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IRF7521D1-IRF7521D1TR
20V FETKY
PD-91646C
International
TOR Rectifier PRELIMINARY IRF7521 D1
FETKY"' MOSFET / Schottky Diode
o Co-packaged HEXFET® Power MOSFET 1
and Schottky Diode A DI h, I 833" VDSS = 20V
o N-Channel HEXFET A me 4:]: K
0 Low VF Schottky Rectifier s BIL 6:3: D RDSW) = 01359
o Generation 5 Technology fit
o Micr08TM Footprint G DIP 5333 D Schottky Vf = 0.39V
Description Top View
The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the
designer an innovative board space saving solution for switching regulator
applications. Generation 5 HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. Combining this technology
with International Rectiher's low forward drop Schottky rectiflers results in an
extremely efficient device suitable for use in a wide variety of portable electronics
applications like cell phone, PDA, etc.
The new MicrosTM package, with half the footprint area of the standard SO-8, Micro8
provides the smallest footprint available in an SOIC outline. This makes the Micro8TM
an ideal device for applications where printed circuit board space is at a premium.
The low profile (<1.1mm) of the Micro8TM will allow it to fit easily into extremely thin
application environments such as portable electronics and PCMCIA cards.
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Parameter Maximum Units
ID @ TA = 25°C Continuous Drain Current, VGs @ 4.5V 2.4 A
|D@TA=70°C 1.9
IDM Pulsed Drain Current co 19
Po @TA = 25''C Power Dissipation 1.3 W
Po @TA = 70°C 0.8
Linear Derating Factor 10 mW/°C
Vss Gate-to-Source Voltage * 12 V
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to +150 "C
Thermal Resistance Ratings
Parameter Maximum Units
Rss l Junction-to-Ambient co 100 "C/W
Notes:
(I) Repetitive rating; pulse width limited by maximum junction temperature (see figure 9)
© ISD s 1.7A, di/dt s 66A/ps, vDD s V(BR)Dss, T J 5 150°C
© Pulse width S 300ps; duty cycle 3 2%
© Surface mounted on FR-4 board, ts 10sec.
1
01/29/99
IRF7521D1 International
TOR Rectifier
MOSFET Electrical Characteristics @ T J = 25''C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 - - V VGs = 0V, ID = 250pA
Rosom Static Drain-to-Source On-Resistance - 0.085 0.135 Q VGS = 4.5V, '0 = 1.7A ©
- 0.12 0.20 VGs = 2.7V, ID = 0.85A ©
Vegan) Gate Threshold Voltage 0.70 - - V 1/ros = VGs, ID = 250PA
gfs Forward Transconductance 2.6 - - S Vos = 10V, ID = 0.85A
loss Drain-to-Source Leakage Current - - 1.0 p A VDS = 16V, VGS = 0V
- - 25 Vos = 16V, VGS = 0V, To = 125°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 12V
Gate-to-Source Reverse Leakage - - -100 N/ss = -12V
09 Total Gate Charge - 5.3 8.0 ID = 1.7A
Qgs Gate-to-Source Charge - 0.84 1.3 nC VDs = 16V
di Gate-to-Drain ("Miller") Charge - 2.2 3.3 VGS = 4.5V, See Fig. 6 ©
tdmn) Turn-On Delay Time - 5.7 - VDD = 10V
tr Rise Time - 24 - ns ID = 1.7A
td(off) Turn-Off Delay Time - 15 - Rs = 6.09
tr Fall Time - 16 - RD = 5.79, ©
Ciss Input Capacitance - 260 - Vss = 0V
Cass Output Capacitance - 130 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 61 - f = 1.0MHz, See Fig. 5
MOSFET Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current(Body Diode) - - 1.3
IsM Pulsed Source Current (Body Diode) - - 14 A
VSD Body Diode Forward Voltage - - 1.2 V TJ = 25°C, ls = 1.7A, VGs = 0V
trr Reverse Recovery Time (Body Diode) - 39 59 ns To = 25''C, IF = 1.7A
Qrr Reverse RecoveryCharge - 37 56 nC di/dt = 100A/ps ©
Schottky Diode Maximum Ratings
Parameter Max. Units. Conditions
lnav, Max. Average Forward Current 1.9 A 50% Duty Cycle. Rectangular Wave, TA = 25''C
1.4 See Fig.14 TA = 70°C
ISM Max. peak one cycle Non-repetitive 120 5ps sine or Bus Rect. pulse Following any rated
Surge current 11 A 10ms sine or ems Rect. pulse load condition &
with VRRM applied
Schottky Diode Electrical Specifications
Parameter Max. Units Conditions
VFM Max. Forward voltage drop 0.50 IF = 1.0A, T: = 25°C
0.62 V l; = 2.0A, T: = 25°C
0.39 IF = 1.0A, T, = 125°C
0.57 IF = 2.0A, To = 125°C .
IRM Max. Reverse Leakage current 0.02 m A I/e = 20V T: = 25°C
8 T, = 125°C
C, Max. Junction Capacitance 92 pF VR = 5Vdc( 100kHz to 1 MHz) 25°C
dv/dt Max. Voltage Rate of Charge 3600 V/ us Rated VR
(HEXE‘ET is the reg. 'I'Mfor International Rectifier Power MOSFET'S )
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