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IRF7468-IRF7468TR
40V Single N-Channel HEXFET Power MOSFET in a SO-8 package
PD - 93914D
International
TOR Rectifier SMPS MOSFET IRF7468
HEXFET® Power MOSFET
Applications Voss RDS(on) maximf2) ID
. High Frequency Isolated DC-DC
Converters with Synchronous Rectification 40V 15-5@VGS = 10V 9.4A
for Telecom and Industrial Use
. High Frequency Buck Converters for
Computer Processor Power
Benefits s [IE1 .83] D fftitis
0 Ultra-Low Gate Impedance S E E: E D 'riiTur''
0 Very Low RDS(on) at 4.5V l/GS s mf 5311 D _
. Fully Characterized Avalanche Voltage G DI" 5311 D
and Current . SO-8
Top View
Absolute Maximum Ratings
Symbol Parameter Max. Units
VDS Drain-Source Voltage 40 V
VGs Gate-to-Source Voltage l 12 V
ID @ TA = 25''C Continuous Drain Current, Vss @ 10V 9.4
In @ TA = 70''C Continuous Drain Current, Vss @ 10V 7.5 A
IDM Pulsed Drain Current© 75
Pro @TA = 25°C Maximum Power Dissipation 2.5 W
PD @TA = 70°C Maximum Power Dissipation 1.6 W
Linear Derating Factor 0.02 mW/°C
To , TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Symbol Parameter Typ. Max. Units
' Junction-to-Drain Lead - 20
ReJA Junction-to-Ambient © - 50 °CNV
Notes C) through © are on page 8
1
3/25/01
IRF7468
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 40 - - V VGS = 0V, ID = 250pA
AV
Roswn) Static Drain-to-Source On-Resistance - 11.7 15.5 l/ss = 10V, ID = 9.4A Cl)
- 13.0 17.0 mn VGS = 4.5V, ID = 7.5A ©
- 18.0 35.0 VGS = 4.5V, ID = 4.7A ©
VGS(th) Gate Threshold Voltage 0.8 - 2.0 V Vos = VGS, ID = 250PA
loss Drain-to-Source Leakage Current _- _- 12000 pA x: , :3 "jg, . g, T: = 125°C
ksss Gate-to-Source Forward Leakage - - 200 n A VGS = 12V
Gate-to-Source Reverse Leakage - - -200 VGs = -12V
Dynamic @ T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
Ts Forward Transconductance 27 - - S Vos = 20V, ID = 8.0A
% Total Gate Charge - 23 34 ID = 8.0A
Qgs Gate-to-Source Charge - 6.4 9.6 nC Vos = 20V
qu Gate-to-Drain ("Miller") Charge - 6.7 10 V65 = 4.5V, ©
Qoss Output Gate Charge - 17 26 N/ss = 0V, Vros = 16V
td(on) Turn-On Delay Time - 7.6 - VDD = 20V
tr Rise Time - 2.3 - ns ID = 8.0A
tam) Turn-Off Delay Time - 20 - RG = 1.89
If Fall Time - 3.8 - VGS = 4.5V ©
Ciss Input Capacitance - 2460 - VGs = 0V
Coss Output Capacitance - 490 - VDs = 20V
Crss Reverse Transfer Capacitance - 38 - pF f = 1.0MHz
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 160 mJ
IAR Avalanche Currentc0 - 8.0 A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 2.3 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current _ _ 74 integral reverse G
(Body Diode) G) p-n junction diode. s
Vso Diode Forward Voltage - 0.81 1.3 V TI, = 25°C. Is = 8.0A, Vss = 0V ©
- 0.65 - TJ = 125°C, ls = 8.0A, l/ss = 0V ©
trr Reverse Recovery Time - 45 68 ns TJ = 25°C, IF = 8.0A, VR=20V
Qrr Reverse Recovery Charge - 76 110 nC di/dt = 100Alps ©
trr Reverse Recovery Time - 58 87 ns TJ = 125°C, IF = 8.0A, VR=20V
Qrr Reverse Recovery Charge - 110 160 nC di/dt = 100A/ps ©
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