IRF7484QTRPBF ,40V Single N-Channel HEXFET Power MOSFET in a SO-8 packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRF7484QTRPBF ,40V Single N-Channel HEXFET Power MOSFET in a SO-8 package IRF7484QPbFBenefits®HEXFET Power MOSFET
IRF7484QTRPBF
40V Single N-Channel HEXFET Power MOSFET in a SO-8 package
PD - 96167A
IRF7484CIPbF
International
TOR Rectifier
Benefits HEXFET® Power MOSFET
o Advanced Process Technology
q Ultra Py (P-Resistance VDSS RDS(on) max (mg) In
q Fast Switching
o Repetitive Avalanche Allowed up to Tjmax 40V 10 @ VGS = 7.0V 14A
q Lead-Free
o RoHS Compliant (Halogen Free)
Description D
This Stripe Planar design of HEXFETO Power 71]]: D
MOSFETs utilizes the latest processing techniques to 6
achieve extremely low on-resistance per silicon area. DE D
Additional features of this HEXFET power MOSFET 5
are a 150°C junction operating temperature, fast CED D
switching speed and impr.oyed repe.tith/e. avalanche . SO-8
rating. These benefits combine to make this design an Top View
extremely efficient and reliable device for use in a wide
variety of applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, Vas @ 10V 14
ID © TA = 70°C Continuous Drain Current, Vas © 10V 11 A
IDM Pulsed Drain Current (D 110
PD @TA = 25°C Power Dissipation® 2.5 W
Linear Derating Factor 0.02 W/°C
Vas Gate-to-Source Voltage 1 8.0 V
EAS Single Pulse Avalanche Energy© 230 m]
IAR Avalanche Currents See Fig.16c, 16d, 19, 20 A
EAR Repetitive Avalanche Energy© mJ
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Symbol Parameter Typ. Max. Units
FU. Junction-to-Drain Lead - 20
ReJA Junction-to-Ambient G) - 50 "C/W
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IRF7484QPbF International
TOR Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 40 - - V Vas = 0V, ID = 250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coefficient - 0.040 - V/°C Reference to 25°C, ID = 1 mA
RDS(on) Static Drain-to-Source On-Resistance - - 10 m9 Vss = 7.0V, lo = 14A ©
VGS(th) Gate Threshold Voltage 1.0 - 2.0 V Ihos = Vas, ID = 250pA
gfs Forward Transconductance 4O - - S VDs = 10V, ID = 14A
bss Drain-to-Source Leakage Current - - 2O pA VDS = 40V, VGS = 0V
- - 250 VDs = 32V, Vas = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage - - 200 n A Vas = 8.0V
Gate-to-Source Reverse Leakage - - -200 Vas = -8.0V
% Total Gate Charge - 69 100 ID = 14A
Qgs Gate-to-Source Charge - 9.0 - nC Vos = 32V
di Gate-to-Drain ("Miller") Charge - 16 - l/ss = 7.0V
tdwn) Turn-On Delay Time - 9.3 - VDD = 20V ©
tr Rise Time - 5.0 - ns ID = 1.0A
td(oti) Turn-Off Delay Time - 180 - Rs = 6.29
tt Fall Time - 58 - VGS = 7.0V
Ciss Input Capacitance - 3520 - Vas = 0V
Coss Output Capacitance - 660 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 76 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 2 3 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current - - 1 IO integral reverse s
(Body Diode) OD p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V T, = 25°C, Is = 2.3A, Vas = 0V ©
trr Reverse Recovery Time - 59 89 ns TI, = 25°C, Ir = 2.3A
Qrr Reverse Recovery Charge - 110 170 nC di/dt = 100A/ps ©
Notes:
co Repetitive rating; pulse width limited by s ISDS 14A, di/dt f 140A/ps, VDD f V(BR)Dss,
max. junction temperature. T, 5 150°C.
© Pulse width f 400ps; duty cycle C 2%. © Limited by TJmax , see Fig.16c, 16d, 19, 20 for typical repetitive
© Surface mounted on 1 in square Cu board. avalanche performance.
© Starting TJ = 25°C, L = 2.3mH, Ra = 259,
IAS-- 14A. (See Figure 12).
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