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IRF7523D1TR
30V FETKY
PD- 91647C
International
TOR Rectifier IRF7523D1
FETKYTM MOSFET / Schottky Diode
o Co-packaged HEXFET© Power MOSFET 1
and Schottky Diode A DI 5111K vDss = 30V
o N-Channel HEXFET A 5:2 -7CrIIK
o Low VF Schottky Rectifier S BI 6:31 D Rrosom = 0.119
o Generation 5 Technology l
o MicroBTM Footprint G cE4 5333 D Schottky Vf = 0.39V
Description Top View
The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the
designer an innovative board space saving solution for switching regulator
applications. Generation 5 HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. Combining this technology
with International Rectifer's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable electronics
applications like cell phone, PDA, etc.
The new Micro8TM package, with half the footprint area of the standard SO-8, provides
the smallest footprint available in an SOIC outline. This makes the Micr08TM an ideal
device for applications where printed circuit board space is at a premium. The low
profile(<1.1mm)ofthe Micr08TM will allow it to fit easily into extremelythin application
environments such as portable electronics and PCMCIA cards.
Absolute Maximum Ratings (TA = 25''C unless otherwise noted)
Parameter Maximum Units
ID @ TA = 25°C Continuous Drain Current, VGS@10V@ 2.7 A
ID @ TA = 70°C 2.1
IDM Pulsed Drain Current co 21
Pro @TA = 25''C Power Dissipation GD 1.25 W
PD @TA = 70°C 0.8
Linear Derating Factor 10 WI°C
VGs Gate-to-Source Voltage , 20 V
dv/dt Peak Diode Recovery dv/dt © 6.2 V/ns
Tu TSTG Junction and Storage Temperature Range -55 to +150 ''C
Thermal Resistance Ratings
Parameter Maximum Units
' l Junction-to-Ambient © 100 ''C/W
Notes:
(I) Repetitive rating; pulse width limited by maximum junction temperature (see figure 11)
© ISD S 1.7A, di/dt S 120A/ps, VDD S V(BR)DSSI To S 150°C
© Pulse width 3 300ps; duty cycle s: 2%
© When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance
1
3/17/99
IRF7523D1 International
TOR Rectifier
MOSFET Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V VGS = 0V, ID = 250PA
RDSWD Static Drain-to-Source On-Resistance - 0.090 0.130 n VGs = 10V, ID = 1.7A ©
- 0.140 0.190 I/cs = 4.5V, ID = 0.85A C3)
VGS(th) Gate Threshold Voltage 1.0 - - V l/DS = Vas, ID = 250PA
git Forward Transconductance 1.9 - - S l/os = 10V, ID = 0.85A
loss Drain-to-Source Leakage Current - - 1.0 I/os = 24V, VGS = 0V
- - 25 pA I/os = 24V, veg = 0v, To = 125°C
IGSS Gate-to-Source Forward Leakage - - -100 n A VGS = -20V
Gate-to-Source Reverse Leakage - - 100 VGS = 20V
Qg Total Gate Charge - 7.8 12 ID = 1.7A
Qgs Gate-to-Source Charge - 1.2 1.8 nC Vos = 24V
di Gate-to-Drain ("Miller") Charge - 2.5 3.8 VGs = 10V (see figure 6) ©
tum") Turn-On Delay Time - 4.7 - VDD = 15V
tr Rise Time - 10 - ns ID = 1.7A
tum) Turn-Off Delay Time - 12 - Rs = 6.19
If Fall Time - 5.3 - R9 = 8.79 ©
Ciss Input Capacitance - 210 - Vss = 0V
Coss Output Capacitance - 80 - pF I/os = 25V
Crss Reverse Transfer Capacitance - 32 - f = 1.0MHz (see ngure 5)
MOSFET Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current (Body Diode) - - 1.25 A
ISM Pulsed Source Current (Body Diode) - - 21
V39 Body Diode Forward Voltage - - 1.2 V TJ = 25''C, Is = 1.7A, VGS = 0V
tr, Reverse Recovery Time (Body Diode) - 40 60 ns To = 25°C, Is = 1.7A
er Reverse Recovery Charge - 48 72 nC di/dt = 1OOA/ps©
Schottky Diode Maximum Ratings
Parameter Max. Units Conditions
Inav) Max. Average Forward Current 1.9 A 50% Duty Cycle. Rectangular Wave, TA = 25°C
1.3 See Fig.14 TA = 70°C
ISM Max. peak one cycle Non-repetitive 120 5ps sine or Bus Rect. pulse Following any rated
Surge current 11 A 10ms sine or 6ms Rect. pulse load condition &
with VRRM applied
Schottky Diode Electrical Specifications
Parameter Max. Units Conditions
Vo, Max. Forward voltage drop 0.50 IF = 1.0A, TJ = 25°C
0.62 IF = 2.0A, T: = 25°C
0.39 V IF = 1.0A, T, = 125°C
0.57 |F=2.0A,TJ=125°C .
IRM Max. Reverse Leakage current 0.06 m A VR = 30V T J = 25°C
16 TJ =125°C
c, Max. Junction Capacitance 92 pF VR = 5Vdc( 100kHz to 1 MHz) 25°C
dv/dt Max. Voltage Rate of Charge 3600 V/ us Rated VR
2
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