IRF7506 ,-30V Dual P-Channel HEXFET Power MOSFET in a Micro 8 packageapplications where printed circuit board space is at apremium. The low profile (<1.1mm) of the Mic ..
IRF7506 ,-30V Dual P-Channel HEXFET Power MOSFET in a Micro 8 packageapplications where printed circuit board space is at apremium. The low profile (<1.1mm) of the Mic ..
IRF7506 ,-30V Dual P-Channel HEXFET Power MOSFET in a Micro 8 packageapplications.The new Micro8 package, with half the footprint area of thestandard SO-8, provides the ..
IRF7506 ,-30V Dual P-Channel HEXFET Power MOSFET in a Micro 8 packagePD - 9.1268FIRF7506®HEXFET Power MOSFETl Generation V Technology1 8l Ultra Low On-ResistanceS1 D1V ..
IRF7506TR ,-30V Dual P-Channel HEXFET Power MOSFET in a Micro 8 packagePD - 9.1268FIRF7506®HEXFET Power MOSFETl Generation V Technology1 8l Ultra Low On-ResistanceS1 D1V ..
IRF7506TRPBF ,-30V Dual P-Channel HEXFET Power MOSFET in a Micro 8 packageapplications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Mi ..
ISL3690IR ,Dual Band Direct Conversion TransceiverSYNTH_VDDSYNTH_GNDCP_GNDCP_DOCP_VDDCLKREF_INQLO_GND_2LO_IN-LO_IN+QLO_GNDQLO_VCCTX_BB_GNDTX_BB_VCCTX ..
ISL3690IR-TK ,Dual Band Direct Conversion TransceiverFeaturesThe Intersil ISL3690 is a highly • Highly integrated Dual Band RF to baseband solutioninteg ..
ISL3871IK18 ,Wireless LAN Integrated Medium Access Controller with Vaseband ProcessorFeaturesController with Baseband Processor• USB host interface supports USB V1.1 at 12Mbps.The Inte ..
ISL3871IK18-TK , Wireless LAN Integrated Medium Access Controller with Baseband Processor
ISL3871IK18-TK , Wireless LAN Integrated Medium Access Controller with Baseband Processor
ISL3871IN18 , Wireless LAN Integrated Medium Access Controller with Baseband Processor
IRF7506-IRF7506TR
-30V Dual P-Channel HEXFET Power MOSFET in a Micro 8 package
International
TOR, Rectifier
Description
Fifth Generation HEXFETs from International Rectifier
Generation V Technology
Ultra Low On-Resistance
Dual P-Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in_Tape & Reel G2 II A__, 5 II '02 RDS(on) = 0279
o Fast Switching -
PD - 9.1268F
IRF7506
HEXFET® Power MOSFET
S1LL®tJuD1 V - 30V
7WD1 DSS-
G1 -TI-2-
S2 -LL3- '-uLio2
Top View
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designerwith an extremely
efficient and reliable device for use in a wide variety of
applications.
The new Micr08 package, with half the footprint area ofthe
standard 80-8, provides the smallestfootprint available in
an SOIC outline. This makes the Micr08 an ideal device
for applications where printed circuit board space is at a MICRO8
premium. The low profile (<1.1mm) of the Micr08 will
allow it to fit easily into extremely thin application
environments such as portable electronics and PCMCIA
cards. . .
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, Ves @ -10V -1.7
In @ TA = 70°C Continuous Drain Current, VGS @ -10V -1.4 A
IDM Pulsed Drain Current co -9.6
PD @TA = 25°C Power Dissipation 1.25 W
Linear Derating Factor 10 mW/°C
VGS Gate-to-Source Voltage i 20 V
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
T J TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance Ratings
Parameter Typ. Max. Units
RGJA Maximum Junction-to-Ambient) - 100 "CMI
All Micr08 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
8/25/97
IRF7506 International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)Dss Drain-to-Source Breakdown Voltage -30 - - V VGs = ov, ID = -250pA
AV
RDSW) Static Drain-to-Source On-Resistance - - 0.27 g VGS = -10V, ID = -l 2N ©
- - 0.45 VGs = -4.5V, ID = -0.60A ©
VGS(th) Gate Threshold Voltage -1.0 - - V Ws = VGs, ID = -250pA
git Forward Transconductance 0.92 - - S VDs = -10V, ID = -0.60A
loss Drain-to-Source Leakage Current - - -1.0 PA VDS = -24V, VGS = 0V 0
- - -25 Ws = -24V, VGs = 0V, To = 125 C
less Gate-to-Source Forward Leakage - - -100 n A VGs = -20V
Gate-to-Source Reverse Leakage - - 100 VGs = 20V
Qg Total Gate Charge - 7.5 11 ID = -1.2A
Qgs Gate-to-Source Charge - 1.3 1.9 nC VDs = -24V
di Gate-to-Drain ("Miller") Charge - 2.5 3.7 VGs = -1OV, See Fig. 6 and 9 G)
Gon) Turn-On Delay Time - 9.7 - VDD = -15V
tr Rise Time - 12 - ns ID = -1.2A
td(off) Turn-Off Delay Time - 19 - Rs = 6.29
tr Fall Time - 9.3 - RD = 129, See Fig. 10 C3)
Ciss Input Capacitance - 180 - VGs = 0V
Cogs Output Capacitance - 87 - pF VDs = -25V
Crss Reverse Transfer Capacitance - 42 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - -1.25 showing the
ISM Pulsed Source Current - - - 9. 6 integral reverse G
(Body Diode) co p-n junction diode. s
VSD Diode Forward Voltage - - -1.2 v T J = 25°C, ls = -1.2A, l/ss = 0v ©
tn Reverse Recovery Time - 30 45 ns TJ = 25°C, IF = -1.2A
er Reverse RecoveryCharge - 37 55 nC di/dt = -1OOA/us ©
Notes:
C) Repetitive rating - pulse width limited by max. junction temperature (see fig. 11)
Q) ISD S -1.2A, di/dt S -140Alps, VDD f V(BR)DSS, Tu f 150°C
© Pulse width 3 300ps - duty cycle f 2%
GD Surface mounted on FR-4 board, ts 10sec.
