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IRF7504PBF
-20V Dual P-Channel HEXFET Power MOSFET in a Micro 8 package
International
:raRIectifier
Generation V Technology
Ultra Low On-Resistance
Dual P-Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Fast Switching
. Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFErs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications
The new Micro8 package, with halfthe footprint area ofthe
standard 508, provides the smallest footprint available in
an SOIC outline. This makes the Micro8 an ideal devicefor
applications where printed circuit board space is at a
premium The low profile (<1 1mm) ofthe Micros will allow
it to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards.
Absolute Maximum Ratings
PD- 95912
|RF7504PbF
HEXFETD Power MOSFET
31D:L 3:133:11
(Mm:2 l Latte VDSS=_2OV
szEIIL 6:11:02
G2 DI" l 520302 RDS(on) = 0.27f2
Top View
Parameter Max. Units
b ' TA = 25°C Continuous Drain Current, V03 (t -4.5V -1.7
b ' TA -- 70°C Continuous Drain Current. Vas (i) -4.5V -1.4 A l
b, Pulsed Drain Current (D -9.6
PD@TA = 25°C Power Dissipation 1.25 W
Linear Derating Factor 10 mWI'0
Vss Gale-lo-Sane Voltage :12 V
dv/dl Peak Diode Recovery th/dl C -5.0 V/ns
TJITSTG Junction and Storage Temperature Range -55 to + 150 T
Thermal Resistance
Parameter Typ. Max. Units
RM Maximum Junction-loAmbientQD - 100 'ull
All MicroB Data Sheds relied improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Dale Code 505 or later .
1
2/22/05
IRF7504PbF International
TOR Rectifier
Electrical Characteristics e Tu = 25°C (unless otherwise specified)
Parameter Min, Typ. Max, Units Conditions
Wsvss Drain-to-Source Breakdown Voltage -20 - - V Veg = (IV, b = -250pA
hWrpsyhTo Breakdown Voltage Temp. Coeieent - -0.012 - V/T Reference to 25T, lo = -1mA
. . . - - 0.27 l/ss = -4.5V. b = -1.2A 3
Rose Static Ckiyh-ltySource Cn-Resistance - - (M() n Ves = -2.N, b = -0.60 A Q
VGS(th) Gate Threshold Voltage -0.70 - - V Vos = V05. b = -250pA
gt Forward Transconductance 1.3 - - S l/os = -10V, b = 4).60A
loss Crith-ttySourtm Leakage Current - - -1/) pA Vos = -1W, lhss = l
- - -25 l/os = AW, Vas = W, T: = 125°C
less Gate-toSource Forward Leakage - - -100 n A Veg =-12V
Gale-tire Reverse Leakage - - 100 Veg = +12V
th Total Gate Charge - 54 82 ID = -1.2A
Qgs Gate-toSource Charge - 0.96 1.4 nC Vos = -16V
di Gate-to-Drain ("Miller") Charge - 2.4 3.6 l/ss = M.5V, See Fig. 6 and 9 Q
td(0n) Turn-On Delay Time - 9.1 - l/oo =-10V
tr Rise Time - 35 - M ID =-1.2A
tam) Turn-Off Delay Time - 38 - Rs = 6.09
tr Fall Time - 43 - RD = 8.39 See Fig. 10 Q
Ciss Input Capacitance ---. 240 - Veg = (A/
Coss Output Capacitance - 130 - pF 1 Vos = -15V
Crss Reverse Transfer Capacitance - 64 - 1 f-- 1.0MHz. See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min, Typ. Max. Units Conditions
Is Continuous Source Current - - _ 1.25 MOSFET symbol I)
(Body Diode) A showing the
ISM Pulsed Source Current - - -9.6 integral reverse 0
(Body Diode) G) p-n junction diode. s
Vso Diode Forward Voltage - - -1.2 V f: = 25T, ls = -1.2A. l/ss = (h/ Q
tn’ Reverse Recovery Time - 52 78 M T1: 25°C, IF = -1.2A
Q,, Reverse RecoveryCharge - 63 95 M) di/dt = 100A/ps3
ton Forward Tum-On Time Intrinsic tum-tm time is negligible (tum-on is dominated by L3+ Lo)
Notes:
C) Repetitive rating: pulse width limited by Q Pulse width f 300ps: duty cycle f 2%
max. junction temperature, ( See fg 11 )
C) bro S -1.2A, di/dt S 100A/ps, VDD s: l/mms, @ Surface mounted on FR-4 board, ts 10sec.
T15150°C
2
