 520 - VGs = 0V
Cogs Output Capacitance - 200 - pF I/rss = 25V
Crss Reverse Transfer Capacitance - 80 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 1 8 MOSFET symbol D
(Body Diode) _ A showing the Hi:
.IS'V' Pulsed Source Current . - - 30 integral reverse G (tLl
(Body Diode) co p-n junction diode. s
VSD Diode Forward Voltage - - 1.2 v T J = 25°C, ls = 3.7A, l/GS = 0v ©
trr Reverse Recovery Time - 53 80 ns TJ = 25°C, IF = 3.7A
G, Reverse RecoveryCharge - 87 130 nC di/dt = 1OOA/ps ©
Notes:
C) Repetitive rating; pulse width limited by © Pulse width f 300ps; duty cycle 5 2%.
max. junction temperature. ( See fig. 11 )
C) ISD s 3.7A, di/dt S 130A/ps, VDD f V(BRmss. GD Surface mounted on FR-4 board, ts 10sec.
Tu S 150°C
