IRF7490TRPBF ,100V Single N-Channel HEXFET Power MOSFET in a SO-8 package IRF7490PbFHEXFET Power MOSFET
IRF7490TRPBF ,100V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplications High frequency DC-DC convertersV R max QDSS DS(on) g Lead-Free100V 39m@V =10V 37nCG ..
IRF7491 ,80V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplications V R max IDSS DS(on) D High frequency DC-DC convertersΩ80V 16m @V = 10V 9.7AGSBenefitsA ..
IRF7491 ,80V Single N-Channel HEXFET Power MOSFET in a SO-8 packagePD - 94537IRF7491®HEXFET Power MOSFET
IRF7491TRPBF ,80V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) D High frequency DC-DC converters80V 16m
IRF7490TRPBF
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package
PD - 95284
International
TOR Rectifier IRF7490PbF
HEXFET@ Power MOSFET
Applications
0 High frequency DC-DC converters Voss RDS(on) max th
q Lead-Free 100V 39mQ@VGS=10V 37nC
Benefits
o Low Gate-to-Drain Charge to Reduce
Switching Lossgs . . s E1 ' HE D
0 Fully Characterized Capacitance Including
. . . . s D12 H 7-Irln D
Effective Coss to Simplify Design, (See m
App. Note AN1001) SDI” GED
q Fully Characterized Avalanche Voltage G cm‘ 53:: D
and Current -
Top View so 8
Absolute Maximum Ratings
Symbol Parameter Max. Units
VDS Drain-Source Voltage 100 V
VGS Gate-to-Source Voltage 1 20
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 5.4
In @ TA = 70''C Continuous Drain Current, VGS @ 10V 4.3 A
IDM Pulsed Drain Currents 43
Pro @TA = 25°C Maximum Power Dissipation 2.5 W
PD @TA = 70°C Maximum Power Dissipation 1.6
Linear Derating Factor 20 mW/°C
TJ Operating Junction and -55 to + 150 ''C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Symbol Parameter Typ. Max. Units
Rox Junction-to-Drain Lead - 20
ReJA Junction-to-Ambient © - 50 °C/W
Notes OD through GD are on page 9
1
09/ 1 5/04
IRF7490PbF
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V N/ss = 0V, ID = 250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coemcient - 0.11 - 1//''C Reference to 25°C, ID = 1mA ©
RDS(on) Static Drain-to-Source On-Resistance - 33 39 mf2 VGs = 10V, ID = 3.2A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos = VGS, ID = 250pA
loss Drain-to-Source Leakage Current - - 20 pA Vos = 100V, VGS = 0V
- - 250 VDs = 80V, Vss = 0V, To = 125°C
less Gate-to-Source Forward Leakage - - 200 n A N/ss = 20V
Gate-to-Source Reverse Leakage - - -200 VGs = -20V
Dynamic @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
9ts Forward Transconductance 8.0 - - S Vros = 50V, ID = 3.2A
% Total Gate Charge - 37 56 ID = 3.2A
Qgs Gate-to-Source Charge - 8.0 nC Vos = 50V
di Gate-to-Drain ("Miller") Charge - 10 VGS = 10V,
td(on) Turn-On Delay Time - 13 - VDD = 100V
tr Rise Time - 4.2 - ns ID = 3.2A
tu(oit) Turn-Off Delay Time - 51 - Rs = 9.19
tf Fall Time - 11 - VGs = 10V ©
Ciss Input Capacitance - 1720 - VGs = 0V
Coss Output Capacitance - 220 - Vos = 25V
Crss Reverse Transfer Capacitance - 25 - pF f = 1.0MHz
Coss Output Capacitance - 1650 - N/ss = 0V, Vros = 1.0V, f = 1.0MHz
Coss Output Capacitance - 130 - N/ss = 0V, Vros = 80V, f = 1.0MHz
Cass eff. Effective Output Capacitance - 250 - VGs = 0V, Vos = 0V to 80V ©
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 91 mJ
IAR Avalanche CurrentCD - 3.2 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current _ _ 2.3 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) co - - 43 p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, Is = 3.2A, VGS = 0V ©
trr Reverse Recovery Time - 67 100 ns TJ = 25°C, IF = 3.2A
Qrr Reverse RecoveryCharge - 220 330 nC di/dt = 100Alps ©
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