IRF7524D1TR ,-20V FETKYElectrical Characteristics @ T = 25°C (unless otherwise specified)JParameter Min. Typ. Max. Units C ..
IRF7526D1TR ,-30V FETKYElectrical Characteristics @ T = 25°C (unless otherwise specified)JParameter Min. Typ. Max. Units C ..
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IRF7530 ,20V Dual N-Channel HEXFET Power MOSFET in a Micro 8 packagePD-93760CHEXFET Power MOSFET Trench Technology18S1 D1 Ultra Low On-ResistanceV = 20V ..
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IRF7530 ,20V Dual N-Channel HEXFET Power MOSFET in a Micro 8 packagePD-93760CHEXFET Power MOSFET Trench Technology18S1 D1 Ultra Low On-ResistanceV = 20V ..
ISL3873AIK-TK , Wireless LAN Integrated Medium Access Controller with Baseband Processor
ISL3873AIK-TK , Wireless LAN Integrated Medium Access Controller with Baseband Processor
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ISL4221EIR ,QFN Packaged/ +/-15kV ESD Protected/ +2.7V to +5.5V/ 150Nanoamp/ 250kBps/ RS-232 Transmitters/ReceiversFeatures+2.7V to +5.5V, 150Nanoamp, 250kBps, • Available in Near Chip Scale QFN (5mmx5mm) Package R ..
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IRF7524D1TR
-20V FETKY
PD -91648C
International
TOR Rectifier PRELIMINARY IRF7524D1
FETKWM MOSFET & Schottky Diode
o Co-packaged HEXFET© Power
MOSFET and Schottky Diode A DI‘ “333K v - 20V
0 P-Channel HEXFET A m2 43m DSS--
0 Low VF Schottk Rectifier 3 6
0 Generation 5Te3éhnology S DIP I ED RDS(0n) = 0.27n
o Micro8m Footprint G 514 51130
. Schottky Vf = 0.39V
Description Top View
The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the
designer an innovative board space saving solution for switching regulator
applications. Generation 5 HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. Combining this technology
with International Rectiher's low forward drop Schottky rectmers results in an
extremely ef5cient device suitable for use in a wide variety of portable electronics
applications like cell phone, PDA, etc.
The new Micr08TM package, with half the footprint area of the standard SO-8, provides
the smallest footprint available in an SOIC outline. This makes the Micr08TM an ideal Micro8
device for applications where printed circuit board space is at a premium. The low
proNe(<1.1mm)ofthe MicrosTM will allow it to ft easily into extremely thin application
environments such as portable electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter Maximum Units
'D@TA=25°C C ti D . C t v 45v -1.7
ID @ TA = 70°C on anOUS rain urren, GS @ - . -1 .4 A
IDM Pulsed Drain Current C) -14
Pro @TA = 25°C . . . 1.25
Po @TA = 70°C Power Dissipation 0.8
Linear Derating Factor 10 mW/°C
VGs Gate-to-Source Voltage i 12 V
dv/dt Peak Diode Recovery dv/dt © -5.0 V/ns
TJ,TSTG Junction and Storage Temperature Range -55 to +150 "C
Thermal Resistance Ratings
Parameter Maximum Units
ReJA l Junction-to-Ambient Ci) 100 "C/W
Notes:
OD Repetitive rating - pulse width limited by max. junction temperature (see Fig. 9)
© ISO 3 -1.2A, di/dt s 100A/ps, V00 3 V(BR)DSS: TJ 3 150°C
© Pulse width 5 300ps - duty cycle s 2%
G) When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance
1
01/29/99
IRF7524D1 International
IDR Rectifier
MOSFET Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 - - V VGs = 0V, ID = -250pA
RDS(on) Static Drain-to-Source On-Resistance - 0.17 0.27 Q VGS = -4.5V, ID = -1.2A ©
- 0.28 0.40 VGS = -2.7V, ID = -0.60A ©
VGS(th) Gate Threshold Voltage -0.70 - - V Vros = VGs, ID = -250pA
gfs Forward Transconductance 1.3 - - S Nhos = -10V, ID = -0.60A
loss Drain-to-Source Leakage Current - - -1.0 pA Vos = -16V, VGS = 0V
- - -25 Vos = -16V, VGS = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage - - -100 n A VGs = -12V
Gate-to-Source Reverse Leakage - - 100 N/ss = 12V
Qg Total Gate Charge - 5.4 8.2 ID = -1.2A
Qgs Gate-to-Source Charge - 0.96 1.4 nC Vros = -16V
di Gate-to-Drain ("Miller") Charge - 2.4 3.6 VGS = -4.5V, See Fig. 6 ©
Lian) Turn-On Delay Time - 9.1 - VDD = -10V
tr Rise Time - 35 - ns ID = -1.2A
tum) Turn-Off Delay Time - 38 - Rs = 6.052
tf Fall Time - 43 - Ro = 8.39, S
Ciss Input Capacitance - 240 - N/ss = 0V
Coss Output Capacitance - 130 - pF Vos = -15V
Crss Reverse Transfer Capacitance - 64 - f = 1.0MHz, See Fig. 5
MOSFET Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current(Body Diode) - - -1.25
ISM Pulsed Source Current (Body Diode) - - -9.6 A
VSD Body Diode Forward Voltage - - -1.2 V To = 25°C, ls = -1.2A, VGS = 0V
trr Reverse Recovery Time (Body Diode) .-.- 52 78 ns To = 25°C, IF = -1.2A
Gr Reverse Recovery Charge - 63 95 nC di/dt = 100A/ps©
Schottky Diode Maximum Ratings
Parameter Max. Units Conditions
IHaV) Max. Average Forward Current 1.9 A 50% Duty Cycle. RectangularWave, T, = 25°C
1.4 See Fig.14 TA = 70°C
ISM Max. peak one cycle Non-repetitive 120 5ps sine or 3ps Rect. pulse Following any rated
Surge current 11 A 10ms sine or 6ms Rect. pulse load condition &
with VRRM applied
Schottky Diode Electrical Specifications
Parameter Max. Units Conditions
VFM Max. Forward voltage drop 0.50 IF = 1.0A, T: = 25°C
0.62 V IF = 2.0A, T: = 25°C
0.39 I; = 1.0A, T: = 125''C
0.57 IF = 2.0A, Tu = 125°C.
IRM Max. Reverse Leakage current 0.02 m A VR = 20V Tu = 25°C
8 T: = 125°C
Ct Max. Junction Capacitance 92 pF VR = 5Vdc ( 100kHz to 1 MHz) 25°C
dv/dt Max. Voltage Rate of Charge 3600 V/ us Rated VR
(HEXFET is the reg. TM for International RectifIer Power MOSFET's)
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