IRF7491TRPBF ,80V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) D High frequency DC-DC converters80V 16m
IRF7491TRPBF
80V Single N-Channel HEXFET Power MOSFET in a SO-8 package
International
zaRRyctifier
PD - 95285
IRF7491PbF
HEXFETO Power MOSFET
Applications Voss RDS(on) max ID
q High frequency DC-DC converters
o Lead-Free 80V 16mf2@Vss = 10V 9.7A
Benefits
o Pt Gate to Drain Charge to Reduce s CI ' 533: D
Switching Losses
. . . s CH: H 73]: D
o Fully Characterized Capacitance Including (tf
Effective Coss to Simplify Design, (See s D: 6311 D
App. Note AN1001) GD: JED
o Fully Characterized Avalanche Voltage
and Current Top View SO-8
Absolute Maximum Ratings
Parameter Max. Units
Vros Drain-to-Source Voltage 80 V
VGs Gate-to-Source Voltage i 20
ID @ TA = 25°C Continuous Drain Current, Vss @ 10V 9.7©
ID @ TA = 100°C Continuous Drain Current, VGS @ 10V 6.1 A
IDM Pulsed Drain Current (D 77
PD @TA = 25°C Maximum Power Dissipation 2.5 W
Linear Deratinq Factor 0.02 W/°C
dv/dt Peak Diode Recovery dv/dt © 4.4 V/ns
Tu Operating Junction and -55 to + 150 ''C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
ROJL Junction-to-Drain Lead - 20 "C/W
ROJA Junction-to-Ambient (PCB Mount) * - 50
Notes (O through © are on page 8
09/16/04
IRF7491PbF
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 80 - - V VGS = 0V, ID = 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.08 - V/°C Reference to 25''C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 14 16 mg I/ss = 10V, b = 5.8A ©
VGS(th) Gate Threshold Voltage 3.5 - 5.5 V Vos = VGS, ID = 250pA
loss Drain-to-Source Leakage Current - - 1.0 pA Ws = 64V, Vss = 0V
- - 250 Vos = 64V, VGS = 0V, TJ = 125''C
less Gate-to-Source Forward Leakage - - 100 nA I/cs = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
Dynamic © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 9.6 - - S Vos = 25V, ID = 5.8A
q, Total Gate Charge - 51 76 ID = 5.8A
Qgs Gate-to-Source Charge - 18 - nC Vos = 40V
di Gate-to-Drain ("Miller") Charge - 18 - VGS = 10V ©
td(on) Turn-On Delay Time - 22 - VDD = 40V
t, Rise Time - 19 - ID = 5.8A
tu(om Turn-Off Delay Time - 32 - ns Rs = 6.29
tr Fall Time - IO - VGS = 10V ©
Ciss Input Capacitance - 2940 - VGS = 0V
Coss Output Capacitance - 290 - Ws = 25V
Crss Reverse Transfer Capacitance - 160 - pF f = 1.0MHz
Coss Output Capacitance - 980 - VGS = 0V, Ws = 1.0V, f = 1.0MHz
Coss Output Capacitance - 210 - I/ss = 0V, Vos = 64V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 310 - Vss = 0V, Vos = 0V to 64V ©
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy©© - 130 mJ
IAR Avalanche Current CD - 5.8 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 9.7 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 77 integral reverse G
(Body Diode) C)6) p-njunction diode. S
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, Is = 5.8A, VGS = 0V ©
trr Reverse Recovery Time - 47 - ns T: = 25°C, IF = 5.8A, VDD = 25V
G, Reverse Recovery Charge - 110 - nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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