IRF7495TR ,Leaded 100V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsDSS DS(on) D High frequency DC-DC converters22m @V = 10V100V
IRF7495TR
Leaded 100V Single N-Channel HEXFET Power MOSFET in a SO-8 package
PD - 94683C
International
TOR Rectifier llRF7495
HEXFET© Power MOSFET
Applications Voss RDS(on) max ID
q High frequency DC-DC converters 100V 22mg2@V - 10V 7 3A
GS - .
Benefits
0 Low Gate to Drain Charge to Reduce S LLL1 JJE D
Switching Losses 2 7 '
0 Fully Characterized Capacitance Including Sl ll LT, ll J D
Effective Coss to Simplify Design, (See s E113 CL 6:: D
App. Note AN1001) Grll 4 5 ”:0
q Fully Characterized Avalanche Voltage
and Current Top View SO-8
Absolute Maximum Ratings
Parameter Max. Units
VDs Drain-to-Source Voltage 100 V
l/os Gate-to-Source Voltage * 20
ID © TA = 25°C Continuous Drain Current, Vas @ 10V 7.3 A
ID @ TA = 100°C Continuous Drain Current, Vas @ 10V 4.6
IDM Pulsed Drain Current co 58
PD @TA = 25°C Maximum Power Dissipation 2.5 W
Linear Derating Factor 0.02 W/°C
dv/dt Peak Diode Recovery dv/dt © 7.3 V/ns
T J Operating Junction and -55 to + 150 °C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
ReJL Junction-to-Drain Lead - 20 °C/W
ReJA Junction-to-Ambient (PCB Mount) © - 50
Notes CO through © are on page 8
1
04/12/06
http://www.loq.com/
IRF7495
International
TOR Rectifier
Static © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 -- -- V Vss = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.10 - VPC Reference to 25°C, lo = 1mA
Roswm Static Drain-to-Source On-Resistance - 18 22 m9 Vss = 10V, b = 4.4A ©
Vesuh) Gate Threshold Voltage 2.0 - 4.0 V Vos = Vss, ID = 250pA
loss Drain-to-Source Leakage Current - - 20 pA Vos = 100V, Vss = 0V
- - 250 Vos = 80V, Vas = 0V, T, = 125°C
less Gate-to-Source Forward Leakage - - 200 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -200 Vss = -20V
Dynamic © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 11 - - S Vos = 25V, ID = 4.4A
as, Total Gate Charge - 34 51 ID = 4.4A
Qgs Gate-to-Source Charge - 6.3 - nC Vrrs = 50V
di Gate-to-Drain ("Miller") Charge -- 11.7 -- Vss = 10V G)
td(on) Turn-On Delay Time - 8.7 - VDD = 50V
t, Rise Time - 13 - ID = 4.4A
td(off) Turn-Off Delay Time -- 10 -- ns Rs = 6.29
t, Fall Time - 36 - I/as = 10V ©
Ciss Input Capacitance - 1530 - Vss = ov
Coss Output Capacitance -- 250 -- Vos = 25V
Crss Reverse Transfer Capacitance - 110 - pF f = 1.0MHz
Coss Output Capacitance - 980 - VGS = 0V, l/rs = 1.0V, f = 1.0MHz
Coss Output Capacitance -- 160 -- Veg = 0V, VDs = 80V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 240 - Ves = 0V, Vos = 0V to 80V s
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© _ 180 m J
|AR Avalanche Current (D _ 4.4 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 2.3 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current -- -- 58 integral reverse G
(Body Diode) (D p-n junction diode. S
V30 Diode Forward Voltage - - 1.3 V Tu = 25°C, IS = 4.4A, vas = 0V ©
trr Reverse Recovery Time - 42 - ns TJ = 25°C, IF = 4.4A, VDD = 25V
Qrr Reverse Recovery Charge - 73 - nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
