IRF7526D1TR ,-30V FETKYElectrical Characteristics @ T = 25°C (unless otherwise specified)JParameter Min. Typ. Max. Units C ..
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ISL4221EIR ,QFN Packaged/ +/-15kV ESD Protected/ +2.7V to +5.5V/ 150Nanoamp/ 250kBps/ RS-232 Transmitters/ReceiversFeatures+2.7V to +5.5V, 150Nanoamp, 250kBps, • Available in Near Chip Scale QFN (5mmx5mm) Package R ..
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IRF7526D1TR
-30V FETKY
PD -91649C
International
TOR Rectifier IRF7526D1
FETKY TM MOSFET & Schottky Diode
o Co-packaged HEXFET© Power 1 n [ EEK
MOSFET and Schottky Diode A D: _ i VDSS = -30V
. P-Channel HEXFET A 512% 4333 K
0 Low VF ISchottky Rectifier s EiIiL 531:! D RDS(on) = 0.209
. Generation 5 Technology G D14 l 51]] D
o Micr08TMFootprint SchottkyVf=0.39V
Description Top View
The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the
designer an innovative board space saving solution for switching regulator
applications. Generation 5 HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. Combining this technology
with International Rectiher's low forward drop Schottky rectifers results in an tai'itrt,
extremely efficient device suitable for use in a wide variety of portable electronics '1iifr'iiit'i1
applications like cell phone, PDA, etc.
The new MicrosTM package, with half the footprint area of the standard SO-8, provides
the smallest footprint available in an SOIC outline. This makes the Micr08TM an ideal Micro8"
device for applications where printed circuit board space is at a premium. The low
profile(<1.1mm) ofthe Micr08TM will allow itto fit easily into extremelythin application
environments such as portable electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter Maximum Units
'0 @ TA = 25°C . . -2.0
ID @ TA = 70°C Continuous Drain Current, VGS @ -4.51/ -1.6 A
IDM Pulsed Drain Current co -16
Pro @TA = 25°C . . . 1.25 W
Po @TA = 70°C Power Dissipation 0.8
Linear Derating Factor 10 mW/''C
VGS Gate-to-Source Voltage f: 20 V
dv/dt Peak Diode Recovery dv/dt © -5.0 V/ns
T0srs Junction and Storage Temperature Range -55 to +150 "C
Thermal Resistance Ratings
Parameter Maximum Units
mm l Junction-to-Ambient co 100 'CA/V
Notes:
C) Repetitive rating - pulse width limited by max. junction temperature (see Fig. 9)
© ISD S -1.2A, di/dt S 160/Ups, VDD S V(BR)DSS! To S 150°C
© Pulse width 3 300ps - duty cycle 5 2%
69 When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance
www.irf. com 1
5/7/99
IRF7526D1
International
TOR Rectifier
MOSFET Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -30 - - V VGs = 0V, ID = -250pA
Rrosom Static Drain-to-Source On-Resistance - 0.17 0.20 Q VGS = -10V, '0 = -1.2A ©
- 0.30 0.40 VGS = -4.5V, ID = -0.60A ©
VGS(th) Gate Threshold Voltage -1.0 - - V Vros = VGs, ID = -250pA
gfs Forward Transconductance 0.94 - - S Nhos = -10V, ID = -0.60A
loss Drain-to-Source Leakage Current - - -1.0 pA Vos = -24V, VGS = 0V
- - -25 Vos = -24V, VGs = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage - - -100 n A VGs = -20V
Gate-to-Source Reverse Leakage - - 100 N/ss = 20V
Qg Total Gate Charge - 7.5 11 ID = -1.2A
Qgs Gate-to-Source Charge - 1.3 1.9 nC Vros = -24V
di Gate-to-Drain ("Miller") Charge - 2.5 3.7 VGS = -10V, See Fig. 6 ©
Lian) Turn-On Delay Time - 9.7 - VDD = -15V
tr Rise Time - 12 - ns ID = -1.2A
tum) Turn-Off Delay Time - 19 - Rs = 6.252
tf Fall Time - 9.3 - Ro = 129, ©
Ciss Input Capacitance - 180 - N/ss = 0V
Coss Output Capacitance - 87 - pF Vos = -25V
Crss Reverse Transfer Capacitance - 42 - f = 1.0MHz, See Fig. 5
MOSFET Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current(Body Diode) - - -1.25
ISM Pulsed Source Current (Body Diode) - - -9.6 A
VSD Body Diode Forward Voltage - - -1.2 V To = 25°C, ls = -1.2A, VGS = 0V
trr Reverse Recovery Time (Body Diode) .-.- 30 45 ns To = 25°C, IF = -1.2A
Gr Reverse Recovery Charge - 37 55 nC di/dt = 100A/ps©
Schottky Diode Maximum Ratings
Parameter Max. Units Conditions
IHaV) Max. Average Forward Current 1.9 50% Duty Cycle. RectangularWave, T, = 25°C
1.3 A See Fig. 14 TA = 70°C
ISM Max. peak one cycle Non-repetitive 120 5ps sine or 3ps Rect. pulse Following any rated
Surge current 11 A 10ms sine or 6ms Rect. pulse load condition &
with VRRM applied
Schottky Diode Electrical Specifications
Parameter Max. Units Conditions
VFM Max. Forward voltage drop 0.50 IF = 1.0A, To = 25°C
0.62 V IF = 2.0A, To = 25°C
0.39 IF = 1.0A, T: = 125°C
0.57 IF = 2.0A, T: = 125°C.
IRM Max. Reverse Leakage current 0.06 m A VR = 30V To = 25°C
16 To = 125°C
Ct Max. Junction Capacitance 92 pF VR = 5Vdc ( 100kHz to 1 MHz) 25°C
dv/dt Max. Voltage Rate of Charge 3600 V/ps Rated VR
(HEXFET is the reg. TM for International Rectifier Power MOSFET's)
