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IRF7509TRPBF
30V Dual N- and P- Channel HEXFET Power MOSFET in a Micro 8 package
International
araRRectifier
IRF7509PbF
HEXFET© Power MOSFET
Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Fast Switching
Lead-Free
N-CHANNEL MOSFET
S1EEE :EDD1
G113: :EDD1
TE: D2
5331 D2
P-CHANNEL MOSFET
S2 cr'-
Top View
N-Ch P-Ch
I/ross 30V -30V
ROW) 0.119 0.209
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The new Micr08 package, with half the footprint area of the standard SO-8,
provides the smallest footprint available in an SOIC outline. This makes the
Micr08 an ideal device for applications where printed circuit board space is at
a premium. The low profile (<1.1mm) of the Micr08 will allow it to fit easily into
extremely thin application environments such as portable electronics and
PCMCIA cards.
Absolute Maximum Ratings
Parameter Max. Units
N-Channel P-Channel
l/os Drain-Source Voltage 30 -30 V
ID @ TA = 25°C Continuous Drain Current, l/ss 2.7 -2.0
In @ TA = 70°C Continuous Drain Current, Vss 2.1 -1.6 A
IDM Pulsed Drain Current(0 21 -16
PD @TA = 25°C Maximum Power Dissipation@ 1.25 W
PD @TA = 70°C Maximum Power Dissipation@ 0.8 W
Linear Derating Factor 10 mW/°C
N/ss Gate-to-Source Voltage , 20 V
VGSM Gate-to-Source Voltage Single Pulse tp<10pS 30 V
dv/dt Peak Diode Recovery dv/dt C) 5.0 V/ns
Tu , Ts-re Junction and Storage Temperature Range -55 to + 150 °C
Soldering Temperature, for 10 seconds 240 (1.6mm from case)
Thermal Resistance
Parameter Max. Units
Ras Maximum Junction-to-Ambient G) 100 °C/W
1
6/15/04
IRF7509PbF
International
TOR Rectifier
Electrical Characteristics T = 25°C unless otherwise s ecified
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 'ldl,1 g, I I V 'e: : tj, ll: : 'glt,
. N-Ch - 0.059 - tt Reference to 25''C, ID = 1mA
AV(BR)DSSIATJ Breakdown VoltageTemp.Coefficient P-Ch - -0.039 - V/ C Reference to 25°C, ID = -1mA
N Ch - 0.09 0.110 Ves =10V,lo =1.7A @
. . - - - . - - 0.14 0.175 VGS = 4.5V, ID = 0.85A ©
RDS(0N) Static Drain to Source On Resistance P-Ch - th17 0.20 n VGS = -10V, ID =-1.2A ©
- 0.30 0.40 VGS = MSU, ID =-O.6A C4)
VGSM) Gate Threshold Voltage N-Ch 1.0 - - v Vos = Vss, lo = 250PA
P-Ch -1.0 - - Vos = Vas, ID = -250pA
gfs Forward Transconductance 'tg,1 Jil I I s xi: C0l(R,==0di'l) © ©
N-Ch - - 1.0 Vos = 24 V, l/ss = 0V
IDSS Drain-to-Source Leakage Current P-Ch - - M.0 pA Vos = -24V, I/tss = 0V
N-Ch - - 25 Vos = 24 V, VGs = 0V, To = 125°C
P-Ch - - -25 Vos = -24V, VGS = 0V, To = 125"C
less Gate-to-Source Forward Leakage N-P - - i100 VGs = i 20V
Qg Total Gate Charge N-Ch - 7.8 12 N-Channel
P-Ch - 7.5 11 - - -
N-Ch - 1 2 1 8 ID =1.7A,VDs - 24V, VCs - 10V
Qgs Gate-to-SourceCharge . . nC ©
P-Ch - 1.3 1.9
. " . " N-Ch -- 2.5 3.8 P-Channel
di Gate-to-Draln( Miller )Charge P-Ch - 2 5 3 7 ID = -1.2A, Vros = -24V, Vas = MOV
tam") Turn-On Delay Time :3: I 3; I N-Channel
. . N-Ch - 1'0 - Vor; =15V,ID =1.7A,RG = 6.19,
t, Rise Time P-Ch - 12 - RD = 3.79
. N-Ch - 12 - ns ©
td(ott) Turn-Off Delay Time P-Ch - 19 - P-Channel
. N-Ch - 5 3 - Voo = -15V, ID = -1.2A, Rs = 6.29,
tr Fall Time P-Ch - 9:3 - RD = 129
Ciss Input Capacitance #3: - Q] - N-Channel
- - - VGS = 0V, Vos = 25V, f = 1.0MHz
Coss Output Capacitance N-Ch - 80 - pF ©
P-Ch - 87 -
N Ch 32 P-Channel
Crss Reverse Transfer Capacitance P-Ch - 42 - VCs = 0V, Vros = -25V, f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min Tvp Max. Units Conditions
N-Ch - - 1.25
ls Continuous Source Current (Body Diode) P-Ch - - -l .25 A
N-Ch - - 21
ISM Pulsed Source Current (Body Diode) (O P-Ch - - -16
. N-Ch - - 1.2 V T., = 25'C, Is = 1.7A, I/ss = 0V (3)
I/so Diode Forward Voltage P-Ch - - -1.2 T., = 25''C, Is = -1.8A, Vas = 0V (3)
. N-Ch - 40 60 N-Channel
'" Reverse Recovery Time P-Ch - 30 45 T, = 25''C, Is = 1.7A, di/dt = 100A/ps
N-Ch - 48 72 P-Channel (3)
q, Reverse Recovery Charge P-Ch - 37 55 " To = 25°C, IF = -1.2A, di/dt = -100Alps
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 21 )
© N-Channel ISD S 1.7A, di/dt S 120/Ups, VDD S ViBR)ross, Tu f 150''C
P-Channel 'so s -1.2A, di/dt s 160/Ups, VDDS V(BR)ross, Tu S 150°C
© Pulse width S 300ps; duty cycle I 2%.
© Surface mounted on FR-4 board, t S 10sec.
