IRF7493TRPBF ,80V Single N-Channel HEXFET Power MOSFET in a SO-8 packageIRF7493PbFHEXFET Power MOSFET
IRF7494 ,150V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsDSS DS(on) D High frequency DC-DC converters44m
IRF7493TRPBF
80V Single N-Channel HEXFET Power MOSFET in a SO-8 package
PD - 95289
International
TOR Rectifier IRF7493PbF
HEXFET@ Power MOSFET
Applications
0 High frequency DC-DC converters VDSS Rnsion) max 09 (typ.)
o Lead-Free 80V 15mf2@Vss='10V 35nC
Benefits
0 Low Gate-to-Drain Charge to Reduce
Switching Losses
0 Fully Characterized Capacitance Including
Effective Coss to Simplify Design, (See
SED‘ 'EIDD
SD32 H 73310
App. Note AN1001) SE3 "tct-lr, GED
q Fully Characterized Avalanche Voltage G D31“ Lean D
and Current . SO-8
Top View
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 80 V
VGS Gate-to-Source Voltage * 20
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 9_3
ID @ TC = 70°C Continuous Drain Current, VGS @ 10V 7.4 A
'DM Pulsed Drain Current C) 74
PD @Tc = 25°C Maximum Power Dissipation © 2.5 W
PD @Tc = 70°C Maximum Power Dissipation © 1.6
Linear Derating Factor 0.02 W/°C
To Operating Junction and -55 to + 150 °C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
ROJC Junction-to-Lead - 20
ROJA Junction-to-Ambient © _ 50
Notes co through s are on page 9
1
09/21/04
IRF7493PbF
International
TOR Rectifier
Static @ T J = 25''C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 80 - - V VGS = 0V, ID = 250PA
ABVoss/ATJ Breakdown Voltage Temp. Coefhcient - 0.074 - mV/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 11.5 15 mo Vss = 10V, ID = 5.6A ©
Vesan) Gate Threshold Voltage 2.0 - 4.0 V Vos = VGS, b = 250pA
loss Drain-to-Source Leakage Current - - 20 pA Vos = 80V, VGS = 0V
- - 250 Vros = 64V, VGS = 0V, T: = 125°C
less Gate-to-Source Forward Leakage - - 200 nA VGS = 20V
Gate-to-Source Reverse Leakage - - -200 I/ss = -20V
Dynamic @ T, = 25°C (unless otherwise specified)
gts Forward Transconductance 13 - - S Vos = 15V, ID = 5.6A
Qg Total Gate Charge - 35 53 ID = 5.6A
Qgs Gate-to-Source Charge - 5.7 - l/ns = 40V
an Gate-to-Drain Charge - 12 - Vss = 10V
tam) Turn-On Delay Time - 8.3 - VDD = 40V, ©
t, Rise Time - 7.5 - ID = 5.6A
lam) Turn-Off Delay Time - 30 - ns RG = 6.29
tr Fall Time - 12 - VGS = 10V
Ciss Input Capacitance - 1510 - VGS = ov
Coss Output Capacitance - 320 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 130 - f = 1.0MHz
Coss Output Capacitance - 1130 - VGS = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 210 - VGS = 0V, I/os = 64V, f = 1.0MHz
Crss Eff. Effective Output Capacitance - 320 - Vss = 0V, VDS = 0V to 64V s
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 180 mJ
IAR Avalanche Current (D - 5.6 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 9.3 MOSFET symbol o
(Body Diode) A showing the L,-,-:
ISM Pulsed Source Current - - 74 integral reverse a (tLl
(Body Diode) CO p-n junction diode. e
Vsn Diode Forward Voltage - - 1.3 V To = 25°C, Is = 5.6A, VGs = 0V ©
trr Reverse Recovery Time - 37 56 ns T J = 25°C, IF = 5.6A, VDD = 15V
er Reverse Recovery Charge - 52 78 nC di/dt = 100Alps ©
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