IRF7492TRPBF ,200V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsDSS DS(on) D High frequency DC-DC converters200V 79m@V = 10V 3.7A GS Lead-FreeBenef ..
IRF7493 ,80V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R maxQg (typ.)DSS DS(on) High frequency DC-DC converters15m@V =10V80V 35nCGSBenefit ..
IRF7493PBF , HEXFET® Power MOSFET
IRF7493TRPBF ,80V Single N-Channel HEXFET Power MOSFET in a SO-8 packageIRF7493PbFHEXFET Power MOSFET
IRF7494 ,150V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsDSS DS(on) D High frequency DC-DC converters44m
IRF7492TRPBF
200V Single N-Channel HEXFET Power MOSFET in a SO-8 package
PD - 95287A
International
TOR Rectifier I RF7492 PbF
HEXFET© Power MOSFET
Applications Vnss RDS(on) max ID
q High frequency DC-DC converters 200V 79mf2@Vtas = 10V 3.7A
0 Lead-Free
Benefits
. Pt Gate to Drain Charge to Reduce s E1 , 53]: D
Switching Losses
. . . s CIIZ H 7313 D
. Fully Characterized Capacitance Including V
Effective Cogs to Simplify Design, (See s CE:8 6:3: D
App. Note AN1001) GEE: 53130
q Fully Characterized Avalanche Voltage
and Current Top View SO-8
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-Source Voltage 200 V
Vss Gate-to-Source Voltage 1 20 V
ID @ TA = 25°C Continuous Drain Current, Vas © 10V 3.7
ID @ TA = 70°C Continuous Drain Current, Vas @ 10V 3.0 A
IDM Pulsed Drain Current (D 30
Po @TA = 25°C Power Dissipation) 2.5 W
Linear Derating Factor 0.02 W/°C
dv/dt Peak Diode Recovery dv/dt © 9.5 V/ns
To Operating Junction and -55 to + 150
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Symbol Parameter Typ. Max. Units
ROJL Junction-to-Drain Lead - 20 00M,
ReJA Junction-to-Ambient © - 50
Notes co through © are on page 8
1
02/23/07
IRF7492PbF
International
TOR Rectifier
Static © Tg = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BV(BR)Dss Drain-to-Source Breakdown Voltage 200 - - V VGS = 0V, ID = 250PA
AV(BR)DS$/ATJ Breakdown Voltage Temp. Coefficient - 0.20 - V/°C Reference to 25°C, ID = 1mA ©
Roswn) Static Drain-to-Source On-Resistance 64 79 m9 Vas = 10V, ID = 2.2A ©
VGS(1h) Gate Threshold Voltage 2.5 - - V Vos = I/ss, ID = 250pA
loss Drain-to-Source Leakage Current - - 10 PA Vos = 160V, l/ss = 0V
- - 250 Vos = 160V, Vss = 0V, To = 125°C
less Gate-to-Source Forward Leakage - - 100 n A Vss = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
Dynamic @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 7.9 - - S VDS = 50V, ID = 3.7A
09 Total Gate Charge - 39 59 ID = 2.2A
Qgs Gate-to-Source Charge - 9.2 - nC Vos = 100V
di Gate-to-Drain ("Miller") Charge - 15 - Vss = 10V
td(on) Turn-On Delay Time - 15 - l/oo = 100V
t, Rise Time - 13 - ns ID = 2.2A
td(off) Turn-Off Delay Time - 27 - Rs = 6.59
if Fall Time - 14 - Vas = 10V ©
Ciss Input Capacitance - 1820 - Vas = 0V
Coss Output Capacitance - 190 - Vos = 25V
Crss Reverse Transfer Capacitance - 94 - pF f = 1.0MHz
Coss Output Capacitance - 780 - l/ss = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 89 - Vss = 0V, VDs = 160V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 150 - Vas = 0V, VDs = 0V to 160V s
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 130 mJ
IAR Avalanche CurrentCD - 4.4 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - _ 2 3 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) co - - 30 p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, ls = 2.2A, VGS = 0V ©
trr Reverse Recovery Time - 69 100 ns Tu = 25°C, IF = 2.2A
arr Reverse RecoveryCharge - 200 310 nC di/dt = 1OOA/ps ©
2
