IRF7463TRPBF ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsHEXFET Power MOSFET High Frequency DC-DC Isolated Converters with Synchronous Re ..
IRF7464 ,200V Single N-Channel HEXFET Power MOSFET in a SO-8 packagePD- 93895IRF7464SMPS MOSFET®HEXFET Power MOSFET
IRF7464 ,200V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) Dl High frequency DC-DC converters200V 0.73Ω 1.2ABenefitsl Low Gate ..
IRF7464TRPBF ,200V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) D High frequency DC-DC converters200V 0.73Ω 1.2A Lead-FreeBenefit ..
IRF7464TRPBF ,200V Single N-Channel HEXFET Power MOSFET in a SO-8 package IRF7464PbFSMPS MOSFETHEXFET Power MOSFET
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ISL3092IR-TK , 11GHz VCO
ISL3092IR-TK , 11GHz VCO
ISL3092IR-TK , 11GHz VCO
ISL31498EIUZ , ±60V Fault Protected, 5V, RS-485/RS-422 Transceivers with ±25V Common Mode Range
ISL3152EIBZ , ±16.5kV ESD (IEC61000-4-2) Protected, Large Output Swing, 5V, Full Fail-Safe, 1/8 Unit Load, RS-485/RS-422 Transceivers
ISL3152EIBZ , ±16.5kV ESD (IEC61000-4-2) Protected, Large Output Swing, 5V, Full Fail-Safe, 1/8 Unit Load, RS-485/RS-422 Transceivers
IRF7463TRPBF
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
International PD-95248
Tait Rectifier SMPS MOSFET IRF7463PbF
Applications HEXFET© Power MOSFET
. High Frequency DC-DC Isolated
Converters with Synchrpnous Rectification VDSS RDS(on) max In
for Telecom and Industrial use 30V 8mg 14A
o High Frequency Buck Converters for
Computer Processor Power
0 Lead-Free
Benefits
. Ultra-Low Gate Impedance s DI‘ 8 D
0 Very Low RDS(on) at 4.5V VGS S DI E: CED D
q Fully Characterized Avalanche Voltage s [I LID D
and Current G m4 5m: D
Top View
Absolute Maximum Ratings
Symbol Parameter Max. Units
VDs Drain-Source Voltage 30 V
Vas Gate-to-Source Voltage 1 12 V
In @ TA = 25°C Continuous Drain Current, Vas @ 10V 14
ID © TA = 70°C Continuous Drain Current, l/ss @ 10V 11 A
G, Pulsed Drain CurrentC) 110
PD @TA = 25°C Maximum Power Dissipation 2.5 W
PD @TA = 70°C Maximum Power Dissipation 1.6 W
Linear Derating Factor 0.02 mW/°C
T J , TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Symbol Parameter Typ. Max. Units
RM Junction-to-Drain Lead © --- 20
RNA Junction-to-Ambient cos - 50 °C/W
Notes (D through (D are on page 8
1
10/12/04
IRF7463PbF
International
Static © To = 25°C (unless otherwise specified) TOR Rectifier
Parameter Min. Typ. Max. Units Conditions
V(Bmoss Drain-to-Source Breakdown Voltage 30 - - V Vss = 0V, ID = 250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coefficient - 0.029 - V/°C Reference to 25°C, ID = 1mA
-- 6.0 8.0 I/es =10v, ID = 14A ©
Roswn, Static Drain-to-Source On-Resistance _ 7.0 9.5 mf2 Vos = 4.5V, ID = 11A ©
10.5 20 VGS = 2.7V, ID = 7.0A ©
Vas(th) Gate Threshold Voltage 0.6 - 2.0 V Vos = VGs, ID = 250pA
loss Drain-to-Source Leakage Current : : 12:0 PA x3: : ::x x: : 8x To = 125°C
less Gate-to-Source Forward Leakage - - 200 nA I/css = 12V
Gate-to-Source Reverse Leakage - - -2OO Ves = -12V
Dynamic @ Tu = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 41 - - S Vos = 24V, ID = 11A
Qg Total Gate Charge - 34 51 ID = 11A
095 Gate-to-Source Charge - 7.6 11.4 nC l/rs = 15V
qu Gate-to-Drain ("Miller") Charge - 12 18 Vas = 4.5V 6)
Qoss Output Gate Charge - 21 32 Vai; = 0V, Vos = 15V
td(on) Turn-On Delay Time - 16 - VDD = 15V
tr Rise Time - 138 - ns ID = 11A
tum) Turn-Off Delay Time - 28 - Rs = 1.89
tt Fall Time - 6.5 - Vas = 4.5V 6)
Ciss Input Capacitance - 3150 - Vas = 0V
Coss Output Capacitance - 1070 - Vos = 15V
Crss Reverse Transfer Capacitance - 180 - pF f = 1.0MHz
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 320 mJ
IAR Avalanche Current© - 14 A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 2.3 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 1 10 integral reverse G
(Body Diode) (D p-n junction diode. s
VsD Diode Forward Voltage - 0.52 1.3 V To = 25°C ls = IIA, Vas = 0V ©
- 0.44 - TJ =125°C, ls =11A,VGs = 0V ©
tn Reverse Recovery Time - 45 70 ns Tu = 25°C, IF = 11A, VR=15V
Qrr Reverse Recovery Charqe -- 65 100 nC di/dt = 1OOA/us G)
trr Reverse Recovery Time - 50 75 ns TJ = 125°C, IF = 11A, VR=15V
Qrr Reverse Recovery Charge - 80 120 nC di/dt = 100A/ps ©
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