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IRF7530-IRF7530TR
20V Dual N-Channel HEXFET Power MOSFET in a Micro 8 package
PD-93760C
International
Tall Rectifier IRF7530
HEXFET© Power MOSFET
. Trench Technology
. Ultra Low On-Resistance SI rnrr1- BBB D1
. Dual N-Channel MOSFET G1 2 gig] D1 VDSS = 20V
. Very Small SOIC Package 3 6
. Low Profile (<1.1mm) S2 LIE"- (if [DE D2
. Available in Tape & Reel G2 4 5:13: D2 RDSM) = 0.030Q
Top View
Description
New trench HEXFET© power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a wide
variety of applications.
The new Micro8TM package has half the footprint area of the
standard SO-8. This makes the Micro8 an ideal device for
applications where printed circuit board space is at a premium.
The low proGs(<1.1mm)ofthe Micro8 will allowitto fiteasily Microsw
into extremelythin application environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter Max. Units
Vros Drain- Source Voltage 20 V
ID @ TA = 25''C Continuous Drain Current, VGS @ 4.5V 5.4
ID @ TA-- 70°C Continuous Drain Current, VGS @ 4.5V 4.3 A
IDM Pulsed Drain Current (D 40
Po @TA = 25°C Power Dissipation 1.3 W
Pro @TA = 70°C Power Dissipation 0.80
Linear Derating Factor 10 mW/°C
EAs Single Pulse Avalanche Energy© 33 mJ
VGS Gate-to-Source Voltage l 12 V
To, TSTG Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Max. Units
ReJA Maximum Junction-to-Ambient® 100 'C/W
1
4/12/04
IRF7530 International
TOR Rectifier
Electrical Characteristics til T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 - - V VGS = 0V, ID = 250uA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.01 - V/°C Reference to 25°C, ID = 1mA
Rosen Static Drain-to-Source On-Resistance - - 0.030 g VGS = 4.5V, ID = 5.4A ©
- - 0.045 VGS = 2.5V, ID = 4.6A ©
VGS(th) Gate Threshold Voltage 0.60 - 1.2 V Vos = VGs, ID = 250PA
gfs Forward Transconductance 13 - - S Vros = 10V, ID = 5.4A
loss Drain-to-Source Leakage Current - - 1.0 pA Vros = 16V, VGS = 0V Ct
- - 25 Vos = 16V, VGS = 0V, To = 70 C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 12V
Gate-to-Source Reverse Leakage - - -100 I/cs = -12V
Qg Total Gate Charge - 18 26 ID = 5.4A
Qgs Gate-to-Source Charge - 3.4 5.1 nC Vos = 16V
di Gate-to-Drain ("Miller") Charge - 3.4 5.1 VGs = 4.5V ©
tdmn) Turn-On Delay Time - 8.5 - Vroro = 10V
tr Rise Time - 11 - ns ID = 1.0A
td(off) Turn-Off Delay Time - 36 - Rs = 6.09
tr Fall Time - 16 - RD = lon C)
Ciss Input Capacitance - 1310 - VGS = 0V
Coss Output Capacitance - 180 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 150 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 1.3 showing the
ISM Pulsed Source Current A integral reverse G
(Body Diode) OD - - 40 p-n junction diode. s
VSD Diode Forward Voltage - - 1.2 V To = 25°C, Is = 1.3A, VGS = 0V ©
tn Reverse Recovery Time - 19 29 ns To = 25°C, IF = 1.3A
G, Reverse RecoveryCharge - 13 20 nC di/dt = 100A/us ©
Notes:
C) Repetitive rating; pulse width limited by 6) When mounted on 1 inch square copper board, t<10 sec
max. junction temperature.
(9 Starting Tu = 25°C, L = 2.6mH
© Pulse width I 400ps; duty cycle s: 2%. Rs = 25Q, 'As = 5.0A. (See Figure 10)
2
