IRF7506TRPBF ,-30V Dual P-Channel HEXFET Power MOSFET in a Micro 8 packageapplications where printed circuit board space is at a
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IRF7506TRPBF ,-30V Dual P-Channel HEXFET Power MOSFET in a Micro 8 packageInternational
TOR RectifierHEXFET® Power MOSFET
Generation V Technology
Ultra Low On-Resistance
..
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IRF7506TRPBF
-30V Dual P-Channel HEXFET Power MOSFET in a Micro 8 package
PD - 95696
International
Tart, Rectifier IRF7506PbF
. Lead-Free HEXFETD Power MOSFET
. Generation V Technology
. Ultra Low On-Resistance 81.1; 3:11:01
. Dual P-Channel MOSFET G1 E I 7mm VDss = -30V
0 Very Small SOIC Package _
0 Low Profile (<1.1mm) $2 ctr3- l 6:11:92
. Available in Tape & Reel G E 531302 RDS(on) = 0.27n
0 Fast Switching .
Description Top View
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedizeddevicedesignthatHEXFEl' PowerMOSFETs
are well known for, provides the designerwith an extremely
efficient and reliable device for use in a wide variety of
applications.
The new M icr08 package, with halfthe footprintarea ofthe
standard SO-8, provides the smallestfootpri nt availa ble in
an SOIC outline. This makes the Micros an ideal device
for applications where printed circuit board space is at a MICRO8
premium. The low profile (<1.1mm) of the Micros will
allow it to tit easily into extremely thin application
environments such as portable electronics and PCMCIA
cards.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, l/s tp -10V -1.7
ID © TA = 70°C Continuous Drain Current, l/s tt -10V -1.4 A
bs, Pulsed Drain Current OD -9.6
PD @TA = 25°C Power Dissipation 1.25 W
Linear Derating Factor 10 mWPC
Vos Gate-to-Source Voltage i 20 V
dv/dt Peak Diode Recovery dv/dt C) 5.0 V/ns
TJ Tsro Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance Ratings
Parameter Typ. Max. Units
RQJA Maximum Junction-to-Ambient) - 100 oc/W
All Micros Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
9/2/04
IRF7506PbF International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -30 - - V Vos = ov, ID = -250PA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coemcient - -0.039 - V/°C Reference to 25''C, ID = -1mA
Roam) Static Drain-to-Source On-Resistance - - 0.27 Q 1hss = -10V, ID = M.2A ©
- - 0.45 Ves = -4.5V, ID = -0.60A ©
VGS(th) Gate Threshold Voltage -1 0 - - V Ws = Veg. ID = -250pA
gt Forward Transconductance 0.92 - - S Ws = -10V, ID = -0.60A
loss Drain-to-Source Leakage Current :: :: If pA x3: ;:::\\: x: =- C, Tu = 125°C
less Gate-to-Source Forward Leakage - - -100 nA Veg = -20V
Gate-to-Source Reverse Leakage - - 100 Vos = 20V
q, Total Gate Charge - 7.5 11 ID = -1.2A
Qgs Gate-to-Source Charge - 1.3 1.9 nC Mos = -24V
di Gate-to-Drain ("Miller") Charge - 2.5 3.7 Vos = -10V. See Fig. 6 and 9 s
[mm Turn-On Delay Time - 9.7 - VDD = -15V
tr Rise Time - 12 - ns ID = -1.2A
tum) Turn-Off Delay Time - 19 - Rs = 6.29
tr Fall Time - 9.3 - RD =12fk See Fig. 10 S
Css Input Capacitance - 180 - Vos = 0V
Cogs Output Capacitance - 87 - pF VDs = -25V
Crss Reverse Transfer Capacitance - 42 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - -1.25 showing the
ISM Pulsed Source Current - - -9. 6 integral reverse G
(Body Diode) co p-n junction diode. 5
VSD Diode Forward Voltage - - -1.2 V Tu = 25''C, IS = -1.2A, I/ss = 0V ©
trr Reverse Recovery Time - 30 45 ns To = 25''C, IF = -1.2A
er Reverse RecoveryCharge - 37 55 nC di/dt = -100A/ps ©
Notes:
co Repetitive rating - pulse width limited by max. junction temperature (see fig. 11)
© '80 S -1.2A, di/dt S -140A/ps, VDD S V(BR)DSS. Tu S 150°C
© Pulse width S 300ys - duty cycle S 2%
C4) Surface mounted on FR-4 board, t s: 10sec.
2
