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IRF7509-IRF7509TR
30V Dual N- and P- Channel HEXFET Power MOSFET in a Micro 8 package
International PD-91270J
IeaR Rectifier IRF7509
HEXFET® Power MOSFET
0 Generation V Technology N-CHANNELM0SFET
0 Ultra Low On-Resistance Sl EP 83301 N-Ch P-Ch
o Sual g anlclj SPCE‘igagneLMOSFET G1 E2 7:3: D1
0 ery ma ac age -
o Low Profile(<1.1mm) S2 EL 6302 VDSS 30V 30V
0 Available in Tape & Reel G2 [rrr/-- 5:11 D2
0 Fast Switching ''iriN,CiCv" RDSW) (1119 0209
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The new Micr08 package, with half the footprint area of the standard SO-8,
provides the smallest footprint available in an SOIC outline. This makes the M icr08
Micr08 an ideal device for applications where printed circuit board space is at
a premium. The low prohle (<1 .1 mm) of the Micr08 will allow it to fit easily into
extremely thin application environments such as portable electronics and
PCMCIA cards.
Absolute Maximum Ratings
Parameter Max. Units
N-Channel P-Channel
VDS Drain-Source Voltage 30 -30 V
ID @ TA = 25°C Continuous Drain Current, VGs 2.7 -2.0
ID @ TA = 70°C Continuous Drain Current, VGS 2.1 -1.6 A
IDM Pulsed Drain CurrentC) 21 -16
PD @TA = 25°C Maximum Power Dissipation]) 1.25 W
PD @TA = 70°C Maximum Power Dissipation@ 0.8 W
Linear Derating Factor 10 mW/°C
VGs Gate-to-Source Voltage 4c 20 V
VGSM Gate-to-Source Voltage Single Pulse tp<10pS 30 V
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
T J , TSTG Junction and Storage Temperature Range -55 to + 150 "C
Soldering Temperature, for 10 seconds 240 (1.6mm from case)
Thermal Resistance
Parameter Max. Units
Ram Maximum Junction-to-Ambient © 100 ''CIW
1
12/1/98
IRF7509
International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
. N-Ch 30 - - VGs = 0V, ID = 250PA
V Dra n-to-So rce Breakdo nVoIta e
(BR)DSS I u w g P-Ch -30 - - V Ves = OV, ID = -250PA
. N-Ch - 0.059 - Reference to 25°C ID = 1mA
AV MT Breakdo nVoIta eTem .Coeffc ent Q '
(BR)DSS J w g p I I P-Ch - -o.039 - V/ C Reference to 25°C, ID = -1mA
N-Ch - 0.09 0.110 VGS =10V, ID =1.7A co
RDS(ON) Static Drain-to-Source On-Resistance - 0.14 0.175 f2 VGS = 4.5V, ID = 0.85A ©
P-Ch - 0.17 0.20 VGS = -10V, ID =-1.2A G)
- 0.30 0.40 VGS = -4.5V, ID =-0.6A ©
N-Ch 1.0 - - I/rss = Vas, ID = 250pA
V Th h I V I
GS(th) Gate res old oltage P-Ch -1.0 - - V Ws = VGS, ID = -250pA
N-Ch 1.9 - - VDS =10V,lo = 0.85A G)
gfs orward ransconductance P-Ch 0.92 - - s Vos = -10V, lo = -0.6A ©
N-Ch - - 1.0 l/DS = 24V,Vss = OV
. P-Ch - - -1.0 VDs = -24V, Veg = 0V
I D -t -S L k C t
DSS ran 0 ource ea age urren N-Ch - - 25 pA VDS = 24 V, Vss = 0V, T: = 125°C
P-Ch - - -25 Ws = -24V, VGs = 0V, To = 125''C
less Gate-to-Source Forward Leakage N-P - - 1100 l/GS = , 20V
Qg Total Gate Charge 'Ili," : $2 1 N-Channel
N-Ch - 1'2 1 8 ID = 1.7A, Vos = 24V, VGS = 10V
Qgs Gate-to-Source Charge P-Ch - 1.3 1.9 no co
. " . " N-Ch - 2.5 3.8 P-Channel
di Gate-to-Drain; Miller )Charge P-Ch - 2.5 3.7 ID = -1 .2A, Vos = -24V, VGS = -10V
tmn) Turn-On Delay Time 2:32 I g; I N-Channel
t Ri Ti N-Ch - 1'0 - VDD = 15V, ID =1.7A, RG = 6.19,
r Ise Ime P-Ch - 12 - ns RD = 8.7f2 ©
tam Turn-Off Delay Time 1:22 I 1&2) I P-Channel
. N-Ch - 5 3 - VDD = -15V, ID = -1.2A, Rs = 6.29,
tf Fall Time P-Ch - 9.3 - RD = 12n
Ciss Input Capacitance :2: - 'ig - N-Channel
- - - l/ss = 0V, VDS = 25V, f = 1.0MHz
Coss Output Capacitance N-Ch - 80 - pF ©
P-Ch - 87 -
N Ch 32 P-Channel
Crss Reverse Transfer Capacitance P:Ch I 42 I VGS = 0V, VDS = -25V, f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min Typ Max. Units Conditions
N-Ch - - 1.25
Is Continuous Source Current (Body Diode) P-Ch - - -1 .25 A
N-Ch - - 21
ISM Pulsed Source Current (Body Diode) co P-Ch - - -16
. N-Ch - - 1.2 To = 25°C, Is = 1.7A, VGS = 0V ©
VSD Diode ForwardVoltage P-Ch - - -1.2 TJ = 25''C, ls = -1.8A, VGS = 0V ©
. N-Ch - 40 60 N-Channel
trr Reverse Recovery Time P-Ch - 30 45 To = 25°C, IF = 1.7A, di/dt = 100A/ps
N-Ch - 48 72 P-Channel Cs)
Qrr Reverse Recovery Charge P-Ch - 37 55 nC TJ = 25°C, IF = -1.2A, di/dt = -100A/ps
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 21 )
© N-Channel Iso S 1.7A, di/dt S 120/Ups, VDD S V(BR)ross, Tu 5 150°C GD Surface mounted on FR-4 board, ts 10sec.
P-Channel ISD S -1.2A, di/dt S 160A/ps, VDD S V(BR)DSS) Tu 5 150°C
© Pulse width S 300ps; duty cycle S 2%.
