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IRF7476
12V Single N-Channel HEXFET Power MOSFET in a SO-8 package
PD - 94311
International
TOR Rectifier IRF7476
HEXFETO Power MOSFET
Applications
0 High Frequency 3.3V and 5V input Point-
of-Load Synchronous Buck Converters for
Netcom and Computing Applications.
0 Power Management for Netcom,
VDss RDS(on) max ID
12V 8.0mf2@Vas = 4.5V 15A
Computing and Portable Applications. s E1 ' BED
s E2 H 7113 D
Benefits S 3:3 l SE D
o Ultra-Low Gate Impedance 4 5
G = mn D
0 Very Low RDS(on)
0 Fully Characterized Avalanche Voltage Top View SO-8
and Current
Absolute Maximum Ratings
Symbol Parameter Max. Units
Vos Drain-Source Voltage 12 V
Vss Gate-to-Source Voltage t12 V
In @ TA = 25''C Continuous Drain Current, VGS @ 10V 15
ID @ TA = 70''C Continuous Drain Current, VGS @ 10V 12 A
IDM Pulsed Drain CurrentC) 120
Po @TA = 25°C Maximum Power Dissipation 2.5 W
Po @TA = 70''C Maximum Power Dissipation© 1.6 W
Linear Derating Factor 0.02 W/°C
To, TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Symbol Parameter Typ. Max. Units
Ron, Junction-to-Drain Lead - 20
RNA Junction-to-Ambient G) - 50 ''C/W
Notes C) through © are on page 8
1
04/29/02
IRF7476
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 12 - - V VGS = 0V, lo = 250pA
AV(BR)ross/ATO Breakdown Voltage Temp. Coefficient - 0.014 - V/°C Reference to 25''C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 6.0 8.0 mn VGS = AEN, ID = 15A ©
- 12 30 VGS = 2.8V, ID = 12A ©
VGS(th) Gate Threshold Voltage 0.6 - 1.9 V I/os = Was, ID = 250PA
loss Drain-to-Source Leakage Current - - 100 pA Vros = 9.6V, VGS = 0V
- - 250 Vos = 9.6V, VGS = 0V, To = 125°C
less Gate-to-Source Forward Leakage - - 200 n A VGs = 12V
Gate-to-Source Reverse Leakage - - -200 VGS = -12V
Dynamic @ T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 31 - - S Vros = 6.0V, ID = 12A
% Total Gate Charge - 26 40 ID = 12A
Qgs Gate-to-Source Charge - 4.6 - nC VDs = 10V
qu Gate-to-Drain ("Miller") Charge - 11 - VGS = 4.5V
Qoss Output Gate Charge - 17 - VGS = 0V, l/DS = 5.0V
tdmn) Turn-On Delay Time - 11 - VDD = 6.0V
tr Rise Time - 29 - ns ID = 12A
td(off) Turn-Off Delay Time - 19 - Rs = 1.89
tr Fall Time - 8.3 - VGs = 4.5V ©
Ciss Input Capacitance - 2550 - VGS = 0V
Coss Output Capacitance - 2190 - Vos = 6.0V
Crss Reverse Transfer Capacitance - 450 - pF f = 1.0MHz
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 160 mJ
IAR Avalanche Current(0 - 12 A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current _ - 2 5 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) C) - - 120 p-n junction diode. s
Vso Diode Forward Voltage - 0.87 1.2 v To = 25°C, ls =12A,Vcs = 0v ©
- 0.73 - To =125°C, ls =12A,VGS = ov ©
trr Reverse Recovery Time - 55 82 ns To = 25°C, IF = 12A, VR=12V
Qrr Reverse Recovery Charge - 59 89 nC di/dt = 100Alps ©
trr Reverse Recovery Time - 54 81 ns To = 125°C, IF = 12A, VR=12V
Qrr Reverse Recovery Charge - 60 90 nC di/dt = 100A/ps ©
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