IRF7473 ,100V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) D Telecom and Data-Com 24 and 48V input DC-DC converters 100V ..
IRF7473TR ,100V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) D Telecom and Data-Com 24 and 48V input DC-DC converters 100V ..
IRF7473TRPBF ,100V Single N-Channel HEXFET Power MOSFET in a SO-8 packageIRF7473PbFHEXFET Power MOSFET
IRF7473TRPBF ,100V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplications Telecom and Data-Com 24 and 48VV R max I input DC-DC convertersDSS DS(on) D Moto ..
IRF7474 ,100V Single N-Channel HEXFET Power MOSFET in a SO-8 packagePD- 94097IRF7474®HEXFET Power MOSFET
IRF7474TR ,100V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) Dl Telecom and Data-Com 24 and 48V100V 63mΩ Ω Ω Ω Ω@V = 10V 4.5A G ..
ISL32175EIVZ , QUAD, ±16.5kV ESD Protected, 3.0V to 5.5V, RS-485/RS-422 Receivers
ISL32175EIVZ , QUAD, ±16.5kV ESD Protected, 3.0V to 5.5V, RS-485/RS-422 Receivers
ISL3283EIHZ-T , ±16.5kV ESD Protected, 125°C, 3.0V to 5.5V, SOT-23/TDFN Packaged, 20Mbps, Full Fail-safe, Low Power, RS-485/RS-422 Receivers
ISL34340 ,WSVGA 24-Bit Long-Reach Video SERDES with Bidirectional Side-ChannelBlock DiagramSCL2I CSDAVCMGENERATORRAM SERIOPPRE-TXEMPHASIS3V/H/DESERIONMUXTDM 8b/10bDEMUXRGB24RX E ..
ISL35411DRZ-T7 , Quad Driver
ISL36411DRZ-T7 , Quad Lane Extender
IRF7473-IRF7473TR
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package
PD- 94037B
llRF7473
H EXFET® Power MOSFET
International
TOR Rectifier
Applications
0 Telecom and Data-Com 24 and 48V VDSS RDS(on) max ID
input DC-DC converters 100V 26m§2@VGs = 10V 6.9A
o MotorControl
o Uninterrutible Power Supply
Benefits
o Ultra Low On-Resistance
0 High Speed _Switching S 'rm-l .8 D
0 Low Gate Drive Current Due to Improved S m2 7m: D
Gate Charge Characteristic E.
0 Improved Avalanche Ruggedness and S CUEa 5CD: D
Dynamic dv/dt G E4 s-CTE] D
0 Fully Characterized Avalanche Voltage
and Current Top View SO-8
Typical SMPS Topologies
0 Full and Half Bridge 48V input Circuit
o Forward 24V input Circuit
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 6.9
ID @ TA = 70°C Continuous Drain Current, Vas @ 10V 5.5 A
IDM Pulsed Drain Current C) 55
Po @TA = 25°C Power Dissipation 2.5 W
Linear Derating Factor 0.02 W/°C
VGS Gate-to-Source Voltage 1 20 V
dv/dt Peak Diode Recovery dv/dt G) 5.8 V/ns
TJ Operating Junction and -55 to + 150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Symbol Parameter Typ. Max. Units
Fur, Junction-to-Drain Lead - 2O
ReJA Junction-to-Ambient © - 50 °C/W
Notes co through © are on page 8
1
6/29/04
IRF7473
International
TOR Rectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(Bpmgss Drain-to-Source Breakdown Voltage 100 - - V Vss = 0V, ID = 250pA
M(BRwss/ATJ Breakdown Voltage Temp. Coefficient - 0.11 - V/°C Reference to 25°C, lo = 1mA ©
Roswn) Static Drain-to-Source On-Resistance - 22 26 m9 Vias = 10V, ID = 4.1A ©
VSS(th) Gate Threshold Voltage 3.5 - 5.5 V VDS = Vas, ID = 250pA
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 95V, Vas = 0V
- - 250 Vos = 80V, Vas = 0V, TI, = 150°C
I Gate-to-Source Forward Leakage - - 100 n A l/ss = 20V
GSS Gate-to-Source Reverse Leakage - - -100 Vss = -20V
Dynamic © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 10 - - S Vos = 50V, ID = 4.1A
% Total Gate Charge - 61 - ID = 4.1A
Qgs Gate-to-Source Charge -- 21 -- nC VDs = 50V
di Gate-to-Drain ("Miller") Charge - 19 - l/ss = 10V,
tdm) Turn-On Delay Time - 24 - VDD = 50V
tr Rise Time - 20 - ns ID = 4.1A
td(ott) Turn-Off Delay Time - 29 - Rs = 6.09
tf Fall Time - 11 - Vss = 10V ©
Ciss Input Capacitance - 3180 - Vias = 0V
Coss Output Capacitance - 230 - VDs = 25V
Crss Reverse Transfer Capacitance - 120 - pF f = 1.0MHz
Cass Output Capacitance - 830 - Vss = 0V, VDs = 1.0V, f = 1.0MHz
Cass Output Capacitance - 150 - Vss = 0V, Vos = 80V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 230 - Vss = 0V, Vos = 0V to 80V ©
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 140 mJ
IAR Avalanche Currenk0 - 4.1 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current _ - 2 3 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) C) - - 55 p-n junction diode. s
V30 Diode Forward Voltage -- -- 1.3 V Tu = 25°C, Is = 4.1A, Vss = 0V ©
trr Reverse Recovery Time - 55 - ns TJ = 25°C, IF = 4.1A
Qrr Reverse RecoveryCharge - 140 - nC di/dt = 100A/ps C3)
2
