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IRF7555-IRF7555TR
-20V Dual P-Channel HEXFET Power MOSFET in a Micro 8 package
International
TOR Rectifier
o Trench Technology
o Ultra Low On-Resistance
. Dual P-Channel MOSFET
. Very Small SOIC Package
. Low Profile (<1.1mm)
. Available in Tape & Reel
Description
New trench HEXFET© power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device designthat HEXFET
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a wide
variety of applications.
The new Micr08TM package has halfthe footprint area of the
standard SO-8. This makes the Micr08 an ideal package for
applications where printed circuit board space is at a premium.
PD-91865B
IRF7555
HEXFET© Power MOSFET
8 :njm -
7-IrIn D1 VDSS - -20V
8:13: D2
5-IIED2 RDS(on) = 0.0559
Top View
The low prorile(<1.1mm)ofthe Micr08 will allow it to ft easily MicroBTM
into extremelythin application environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter Max. Units
VDs Drain-Source Voltage -20 V
In @ TA = 25°C Continuous Drain Current, VGs @ -4.5V -4.3
ID @ TA = 70°C Continuous Drain Current, VGS @ -4.5V -3.4 A
IDM Pulsed Drain CurrentCD -34
Pro @TA = 25°C Maximum Power Dissipation 1.25 W
PD @TA = 70°C Maximum Power Dissipation© 0.8 W
Linear Derating Factor 10 mW/°C
VGs Gate-to-Source Voltage f: 12 V
EAS Single Pulse Avalanche Energy) 36 m]
dv/dt Peak Diode Recovery dv/dt © 1.1 V/ns
T J , Tsms Junction and Storage Temperature Range -55 to + 150 ''C
Soldering Temperature, for 10 seconds 240 (1.6mm from case)
Thermal Resistance
Parameter Max. Units
RQJA Maximum Junction-to-Ambient © 100 °CNV
1
2/2/00
IRF7555 International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 - - V VGS = 0V, ID = -250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coemcient - -0.005 - W'C Reference to 25°C, ID = -1mA
Rosm Static Drain-to-Source On-Resistance - - 0.055 Q VGS = -4.5V, ID = -4.3A ©
- - 0.105 VGs = -2.5V, ID = -3.4A co
VGS(th) Gate Threshold Voltage -0.60 - -1.2 V Vos = VGS, ID = -250pA
9fs Forward Transconductance 2.5 - - S Vos = -10V, ID = -0.8A
. - - -1.0 Vros = -16V, VGS = OV
I Drain-to-Source Leaka e Current
DSS g - - -25 pA Vros = -16V, Vss = OV, T: = 125°C
l Gate-to-Source Forward Leakage - - -100 n A VGS = -12V
GSS Gate-to-Source Reverse Leakage - - 100 VGs = 12V
Qg Total Gate Charge - 10 15 ID = -3.0A
Q95 Gate-to-Source Charge - 2.1 3.1 nC VDS = -10V
di Gate-to-Drain ("Miller") Charge - 2.5 3.7 Was = -5.0V
tum") Turn-On Delay Time - 10 - VDD = -10V
t, Rise Time - 46 - ns ID = -2.0A
tam) Turn-Off Delay Time - 60 - Rs = 6.09
If Fall Time - 64 - RD = 5.09 ©
Ciss Input Capacitance - 1066 - VGs = 0V
COSS Output Capacitance - 402 - pF VDS = -10V
Crss Reverse Transfer Capacitance - 126 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current 1 3 MOSFET symbol D
(Body Diode) - - - . showing the
ISM Pulsed Source Current 34 integral reverse a
(Body Diode) co - - - p-n junction diode. s
l/so Diode Forward Voltage - - -1.2 V To = 25°C, Is = -1.6A, VGS = 0V ©
trr Reverse Recovery Time - 54 82 ns To = 25°C, I; = -2.5A
G, Reverse Recovery Charge - 41 61 nC di/dt = -100A/ps ©
Notes:
OD Repetitive rating; pulse width limited by 69 Surface mounted on FR-4 board, ts: 10sec.
max. junction temperature.
© ISD s -2.0A, di/dt s -140A/ps, l/DD s V(BR)DSS, s gtaf'ggng' 2:52,le 8.0mH
T J 3 150°C G , AS . .
© Pulse width s: 300ps; duty cycle 5 2%.
2
