IRF7473TRPBF ,100V Single N-Channel HEXFET Power MOSFET in a SO-8 packageIRF7473PbFHEXFET Power MOSFET
IRF7473TRPBF ,100V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplications Telecom and Data-Com 24 and 48VV R max I input DC-DC convertersDSS DS(on) D Moto ..
IRF7474 ,100V Single N-Channel HEXFET Power MOSFET in a SO-8 packagePD- 94097IRF7474®HEXFET Power MOSFET
IRF7474TR ,100V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) Dl Telecom and Data-Com 24 and 48V100V 63mΩ Ω Ω Ω Ω@V = 10V 4.5A G ..
IRF7474TRPBF ,100V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) D Telecom and Data-Com 24 and 48V100V 63m@V = 10V 4.5A GS in ..
IRF7474TRPBF ,100V Single N-Channel HEXFET Power MOSFET in a SO-8 packageIRF7474PbFHEXFET Power MOSFET
ISL3283EIHZ-T , ±16.5kV ESD Protected, 125°C, 3.0V to 5.5V, SOT-23/TDFN Packaged, 20Mbps, Full Fail-safe, Low Power, RS-485/RS-422 Receivers
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IRF7473TRPBF
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package
International
TOR Rectifier
Applications
0 Telecom and Data-Com 24 and 48V
input DC-DC converters
0 Motor Control
q Uninterrutible Power Supply
PD- 95559
IRF7473PbF
HEXFET*) Power MOSFET
VDss RDS(on) max ID
100V 26mf2@Vss = 10V 6.9A
o Lead-Free
Benefits
. Ultra Low On-Resistance
q High Speed Switching D
. Low Gate Drive Current Due to Improved LCTE D
Gate Charge Characteristic 6
o Improved Avalanche Ruggedness and DE D
Dynamic dv/dt 5m: D
o Fully Characterized Avalanche Voltage . SO-8
and Current Top View
Typical SMPS Topologies
0 Full and Half Bridge 48V input Circuit
q Forward 24V input Circuit
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS © 10V 6.9
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 5.5 A
IDM Pulsed Drain Current (D 55
Po @TA = 25°C Power Dissipation 2.5 W
Linear Derating Factor 0.02 Wl°C
VGS Gate-to-Source Voltage * 20 V
dv/dt Peak Diode Recovery dv/dt © 5.8 V/ns
TJ Operating Junction and -55 to + 150
TSTG Storage Temperature Range ''C
Soldering Temperature, tor 10 seconds 300 (1.6mm from case )
Thermal Resistance
Symbol Parameter Typ. Max. Units
' Junction-to-Drain Lead - 20
ReJA Junction-to-Ambient G) - 50 °CNV
Notes co through © are on page 8
1
8/17/04
IRF7473PbF
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)ross Drain-to-Source Breakdown Voltage 100 - - V VGS = 0V, ID = 250pA
AVBFODSSIATJ Breakdown Voltage Temp. Coemcient - 0.11 - V/°C Reference to 25°C, ID = 1mA G)
RDS(on) Static Drain-to-Source On-Resistance - 22 26 mn Vss = 10V, ID = 4.1A ©
VSS(th) Gate Threshold Voltage 3.5 - 5.5 V Vros = VGs, ID = 250uA
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 95V, VGS = 0V
- - 250 Vos = 80V, VGS = 0V, To = 150°C
I Gate-to-Source Forward Leakage - - 100 n A VGS = 20V
GSS Gate-to-Source Reverse Leakage - - -100 VGS = -20V
Dynamic @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gis Forward Transconductance 10 - - S Vos = 50V, ID = 4.1A
Qg Total Gate Charge - 61 - lo = 4.1A
Qgs Gate-to-Source Charge - 21 - nC VDS = 50V
di Gate-to-Drain ("Miller") Charge - 19 - VGS = 10V,
tam) Turn-On Delay Time - 24 - VDD = 50V
tr Rise Time - 20 - ns ID = 4.1A
td(ott) Turn-Off Delay Time - 29 - RG = 6.09
if Fall Time - 11 - VGS = 10V ©
Ciss Input Capacitance - 3180 - N/ss = 0V
Cass Output Capacitance - 230 - Vros = 25V
Crss Reverse Transfer Capacitance - 120 - pF f = 1.0MHz
Cass Output Capacitance - 830 - VGs = 0V, VDs = 1.0V, f = 1.0MHz
Coss Output Capacitance - 150 - VGS = 0V, Vos = 80V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 230 - VGS = 0V, Vos = 0V to 80V ©
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 140 mJ
IAR Avalanche Current© - 4.1 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 2.3 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) co - - 55 p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V T: = 25°C, Is = 4.1A, I/ss = 0V ©
trr Reverse Recovery Time - 55 - ns To = 25°C, IF = 4.1A
Qrr Reverse RecoveryCharge - 140 - nC di/dt = 100A/ps ©
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