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IRF7470TRPBF
40V Single N-Channel HEXFET Power MOSFET in a SO-8 package
International
Tart Rectifier
SMPS MOSFET
PD- 95276
IRF7470PbF
Applications HEXFET© Power MOSFET
0 High Frequency DC-DC Converters V R m ax I
with Synchronous Rectification DSS DS(on) D
o Lead-Free 40V 13mQ 10A
Benefits
0 Ultra-Low Gate Impedance
0 Very Low RDS(on) at 4.5V VGS S [3:1 83]] D
q Fully Characterized Avalanche Voltage s BIZ H 7:1: D
and Current s ce-' EL 63]] D
G DI" 51D D
Top View SO-8
Absolute Maximum Ratings
Symbol Parameter Max. Units
VDs Drain-Source Voltage 40 V
VGS Gate-to-Source Voltage i 12 V
In @ TA = 25°C Continuous Drain Current, VGS @ 10V 10
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 8.5 A
IDM Pulsed Drain Current© 85
Pro @TA = 25°C Maximum Power Dissipation© 2.5 W
PD @TA = 70°C Maximum Power Dissipation© 1.6 W
Linear Derating Factor 0.02 W/°C
T J , TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Symbol Parameter Typ. Max. Units
' Junction-to-Drain Lead - 20
RBJA Junction-to-Ambient (4) - 50 "C/W
Notes OD through GD are on page 8
1
8/11/04
IRF7470PbF International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 40 - - V VGS = 0V, ID = 250pA
AV
- 9.0 13 V63 =10V, ID = 10A (9
RDS(on) Static Drain-to-Source On-Resistance - 10 15 mg VGS = 4.5V, ID = 8.OA ©
- 14.5 30 VGS = 2.8V, ID = 5.0A ©
VGS(th) Gate Threshold Voltage 0.8 - 2.0 V Vos = VGS, ID = 250pA
loss Drain-to-Source Leakage Current _- _- 120% PA V: , 'lg,' x: __- g, T: = 125C
I Gate-to-Source Forward Leakage - - 200 n A VGS = 12V
GSS Gate-to-Source Reverse Leakage - - -200 VGs = -12V
Dynamic @ Tu = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 27 - - S Vos = 20V, ID = 8.0A
% Total Gate Charge - 29 44 ID = 8.0A
Qgs Gate-to-Source Charge - 7.9 12 nC VDS = 20V
Que Gate-to-Drain ("Miller") Charge - 8.0 12 l/GS = 4.5V ©
Qoss Output Gate Charge - 23 35 Was = 0V, l/DS = 16V
tdmn) Turn-On Delay Time - 10 - VDD = 20V
tr Rise Time - 1.9 - ns ID = 8.0A
td(off) Turn-Off Delay Time - 21 - Rs = 1.89
tf Fall Time - 3.2 - Vss = 4.5V ©
Ciss Input Capacitance - 3430 - VGS = 0V
Cass Output Capacitance - 690 - Vos = 20V
Crss Reverse Transfer Capacitance - 41 - pF f = 1.0MHz
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 300 ml
IAR Avalanche Current0) - 8.0 A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 2.3 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) (D - - 85 p-n junction diode. s
VSD Diode Forward Voltage - 0.80 1.3 V To = 2500 ls = 8.OA, VGS = 0V ©
- 0.65 - To = 125°C, ls = 8.0A, VGS = 0V
trr Reverse Recovery Time - 72 110 ns To = 25°C, IF = 8.0A, VR= 20V
Qrr Reverse Recovery Charge - 130 200 nC di/dt = 100Alps ©
trr Reverse Recovery Time - 76 110 ns T: = 125°C, IF = 8.0A, VR=20V
Qrr Reverse Recovery Charge - 150 230 nC di/dt = 100Alps ©
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