IRF7466 ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packagePD- 93884CIRF7466SMPS MOSFET®HEXFET Power MOSFET
IRF7466TRPBF ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplications HEXFET Power MOSFET High Frequency Isolated DC-DC Converters with Synchronous Rec ..
IRF7466TRPBF ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 package IRF7466PbFSMPS MOSFET
IRF7467 ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packagePD - 93883BIRF7467SMPS MOSFET®
IRF7467 ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsHEXFET Power MOSFETl High Frequency DC-DC IsolatedV R max IDSS DS(on) D ..
IRF7467 ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsHEXFET Power MOSFETl High Frequency DC-DC IsolatedV R max IDSS DS(on) D ..
ISL3158EIBZ , ±16.5kV ESD (IEC61000-4-2) Protected, Large Output Swing, 5V, Full Fail-Safe, 1/8 Unit Load, RS-485/RS-422 Transceivers
ISL3173EIUZ , ±15kV ESD Protected, 3.3V, Full Fail-Safe, Low Power, High Speed or Slew Rate Limited, RS-485/RS-422 Transceivers
ISL3173EIUZ , ±15kV ESD Protected, 3.3V, Full Fail-Safe, Low Power, High Speed or Slew Rate Limited, RS-485/RS-422 Transceivers
ISL32175EIVZ , QUAD, ±16.5kV ESD Protected, 3.0V to 5.5V, RS-485/RS-422 Receivers
ISL32175EIVZ , QUAD, ±16.5kV ESD Protected, 3.0V to 5.5V, RS-485/RS-422 Receivers
ISL3283EIHZ-T , ±16.5kV ESD Protected, 125°C, 3.0V to 5.5V, SOT-23/TDFN Packaged, 20Mbps, Full Fail-safe, Low Power, RS-485/RS-422 Receivers
IRF7466
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
PD- 93884C
International
TOR Rectifier SMPS MOSFET IRF7466
HEXFETO Power MOSFET
Applications
0 High Frequency Isolated DC-DC
Converters with Synchronous Rectification 30V 12-5@VGS = 10V IIA
for Telecom and Industrial Use
0 High Frequency Buck Converters for
VDss RDS(on) max(mf2) ID
Computer Processor Power
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ry DS(o-n) G E4 5:3: D
0 Fully Characterized Avalanche Voltage
and Current Top View SO-8
Absolute Maximum Ratings
Symbol Parameter Max. Units
Vos Drain-Source Voltage 30 V
Vss Gate-to-Source Voltage 1 20 V
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 11
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 9.0 A
IDM Pulsed Drain CurrentC) 90
Pro @TA = 25''C Maximum Power Dissipation® 2.5 W
Pro @TA = 70°C Maximum Power Dissipation® 1.6 W
Linear Derating Factor 0.02 mW/°C
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Symbol Parameter Typ. Max. Units
Ron, Junction-to-Drain Lead - 20
RNA Junction-to-Ambient © - 50 ''C/W
Notes C) through © are on page 8
1
3/25/01
IRF7466 International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V I/cs = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coemcient - 0.028 - V/°C Reference to 25°C, ID = 1mA
. . . - 9.8 12.5 Vcs =10V,ID = 11A co
RDS(on) Static Drain-to-Source On-Resistance - 13 17 mn VGS = 4.5V, ID = 8.8 A ©
VGS(th) Gate Threshold Voltage 1.0 - 3.0 V VDs = VGs, ID = 250pA
loss Drain-to-Source Leakage Current - - 20 PA Vros = 24V, VGS = 0V
- - 100 Vos = 24V, VGS = 0V, To = 125''C
less Gate-to-Source Forward Leakage - - 200 n A VGS = 16V
Gate-to-Source Reverse Leakage - - -200 I/cs = -16V
Dynamic @ T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 22 - - S Vros = 15V, ID = 8.8A
% Total Gate Charge - 16 23 ID = 8.8A
Qgs Gate-to-Source Charge - 7.4 11 nC Ws = 15V
qu Gate-to-Drain ("Miller") Charge - 5.3 8.0 V33 = 4.5V ©
Qoss Output Gate Charge - 19 29 VGS = ov, I/os = 15V
tdmn) Turn-On Delay Time - 1O - VDD = 15V
tr Rise Time - 2.8 - ns ID = 8.8A
td(off) Turn-Off Delay Time - 13 - Rs = 1.89
tr Fall Time - 3.6 - VGs = 4.5V ©
Ciss Input Capacitance - 2100 - VGS = 0V
Coss Output Capacitance - 710 - Vos = 15V
Crss Reverse Transfer Capacitance - 52 - pF f = 1.0MHz
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 230 mJ
IAR Avalanche Current(0 - 8.8 A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current _ - 2 3 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) C) - - 90 p-n junction diode. s
VsD Diode Forward Voltage - 0.8 1.3 v To = 25°C, ls = 8.8A, veg = 0v ©
- 0.66 - To = 125°C, ls = 8.8A, VGS = 0V ©
trr Reverse Recovery Time - 42 63 ns To = 25°C, IF = 8.8A, VR=15V
Qrr Reverse Recovery Charge - 59 89 nC di/dt = 100Alps ©
trr Reverse Recovery Time - 42 63 ns To = 125°C, IF = 8.8A, VR=15V
Qrr Reverse Recovery Charge - 61 92 nC di/dt = 1OOA/ps co
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