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IRF7478QTRPBF
60V Single N-Channel HEXFET Power MOSFET in a SO-8 package
END OF LIFE PD- 96128B
International
TOR Rectifier IRF7478ClPbF
. Advanced Process Technology HEXFET© Power MOSFET
. Ultra Low On-Resistance
. N Channel MOSFET
. Surface Mount Voss RDSW") max (mQ) ID
. Available in Tape & Reel 60V 26@Vss = 10V 4.2A
. 150°C OperatingTemperature 30@VGs = 4.5V 3.5A
. Lead-Free
Description
These HEXFET Power MOSFET's are a 150°C s nc-l ' 833: D
junction operating temperature, fast switching 2 7
speed and improved repetitive avalanche rating. s DD H 313 D
These benefits combine to make this design an mg lf 61::
extremely efficientand reliable device for use in a S D
wide variety of applications. G D134 53]] D
The efficient SO-8 package provides enhanced
thermal characteristics making it ideal in a variety . SO-8
of power applications. This surface mount SO-8 Top View
can dramatically reduce board space and is also
available in Tape & Reel.
Package Standard Pack EOL
Base part number Orderable part number Type Form Quantity Notice Replacement Part Number
IRF7478QPhF IRF7478QTHPbF SCH! Tape and Reel 4000 EOL 529 Please search the EOL D” number on IR's website for
IRF7478QPbF sows Tube 95 EOL 529 gueiaate
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, Vas @ 10V 7.0
ID @ TA = 70°C Continuous Drain Current, Vas @ 10V 5.6 A
IDM Pulsed Drain Current (D 56
Pg @TA = 25°C Power Dissipation© 2.5 W
Linear Derating Factor 0.02 W/°C
VGS Gate-to-Source Voltage 1 20 V
dv/dt Peak Diode Recovery dv/dt © 3.7 V/ns
To Operating Junction and -55 to + 150
Tsms Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Symbol Parameter Typ. Max. Units
Rau Junction-to-Drain Lead - 20
ReJA Junction-to-Ambient GD - 50 °C/W
Notes co through © are on page 8
1
06/27/1 4
END OF LIFE
IRF7478QPbF International
TOR Rectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(Bmpss Drain-to-Source Breakdown Voltage 60 - - V Veg = 0V, ID = 250pA
M(BmDSS/ATJ Breakdown Voltage Temp. Coefficient - 0.065 - V/°C Reference to 25°C, lo = 1mA
RDS(on) Static Drain-to-Source On-Resistance : :2 ii', mn ti,', : 4fs'hf,:',.it 'ii,
Vegan) Gate Threshold Voltage 1.0 - 3.0 V Vros = Vas, ID = 250uA
loss Drain-to-Source Leakage Current - - 20 pA Vos = 48V, Vas = 0V
- - 100 Vos = 48V, Vas = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vas = 20V
Gate-to-Source Reverse Leakage - - -100 I/ss = -20V
Dynamic tii) To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 17 - - S Vos = 50V, ID = 4.2A
09 Total Gate Charge - 21 31 lo = 4.2A
Qgs Gate-to-Source Charge - 4.3 - nC Vos = 48V
di Gate-to-Drain ("Miller") Charge - 9.6 - Vss = 4.5V
td(on) Turn-On Delay Time - 7.7 - VDD = 30V
tr Rise Time - 2.6 - ns ID = 4.2A
td(off) Turn-Off Delay Time - 44 - Rs = 6.29
tt Fall Time - 13 - Vas = 10V ©
Ciss Input Capacitance - 1740 - VGS = 0V
Coss Output Capacitance - 300 - Vros = 25V
Crss Reverse Transfer Capacitance - 37 - pF f = 1.0MHz
Cass Output Capacitance - 1590 - VGs = 0V, VDS = 1.0V, f = 1.0MHz
Coss Output Capacitance - 220 - l/ss = 0V, VDs = 48V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 410 - l/ss = 0V, VDS = 0V to 48V ©
Symbol Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 140 mJ
IAR Avalanche CurrentCD - 4.2 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 2.3 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - _ 56 integral reverse G
(Body Diode) (D p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, Is = 4.2A, l/ss = 0V ©
trr Reverse Recovery Time - 52 78 ns Tu = 25°C, IF = 4.2A
a,, Reverse RecoveryCharge - 100 150 no di/dt = 1OOA/ps ©
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