IRF7477TR ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max (mΩ) Ω) Ω) Ω) Ω) IDSS DS(on) Dl High Frequency Synchronous Buck30V 8.5@V = 10V ..
IRF7477TRPBF ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageIRF7477PbFSMPS MOSFETHEXFET Power MOSFET
IRF7477TRPBF ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplications High Frequency Synchronous BuckV R max (m IDSS DS(on) D Converters for Computers ..
IRF7478 ,60V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max (mΩ) Ω) Ω) Ω) Ω) IDSS DS(on) Dl High frequency DC-DC converters60V 26@V = 10V 4 ..
IRF7478 ,60V Single N-Channel HEXFET Power MOSFET in a SO-8 packagePD- 94055AIRF7478SMPS MOSFET®HEXFET Power MOSFET
IRF7478QTRPBF ,60V Single N-Channel HEXFET Power MOSFET in a SO-8 packageapplications. This surface mount SO-8can dramatically reduce board space and is alsoavailable in T ..
ISL3283EIHZ-T , ±16.5kV ESD Protected, 125°C, 3.0V to 5.5V, SOT-23/TDFN Packaged, 20Mbps, Full Fail-safe, Low Power, RS-485/RS-422 Receivers
ISL34340 ,WSVGA 24-Bit Long-Reach Video SERDES with Bidirectional Side-ChannelBlock DiagramSCL2I CSDAVCMGENERATORRAM SERIOPPRE-TXEMPHASIS3V/H/DESERIONMUXTDM 8b/10bDEMUXRGB24RX E ..
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ISL3680IR , Direct Conversion Transceiver
ISL3684 , Direct Down Conversion Transceiver
IRF7477-IRF7477TR
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
International
TOR Rectifier
SMPS MOSFET
PD- 94094A
IRF7477
HEXFET© Power MOSFET
A lications
p: h F S h B k Voss RDS(on) max (mn) ID
0 C lg requfencg ync I'OHOUS UC 30V 8.5@Vss = 10V 14A
onverter.s f." omputers and 10@Vss = 4.5V 11A
Communications
Benefits
0 Ultra-Low Gate Impedance 1 a
s D: ' = D
. Very Low Rosmn) S m2 7113 D f.ftits
. Fully Characterized Avalanche Voltage E: Ji'i,ijiiit'''
and Current s LIE SID D J
0 Low Charge Ratio to Eliminate False Turn G DI‘ hmn D
On in Hi h Fre uenc Circuits -
g q y Top View SO 8
Absolute Maximum Ratings
Symbol Parameter Max. Units
Vos Drain-Source Voltage 30 V
VGS Gate-to-Source Voltage i 20 V
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 14
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 11 A
IDM Pulsed Drain Current0) 110
Po @TA = 25°C Maximum Power Dissipation 2.5 W
Pro @TA = 70°C Maximum Power Dissipation@ 1.6 W
Linear Derating Factor 0.02 mW/°C
TJ , TSTG Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Symbol Parameter Typ. Max. Units
' Junction-to-Drain Lead - 20
RNA Junction-to-Ambient © - 50 °C/W
Notes C) through © are on page 8
1
6/26/01
IRF7477 International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V VGS = 0V, ID = 250PA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coemcient - 0.029 - V/°C Reference to 25°C, ID = 1mA
RDs(on) Static Drain-to-Source On-Resistance - 6.5 8.5 mn I/ss = 10V, ID = 14A ©
- 7.7 10 V95 = 4.5V, ID =11A ©
Vesm.) Gate Threshold Voltage 1.0 - 2.5 V Vos = Was, ID = 250pA
loss Drain-to-Source Leakage Current : : 12000 pA VS: , :2V V: , tf, TJ = 125°C
less Gate-to-Source Forward Leakage - - 200 n A VGS = 16V
Gate-to-Source Reverse Leakage - - -200 VGs = -16V
Dynamic @ T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 35 - - S Vos = 15V, ID = 11A
% Total Gate Charge - 25 38 ID = 11A
095 Gate-to-Source Charge - 6.5 - nC Vos = 15V
qu Gate-to-Drain ("Miller") Charge - 8.2 - VGs = 4.5V
Qoss Output Gate Charge - 30 - VGS = 0V, Vros = 15V
td(on) Turn-On Delay Time - 12 - VDD = 15V
tr Rise Time - 9.8 - ns ID = 11A
td(ott) Turn-Off Delay Time - 19 - Rs = 1.89
t, Fall Time - 5.9 - VGs = 4.5V ©
Ciss Input Capacitance - 2710 - VGS = 0V
Coss Output Capacitance - 1120 - N/ns = 15V
Crss Reverse Transfer Capacitance - 100 - pF f = 1.0MHz
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 500 mJ
IAR Avalanche Current© - 8.2 A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 2 3 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current - - 110 integral reverse G
(Body Diode) (D p-n junction diode. s
Vso Diode Forward Voltage - 0.80 1.3 V T: = 25°C, ls = 11A, N/ss = 0V ©
- 0.65 - To =125°C, Is =11A,VGS = 0V ©
trr Reverse Recovery Time - 91 140 ns To = 25°C, IF = 11A, VR=15V
Qrr Reverse Recovery Charge - 130 200 nC di/dt = 100Alps ©
trr Reverse Recovery Time - 90 140 ns TJ = 125°C, IF = 11A, VR=15V
Qrr Reverse Recovery Charge - 140 210 nC di/dt = 100A/ps ©
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