IRF7493 ,80V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R maxQg (typ.)DSS DS(on) High frequency DC-DC converters15m@V =10V80V 35nCGSBenefit ..
IRF7493PBF , HEXFET® Power MOSFET
IRF7493TRPBF ,80V Single N-Channel HEXFET Power MOSFET in a SO-8 packageIRF7493PbFHEXFET Power MOSFET
IRF7494 ,150V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsDSS DS(on) D High frequency DC-DC converters44m
IRF7493
80V Single N-Channel HEXFET Power MOSFET in a SO-8 package
PD - 94654B
International
TOR, Rectifier IRF7493
HEXFET© Power MOSFET
Applications
o High frequency DC-DC converters VDSS RDSion) max Qg (typ.)
80V 15mf2@Vss='10V 35nC
Benefits
q Low Gate-to-Drain Charge to Reduce
Switching Lys.es . . 33:1 a D
o Fully Characterized Capacitance Including 33:2 7:1: D
Effective Coss to Simplify Design, (See E1;
App. Note AN1001) 8T3 VTT-D
0 Fully Characterized Avalanche Voltage G _LL4 5LLL D
and Current T . SO-8
op View
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 80 V
VGS Gate-to-Source Voltage i 20
ID @ Tc = 25°C Continuous Drain Current, I/ss @ 10V 9.3
ID @ TC = 70°C Continuous Drain Current, I/ss @ 10V 7.4 A
'DM Pulsed Drain Current T 74
PD @Tc = 25°C Maximum Power Dissipation C) 2.5 W
Po @Tc = 70°C Maximum Power Dissipation © 1.6
Linear Derating Factor 0.02 Wl°C
To Operating Junction and -55 to + 150 ''C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
Rm Junction-to-Lead - 20
RM Junction-to-Ambient C) - 50
Notes C) through 6) are on page 9
1
7/29/03
IRF7493
Static @ T., = 25°C (unless otherwise specified)
International
TOR Rectifier
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 80 - - V VGS = 0V, ID = 250PA
ABVDss/ATJ Breakdown Voltage Temp. Coemcient - 0.074 - mV/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 11.5 15 mf2 Vss = 10V, ID = 5.6A ©
VGS(Ih) Gate Threshold Voltage 2.0 - 4.0 V Vos = Vss, ID = 250PA
loss Drain-to-Source Leakage Current - - 20 pA Vos = 80V, VGS = 0V
- - 250 Vros = 64V, VGS = 0V, T: = 125°C
less Gate-to-Source Forward Leakage - - 200 nA VGS = 20V
Gate-to-Source Reverse Leakage - - -200 VGS = -20V
Dynamic @ To = 25°C (unless otherwise specified)
gts Forward Transconductance 13 - - S Vros = 15V, ID = 5.6A
09 Total Gate Charge - 35 53 ID = 5.6A
Qgs Gate-to-Source Charge - 5.7 - Vos = 40V
di Gate-to-Drain Charge - 12 - Vss = 10V
td(on) Turn-On Delay Time - 8.3 - VDD = 40V, ©
t, Rise Time - 7.5 - ID = 5.6A
td(off) Turn-Off Delay Time - 3O - ns Rs = 6.29
k Fall Time - 12 - VGS = 10V
Ciss Input Capacitance - 1510 - Ves = 0V
Coss Output Capacitance - 320 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 130 - f = 1.0MHz
Coss Output Capacitance - 1130 - VGS = 0V, Vos = 1.0V, f = 1.0MHz
cu, Output Capacitance - 210 - VGS = 0V, I/os = 64V, f = 1.0MHz
Crss eff. Effective Output Capacitance - 320 - Vss = 0V, Vros = 0V to 64V s
Avalanche Characteristics
Parameter Typ. Max. Units
EAs Single Pulse Avalanche Energy© - 180 mJ
IAR Avalanche Current O) - 5.6 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 9.3 MOSFET symbol .
(Body Diode) A showing the - ' i
ISM Pulsed Source Current - - 74 integral reverse :, _ .
(Body Diode) C) p-n junction diode. l
Vso Diode Forward Voltage - - 1.3 V TJ = 25°C, IS = 5.6A, VGS = 0V ©
trr Reverse Recovery Time - 37 56 ns To = 25°C, IF = 5.6A, VDD = 15V
Cr, Reverse Recovery Charge - 52 78 nC di/dt = 100A/ps ©
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