IRF7478 ,60V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max (mΩ) Ω) Ω) Ω) Ω) IDSS DS(on) Dl High frequency DC-DC converters60V 26@V = 10V 4 ..
IRF7478 ,60V Single N-Channel HEXFET Power MOSFET in a SO-8 packagePD- 94055AIRF7478SMPS MOSFET®HEXFET Power MOSFET
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IRF7478
60V Single N-Channel HEXFET Power MOSFET in a SO-8 package
International
TOR Rectifier
SMPS MOSFET
94055A
IRF7478
HEXFET© Power MOSFET
Applications V R
. DSS DS(on) max (mf2) ID
o Hi h fre uenc DC-DC converters
g q y 60V 26@Vss = 10V 4.2A
30@VGs = 4.5V 3.5A
Benefits
o Low Gate to Drain Charge to Reduce S m1 8311 D
Switching Losses s E2 H 7313 D
o Fully Characterized Capacitance Including 3 Tf 6
. . . . s CED II: D
Effective Coss to Simplify Design, (See
App. Note AN1001) GEE" 53130
e Fully Characterized Avalanche Voltage
Top View SO-8
and Current
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 7.0
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 5.6 A
G, Pulsed Drain Current C) 56
PD @TA = 25°C Power Dissipation© 2.5 W
Linear Derating Factor 0.02 W/°C
VGS Gate-to-Source Voltage l 20 V
dv/dt Peak Diode Recovery dv/dt co 3.7 V/ns
To Operating Junction and -55 to + 150
TSTG Storage Temperature Range t
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Symbol Parameter Typ. Max. Units
Raur, Junction-to-Drain Lead - 20
ReJA Junction-to-Ambient © - 50 °CNV
Notes co through © are on page 8
1
3/13/01
IRF7478 International
TOR Rectifier
Static @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 60 - - V VGs = 0V, ID = 250pA
AV(BR)Dss/ATo Breakdown Voltage Temp. Coemcient - 0.065 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - :2 ii', mn "it: 12(,'f,C,ft 'i,
VGS(th) Gate Threshold Voltage 1.0 - 3.0 V Vros = VGs, ID = 250pA
loss Drain-to-Source Leakage Current - - 20 pA Vos = 48V, VGS = 0V
- - 100 Vos = 48V, Vss = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage - - 100 nA VGS = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
Dynamic © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 17 - - S Vos = 50V, ID = 4.2A
% Total Gate Charge - 21 31 lo = 4.2A
Q95 Gate-to-Source Charge - 4.3 - nC Vos = 48V
di Gate-to-Drain ("Miller") Charge - 9.6 - VGS = 4.5V
tam) Turn-On Delay Time - 7.7 - I/no = 30V
tr Rise Time - 2.6 - ns ID = 4.2A
tdmff) Turn-Off Delay Time - 44 - Rs = 6.29
tf Fall Time - 13 - VGs = 10V ©
Ciss Input Capacitance - 1740 - VGS = 0V
Coss Output Capacitance - 300 - N/ns = 25V
Crss Reverse Transfer Capacitance - 37 - pF f = 1.0MHz
Cass Output Capacitance - 1590 - VGs = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 220 - VGS = 0V, Vos = 48V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 410 - VGS = 0V, l/DS = 0V to 48V s
Symbol Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 140 mJ
IAR Avalanche CurrentC) - 4.2 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 2.3 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current _ - 56 integral reverse G
(Body Diode) (D p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, Is = 4.2A, VGS = 0V ©
trr Reverse Recovery Time - 52 78 ns T: = 25°C, IF = 4.2A
Qrr Reverse RecoveryCharge - 100 150 nC di/dt = 100A/ps ©
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