IRF7488 ,80V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplications High frequency DC-DC converters V R max QDSS DS(on) g80V 29m@V =10V 38nCGSBenefits ..
IRF7488 ,80V Single N-Channel HEXFET Power MOSFET in a SO-8 package IRF7488HEXFET Power MOSFET
IRF7488TR ,80V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplications High frequency DC-DC converters V R max QDSS DS(on) g80V 29m@V =10V 38nCGSBenefits ..
IRF7488TRPBF ,80V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max QDSS DS(on) g High frequency DC-DC converters80V 29m@V =10V 38nCGS Lead-Free ..
IRF7490PBF , HEXFET Power MOSFET
IRF7490TRPBF ,100V Single N-Channel HEXFET Power MOSFET in a SO-8 package IRF7490PbFHEXFET Power MOSFET
ISL36411DRZ-T7 , Quad Lane Extender
ISL3680IR , Direct Conversion Transceiver
ISL3684 , Direct Down Conversion Transceiver
ISL3684 , Direct Down Conversion Transceiver
ISL3685 , 2.4GHz RF/IF Converter and Synthesizer
ISL3690IR ,Dual Band Direct Conversion TransceiverSYNTH_VDDSYNTH_GNDCP_GNDCP_DOCP_VDDCLKREF_INQLO_GND_2LO_IN-LO_IN+QLO_GNDQLO_VCCTX_BB_GNDTX_BB_VCCTX ..
IRF7488-IRF7488TR
80V Single N-Channel HEXFET Power MOSFET in a SO-8 package
International
:raRliUctifier
PD - 94507
IRF7488
HEXFET@ Power MOSFET
Applications
o High frequency DC-DC converters VDSS RDS(on) max th,
80V 29mf2@Vss=10V 38nC
Benefits
. Low Gate-to-Drain Charge to Reduce
Switching Losses 1 a
. . . s UE ' IIE D
. Fully Characterized Capacitance Including 2 7
Effective Coss to Simplify Design, (See s DI 'r, E D
App. Note AN1001) 35:3 GED
0 Fully Characterized Avalanche Voltage G 5:4 5333 D
and Current
Top View SO-8
Absolute Maximum Ratings
Symbol Parameter Max. Units
VDs Drain-Source Voltage 80 V
VGS Gate-to-Source Voltage i 20
ID @ TA = 25°C Continuous Drain Current, VGs @ 10V 6.3
In @ TA = 70°C Continuous Drain Current, VGs @ 10V 5.0 A
IDM Pulsed Drain Currents 50
Pro @TA = 25''C Maximum Power Dissipation 2.5 W
PD @TA = 70°C Maximum Power Dissipation 1.6
Linear Derating Factor 20 mWf'C
TJ Operating Junction and -55 to + 150 °C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Symbol Parameter Typ. Max. Units
' Junction-to-Drain Lead - 20
ReJA Junction-to-Ambient © - 50 °C/W
Notes OD through GD are on page 9
1
9/23/02
IRF7488
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 80 - - V N/ss = 0V, ID = 250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coemcient - 0.089 - V/°C Reference to 25°C, ID = 1mA ©
RDS(on) Static Drain-to-Source On-Resistance - 24 29 mf2 VGs = 10V, ID = 3.8A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos = VGS, ID = 250pA
loss Drain-to-Source Leakage Current - - 20 pA Vos = 80V, VGS = 0V
- - 250 N/ns = 64V, Vss = 0V, To = 125°C
less Gate-to-Source Forward Leakage - - 200 n A N/ss = 20V
Gate-to-Source Reverse Leakage - - -200 VGs = -20V
Dynamic @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
9ts Forward Transconductance 9.3 - - S Vros = 15V, ID = 3.8A
% Total Gate Charge - 38 57 ID = 3.8A
Qgs Gate-to-Source Charge - 9.1 nC Vos = 40V
di Gate-to-Drain ("Miller") Charge - 12 VGS = 10V,
td(on) Turn-On Delay Time - 13 - VDD = 40V
tr Rise Time - 12 - ns ID = 3.8A
tu(oit) Turn-Off Delay Time - 44 - Rs = 9.19
tf Fall Time - 16 - VGS = 10V ©
Ciss Input Capacitance - 1680 - VGs = 0V
Coss Output Capacitance - 270 - Vos = 25V
Crss Reverse Transfer Capacitance - 32 - pF f = 1.0MHz
Coss Output Capacitance - 1760 - N/ss = 0V, Vros = 1.0V, f = 1.0MHz
Cass Output Capacitance - 170 - N/ss = 0V, Vros = 64V, f = 1.0MHz
Cass eff. Effective Output Capacitance - 340 - VGs = 0V, Vos = 0V to 64V ©
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 96 mJ
IAR Avalanche CurrentCD - 3.8 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 2.3 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) Ci) - - 50 p-n junction diode. s
Vw Diode Forward Voltage - - 1.3 V T: = 25°C, Is = 3.8A, VGS = 0V ©
trr Reverse Recovery Time - 65 98 ns TI, = 25°C, IF = 3.8A
Qrr Reverse RecoveryCharge - 190 290 nC di/dt = 100A/ps ©
2
