IRF7503TRPBF ,30V Dual N-Channel HEXFET Power MOSFET in a Micro 8 packageInternational
TOR RectifierWuan-eDem.
HEXFET® Power MOSFET
Generation V Technology
Ultra Lo ..
IRF7504 ,-20V Dual P-Channel HEXFET Power MOSFET in a Micro 8 packageapplications where printed circuit board space is at apremium. The low profile (<1.1mm) of the Mic ..
IRF7504 ,-20V Dual P-Channel HEXFET Power MOSFET in a Micro 8 packagePD - 9.1267GIRF7504®HEXFET Power MOSFETl Generation V Technology18l Ultra Low On-ResistanceS1 D1l D ..
IRF7504 ,-20V Dual P-Channel HEXFET Power MOSFET in a Micro 8 packageapplications.The new Micro8 package, with half the footprint area of theMicro8standard SO-8, provid ..
IRF7504 ,-20V Dual P-Channel HEXFET Power MOSFET in a Micro 8 packageapplications.The new Micro8 package, with half the footprint area of theMicro8standard SO-8, provid ..
IRF7504PBF ,-20V Dual P-Channel HEXFET Power MOSFET in a Micro 8 packageapplications mere pnmed cmm mam space IS at a
premmm The \owpmme (<1 1rrorrttyrtheMicrtivillalltyw ..
ISL3690IR ,Dual Band Direct Conversion TransceiverSYNTH_VDDSYNTH_GNDCP_GNDCP_DOCP_VDDCLKREF_INQLO_GND_2LO_IN-LO_IN+QLO_GNDQLO_VCCTX_BB_GNDTX_BB_VCCTX ..
ISL3690IR-TK ,Dual Band Direct Conversion TransceiverFeaturesThe Intersil ISL3690 is a highly • Highly integrated Dual Band RF to baseband solutioninteg ..
ISL3871IK18 ,Wireless LAN Integrated Medium Access Controller with Vaseband ProcessorFeaturesController with Baseband Processor• USB host interface supports USB V1.1 at 12Mbps.The Inte ..
ISL3871IK18-TK , Wireless LAN Integrated Medium Access Controller with Baseband Processor
ISL3871IK18-TK , Wireless LAN Integrated Medium Access Controller with Baseband Processor
ISL3871IN18 , Wireless LAN Integrated Medium Access Controller with Baseband Processor
IRF7503TRPBF
30V Dual N-Channel HEXFET Power MOSFET in a Micro 8 package
PD- 95346
International
TOR Rectifier IRF7503PbF
HEXFET® Power MOSFET
. Generation V Technology
0 Ultra Low On-Resistance 515:; _ am DI
. Dual N-Channel MOSFET A =
(31:12:2 iii; 711301 Voss 30V
. Very Small SOIC Package
0 Low Profile (<1.1mm) $2 af- 'tlj,':, Di
0 Available ilTape & Reel Gi A El; 531302 RDS(on) = 0.135n
0 Fast Switching
. Lead-Free Top View
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area, This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, providesthe designerwith an extremely efficient
and reliable device for use in a wide variety of applications.
The new Micro8 package, with halfthe footprint area ofthe M icr08
standard SO-8, provides the smallestfootprint available in
an SOIC outline. This makesthe Micr08 an ideal device for
applications where printed circuit board space is at a
premium. The Iowprofile (<1.1mm) ofthe Micr08 will allow
it to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter Max. Units
b C) TA = 25°C Continuous Drain Current, Veg C) 10V 24
b C) TA = 70°C Continuous Drain Current, Vas C) 10V 1.9 A
IDM Pulsed Drain Current O) 14
PDQTA = 25''C Power Dissipation 1.25 W
Linear Derating Factor 10 mWPC
Veg Gate-to-Source Voltage , 20 V
dv/dt Peak Diode Recovery dv/dt C) 5.0 V/ns
TJ‘TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Parameter Typ. Max. Units
RM Maximum Junction-to-Ambient) - 100 "C/W
Al Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
1
02/22/05
IRF7503PbF International
TOR Rectifier
Electrical Characteristics (ii) T: = 25'C (unless otherwise specified)
Parameter Min. Typ. Max, Units Conditions
Wmnss Drain-to-Source Breakdown Voltage 30 - - V Vos = W, '0 = 250PA
.xVIBRDss/ATJ Breakdown Voltage Temp. Coentiett - 0.059 - V/°C Reference to 25'0, ID = 1mA
. ' . - -- 0.135 Vcs =10V,ID =1.7A a)
Rosm Static DraIn-toSouroe (YrResistanay - - 1222 Q Vss -- 4.5V. ID = 0.85 A a)
Vssitr) Gate Threshold Voltage 1.0 - -.-. V Vos = Vss, b = 250pA
grs Forward Transconductance 1.9 - - S Vos = 10V, lo = 0.85A
loss Drain-toSouroe Leakage Current - - 1.0 p A Vos IT 24V, Vss = 0V
- - 25 Vos ct 24V, Vcs = 0V, T: = 125°C
I Gate-to-Source Forward Leakage - - -100 n A l/ss = -20V
GSS Gate-to-Source Reverse Leakage - - 100 l/tss = 20V
09 Total Gate Charge - 7.8 12 b -- 1.7A
As Gattrtoirce Charge - 1.2 1.8 no Vos r. 24V
di Gate-to-Drain ("Miller") Charge -.-. 2.5 3.8 Vss = 10V, See Fig. 6 and 9 Cs)
two", Tum-On Delay Time - 4.7 - VDD = 15V
t, Rise Time - 10 - n Io = 1.7A
tag") Turn-Off Delay Time - 12 - s Re = 6.19
t: Fall Time - 5.3 - Ro = 8.7!), See Fig. 10 Q
Css Input Capacitance - 210 - Vas = (h/
Coss Output Capacitance - 80 - pF Vos , 25V
Crss Reverse Transfer Capacitance - 32 - f = 1.0MH2. See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 1 25 MOSFET symbol " u ‘4:
(Body Diode) ' A showing the I 1% I
ISM Pulsed Source Current - - 14 integral reverse '-V 'i-ir
(Body Diode) Cl) p-n Junctlon dlode. \‘/Is
VSD Diode Forward Voltage - - 1.2 V T: = 25°C, ls = 1.7A, l/ss = ()V (S)
tn Reverse Recovery Time - 40 60 ns To -- 25''C, l; = 1.7A
(h Reverse RecoveryCharge - 48 72 nC di/dt = 100A/ps a)
Notes:
(D Repetitive rating; pulse width limited by (3 Pulse width S 300113; duty cycle S 2%
max. junction temperature. I See fg 11 )
Cl) Iso f 1.7A, di/dt s 120Alps, V00 f Vaavss, @ Surface mounted on FR-4 board, ts 10sec.
Tos 150°C
2
http://www.ic-phoenix.com/
