IRF7460TR ,20V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max(mΩ) Ω) Ω) Ω) Ω) IDSS DS(on) Dl High Frequency Isolated DC-DC20V 10@V = 10V 12A ..
IRF7460TRPBF ,20V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplications High Frequency Isolated DC-DCV R max(m IDSS DS(on) D Converters with Synchronous ..
IRF7463 ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsHEXFET Power MOSFET High Frequency DC-DC Isolated Converters with Synchronous Re ..
IRF7463TRPBF ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsHEXFET Power MOSFET High Frequency DC-DC Isolated Converters with Synchronous Re ..
IRF7464 ,200V Single N-Channel HEXFET Power MOSFET in a SO-8 packagePD- 93895IRF7464SMPS MOSFET®HEXFET Power MOSFET
IRF7464 ,200V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) Dl High frequency DC-DC converters200V 0.73Ω 1.2ABenefitsl Low Gate ..
ISL3092IR-TK , 11GHz VCO
ISL3092IR-TK , 11GHz VCO
ISL3092IR-TK , 11GHz VCO
ISL31498EIUZ , ±60V Fault Protected, 5V, RS-485/RS-422 Transceivers with ±25V Common Mode Range
ISL3152EIBZ , ±16.5kV ESD (IEC61000-4-2) Protected, Large Output Swing, 5V, Full Fail-Safe, 1/8 Unit Load, RS-485/RS-422 Transceivers
ISL3152EIBZ , ±16.5kV ESD (IEC61000-4-2) Protected, Large Output Swing, 5V, Full Fail-Safe, 1/8 Unit Load, RS-485/RS-422 Transceivers
IRF7460-IRF7460TR
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
PD - 93886D
International
TOR Rectifier SMPS MOSFET IRF7460
HEXFET© Power MOSFET
Applications
0 High Frequency Isolated DC-DC
Converters with Synchronous Rectification 20V 10@Vas = 10V 12A
for Telecom and Industrial Use
0 High Frequency Buck Converters for
VDss RDS(on) max(mf2) ID
Computer Processor Power
. 1 ' 8
Benefits S LIE IUD bt .
s E2 H 71:: D _ x . I
o Ultra-Low Gate Impedance 3 (trf 6 ffff/
S CU: ID D =
. Very Low RDS(on)
0 Fully Characterized Avalanche Voltage G E E D so
and Current Top View
Absolute Maximum Ratings
Symbol Parameter Max. Units
VDS Drain-Source Voltage 20 V
Vss Gate-to-Source Voltage , 20 V
In @ TA = 25°C Continuous Drain Current, VGS @ 10V 12
ID @ TA = 70''C Continuous Drain Current, VGS © 10V 10 A
IDM Pulsed Drain CurrentC) 100
Po @TA = 25°C Maximum Power Dissipation® 2.5 W
Pro @TA = 70°C Maximum Power Dissipation® 1.6 W
Linear Derating Factor 0.02 mW/°C
To ' TSTG Junction and Storage Temperature Range -55 to + 150 "C
Thermal Resistance
Symbol Parameter Typ. Max. Units
Ron, Junction-to-Drain Lead - 20
RNA Junction-to-Ambient co - 50 ''C/W
Notes C) through S are on page 8
1
3/25/01
IRF7460
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 - - V I/cs = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coemcient - 0.089 - V/°C Reference to 25°C, ID = 1mA
. . . - 7.2 10 VGs=10V,ID=12A ©
RDS(on) Static Drain-to-Source On-Resistance 10.5 14 mn VGS = 4.5V, ID = 9.6 A (D
VGS(th) Gate Threshold Voltage 1.0 - 3.0 V VDs = VGs, ID = 250pA
loss Drain-to-Source Leakage Current - - 20 pA Vros = 16V, VGS = 0V
- - 100 Vos = 16V, VGS = 0V, To = 125°C
less Gate-to-Source Forward Leakage - - 200 n A VGS = 16V
Gate-to-Source Reverse Leakage - - -200 I/cs = -16V
Dynamic @ T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 26 - - S Vros = 16V, ID = 9.6A
% Total Gate Charge - 19 - ID = 9.6A
Qgs Gate-to-Source Charge - 6.9 - nC Ws = 10V
qu Gate-to-Drain ("Miller") Charge - 6.0 - VGS = 4.5V, Cr)
Qoss Output Gate Charge - 17 26 V63 = 0V, Vos = 10V
tdmn) Turn-On Delay Time - 11 - VDD = 10V
tr Rise Time - 6.9 - ns ID = 9.6A
td(off) Turn-Off Delay Time - 12 - Rs = 1.89
tr Fall Time - 4.3 - VGs = 4.5V co
Ciss Input Capacitance - 2050 - VGS = 0V
Coss Output Capacitance - 1060 - Vos = 10V
Crss Reverse Transfer Capacitance - 150 - pF f = 1.0MHz
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 240 mJ
IAR Avalanche Currentc0 - 9.6 A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current _ - 2 3 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) C) - - 100 p-n junction diode. s
VsD Diode Forward Voltage - 0.8 1.3 v To = 25°C, ls = 9.6A, veg = 0v ©
- 0.66 - To = 125°C, Is = 9.6A, VGS = 0V CO
trr Reverse Recovery Time - 44 66 ns To = 25°C, IF = 9.6A, VR=10V
Qrr Reverse Recovery Charge - 60 90 nC di/dt = 100Alps ©
trr Reverse Recovery Time - 44 66 ns To = 125°C, IF = 9.6A, VR=10V
Qrr Reverse Recovery Charge - 64 96 nC di/dt = 100A/ps Cr)
2
