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IRF7534D1-IRF7534D1TR
-20V FETKY
PD -93864
International
TOR, Rectifier IRF7534D1
FETKY MOSFET & Schottky Diode
o Co-packaged HEXFET® power
MOSFET and Schottk diode A DI‘ a (err;
q Ultra Low tln/l/if,',',),':,,':'," A E; L733 K VDSS - -20V
MOSFET 3 (i
o Trench technology s EHQKEE D RDS(on) = 0-0559
o Micro8TM Footprint G 51‘ 53330
q Available in Tape & Reel . Schottky Vf=0.39V
Description Top View
The FETKY family of co-packaged MOSFETs and Schottky diodes offers the designer
an innovative, board space saving solution for switching regulator and power
management applications. International Rectifier utilizes advanced processing
techniques to achieve extremely low on-resistance per silicon area. Combining this
technology with International RectiMr's low forward drop Schottky rectifers results in
an extremely efficient device suitable for use in a wide variety of portable electronics
applications, such as cell phones, PDAs, etc.
The Micro8TM package makes an ideal device for applications where printed circuit Micro8
board space is at a premium. The low profile (<1.1mm) of the Micro8TM will allow it to
fit easily into extremely thin application environments such as portable electronics
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-Source Voltage -20 V
lo @ TA = 25°C Continuous Drain Current, VGs @ -4.5V -4.3
lo @ TA = 70°C Continuous Drain Current, VGs @ -4.5V -3.4 A
IDM Pulsed Drain Current00 -34
PD @TA = 25°C Maximum Power Dissipation@ 1.25 W
Po @TA = 70°C Maximum Power Dissipation 0.8 W
Linear Derating Factor 10 mW/t
VGs Gate-to-Source Voltage i 12 V
dv/dt Peak Diode Recovery dv/dt © 1.1 V/ns
T J , TSTG Junction and Storage Temperature Range -55 to + 150 "C
Thermal Resistance
Parameter Max. Units
RGJA Maximum Junction-to-Ambient © 100 ''C/W
Notes:
C) Repetitive rating - pulse width limited by max. junction temperature (see Fig. 9)
© Iso S -1.2A, di/dt f 100/Ups, Voc, f V(BR)oss, To S 150°C
© Pulse width S 300ps - duty cycle f 2%
© When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance
www. irf.com 1
3/22/00
IRF7534D1
International
TOR Rectifier
MOSFET Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 - - V VGs = 0V, ID = -250pA
Rroson) Static Drain-to-Source On-Resistance - - 0.055 n VGS = -4.5V, ID = -4.3A ©
- - 0.105 VGS = -2.5V, ID = -3.4A ©
VGS(th) Gate Threshold Voltage -0.6 - -1.2 V VDs = vss, ID = -250pA
git Forward Transconductance 2.5 - - S VDs = -10V, ID = -0.8A
loss Drain-to-Source Leakage Current _- :_12: pA V3: , .1: "tis, , c, T J = 125°C
less Gate-to-Source Forward Leakage - - -100 nA l/ss = -12V
Gate-to-Source Reverse Leakage - - 100 VGS = 12V
Qg Total Gate Charge - 10 15 ID = -3A
Q95 Gate-to-Source Charge - 2.1 3.1 nC VDs = -10V
di Gate-to-Drain ("Miller") Charge -- 2.5 3.7 I/cs = -5V
tum) Turn-On Delay Time - 10 - VDD = -10V
tr Rise Time - 46 - ID = -2A
tts(oit) Turn-Off Delay Time - 60 - ns Rs = 6.09
k Fall Time - 64 - RD = 59, ©
Ciss Input Capacitance - 1066 - N/ss = 0V
Coss Output Capacitance - 402 - pF Ws = -10V
Crss Reverse Transfer Capacitance - 125 - f = 1.0MHz
MOSFET Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current(Body Diode) - - -1.3
ISM Pulsed Source Current (Body Diode) - - -34 A
Vso Body Diode Forward Voltage - - -1.2 V T: = 25°C, ls = -1.6A, VGS = 0V
trr Reverse Recovery Time (Body Diode) - 54 82 ns T J = 25°C, IF = -2.5A
Q,, Reverse Recovery Charge - 41 61 nC di/dt = 100/Ups ©
Schottky Diode Maximum Ratings
Parameter Max. Units Conditions
IHaV, Max. Average Forward Current 1.9 A 50% Duty Cycle. Rectangular Wave, TA = 25°C
1.4 See Fig.13 TA = 70°C
ISM Max. peak one cycle Non-repetitive 120 5ps sine or 3ps Red. pulse Following any rated
Surge current 11 A 10ms sine or 6ms Rect. pulse load condition &
with VRRM applied
Schottky Diode Electrical Specifications
Parameter Max. Units Conditions
VFM Max. Forward voltage drop 0.50 IF = 1.0A, T, = 25°C
0.62 V I; = 2.0A, T, = 25°C
0.39 IF = 1.0A, T: = 125°C
0.57 IF = 2.0A, T: = 125°C .
IRM Max. Reverse Leakage current 0.02 m A VR = 20V T: = 25°C
8 TJ = 125°C
Ct Max. Junction Capacitance 92 pF VR = 5Vdc( 100kHz to 1 MHz) 25°C
dv/dt Max. Voltage Rate of Charge 3600 V/ us Rated VR
(HEXFET is the reg. TM for International Rectirer Power MOSFET‘s)
