IRF7495TRPBF ,100V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsDSS DS(on) D High frequency DC-DC converters22m @V = 10V100V
IRF7495TRPBF
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package
PD - 95288
International
TOR Rectifier IRF7495PbF
HEXFETO Power MOSFET
Aplglitilagions DC DC VDSS RDS(on) max ID
q i re uenc - converters
. Legd_Frge y 100V 22mQ@VGS = 10V 7.3A
Benefits
o Pt Gate to Drain Charge to Reduce s E1 , 533: D
Switching Losses 2 7 _ c: c, V
o Fully Characterized Capacitance Including s E E E D ,/i/i)r,c:r,,tiy
Effective Coss to Simplify Design, (See s E113 6:11 D /Y '
App. Note AN1001) Gnr-4 £3110
o Fully Characterized Avalanche Voltage
and Current Top View SO-8
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 100 V
VGs Gate-to-Source Voltage 1 20
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 7.3 A
ID @ TA = 100°C Continuous Drain Current, VGS @ 10V 4.6
IDM Pulsed Drain Current C) 58
PD @TA = 25°C Maximum Power Dissipation 2.5 W
Linear Derating Factor 0.02 WI°C
dv/dt Peak Diode Recovery dv/dt © 7.3 V/ns
T J Operating Junction and -55 to + 150 ''C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
RBJL Junction-to-Drain Lead - 20 'CAN
RSJA Junction-to-Ambient (PCB Mount) © - 50
Notes (O through © are on page 8
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9/21/04
IRF7495PbF
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V Vss = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.10 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 18 22 m9 VGS = 10V, b = 4.4A ©
Vesnh) Gate Threshold Voltage 2.0 - 4.0 V Vos = VGS, lo = 250PA
loss Drain-to-Source Leakage Current - - 20 pA l/ns = 100V, I/ss = 0V
- - 250 Ws = 80V, VGS = 0V, T, = 125°C
less Gate-to-Source Forward Leakage - - 200 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -200 VGS = -20V
Dynamic @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 11 - - S Vos = 25V, ID = 4.4A
Qg Total Gate Charge - 34 51 ID = 4.4A
Qgs Gate-to-Source Charge - 6.3 - nC Vos = 50V
qu Gate-to-Drain ("Miller") Charge - 11.7 - VGS = 10V ©
td(on) Turn-On Delay Time - 8.7 - VDD = 50V
t, Rise Time - 13 - ID = 4.4A
tam) Turn-Off Delay Time - 10 - ns Rs = 6.29
t, Fall Time - 36 - VGS = 10v ©
Ciss Input Capacitance - 1530 - VGS = 0V
Cass Output Capacitance - 250 - Vos = 25V
Crss Reverse Transfer Capacitance - 110 - pF f = 1.0MHz
Cass Output Capacitance - 980 - VGS = 0V, l/os = 1.0V, f = 1.0MHz
Cass Output Capacitance - 160 - Ves = 0V, Ws = 80V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 240 - VGS = 0V, Vos = 0V to 80V s
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 180 mJ
IAR Avalanche Current (D _ 4.4 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 2.3 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 58 integral reverse G
(Body Diode) (D p-n junction diode. S
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, IS = 4.4A, VGS = 0V ©
trr Reverse Recovery Time - 42 - ns TJ = 25°C, IF = 4.4A, VDD = 25V
Qrr Reverse Recovery Charge - 73 - nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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