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IRF7458TRPBF
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
PD- 95268
International
TOR Rectifier SMPS MOSFET |RF7458PbF
Applications HEXFET® Power MOSFET
o High Frequency Isolated DC-DC V R max I
Converters with Synchronous Rectification DSS DS(on) D
for Telecom and Industrial Use 30V 8.0mQ 14A
o High Frequency Buck Converters for
Computer Processor Power
o Lead-Free
Benefits SDI‘ 'BIDD
o Ultra-Low Gate Impedance s DIE HI 7333 D
0 Very Low RDS(on) S ES _ 6:lIJ D
q Fully Characterized Avalanche Voltage G E4 53:: D
and Current
T . SO-8
op View
Absolute Maximum Ratings
Symbol Parameter Max. Units
VDS Drain-Source Voltage 30 V
VGS Gate-to-Source Voltage * 30 V
In @ TA = 25°C Continuous Drain Current, VGS @ 10V 14
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 11 A
IDM Pulsed Drain Current© 110
PD @TA = 25°C Maximum Power Dissipation@ 2.5 W
Po @TA = 70°C Maximum Power Dissipation@ 1.6 W
Linear Derating Factor 0.02 mW/°C
T J ' TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Symbol Parameter Typ. Max. Units
Ron, Junction-to-Drain Lead - 20
RQJA Junction-to-Ambient G) - 50 ''C/W
Notes OD through G) are on page 8
1
8/17/04
IRF7458PbF International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V VGs = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coemcient - 0.029 - V/°C Reference to 25°C, ID = 1mA
. . . - 6.3 8.0 VGs = 16V, ID = 14A (3)
- - - Q
RDS(on) Static Drain to Source On Resistance - 7.0 9.0 m VGS = 10V, ID = 11A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos = VGS, ID = 250pA
. - - 20 Vos = 24V, VGS = OV
I Drain-to-Source Leaka e Current A
DSS g - - 100 u Vros = 24V, VGS = 0v, To = 125°C
less Gate-to-Source Forward Leakage - - 200 n A VGS = 24V
Gate-to-Source Reverse Leakage - - -200 VGs = -24V
Dynamic © Tu = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 26 - - S Vos = 15V, ID = 11A
% Total Gate Charge - 39 59 ID = 11A
Qgs Gate-to-Source Charge - 11 17 nC Vros = 15V
Que Gate-to-Drain ("Miller") Charge - 8.7 13 VGS = 10V ©
Qoss Output Gate Charge - 29 44 Kas = 0V, VDs = 16V
tdmn) Turn-On Delay Time - 10 - VDD = 15V
tr Rise Time - 4.6 - ns lo = 11A
td(off) Turn-Off Delay Time - 22 - Rs = 1.8Q
tf Fall Time - 5.0 - VGS = 10V ©
Ciss Input Capacitance - 2410 - VGS = 0V
Cass Output Capacitance - 1100 - VDs = 15V
Crss Reverse Transfer Capacitance - 110 - pF f = 1.0MHz
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 280 m]
IAR Avalanche Current© - 11 A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current 2 3 MOSFET symbol D
(Body Diode) - - . A showing the
ISM Pulsed Source Current 110 integral reverse G
(Body Diode) (D - - p-n junction diode. s
VSD Diode Forward Voltage - 0.82 1.3 V TJ = 25''C, Is = 11A, VGS = 0V ©
- 0.68 - TJ = 125°C, Is = 11A, VGS = 0V
trr Reverse Recovery Time - 51 77 ns TJ = 25°C, IF = 11A, VR= 20V
Qrr Reverse Recovery Charge - 87 130 nC di/dt = 100/Ups ©
trr Reverse Recovery Time - 52 78 ns T: = 125°C, IF = 11A, VR=20V
Qrr Reverse Recovery Charge - 93 140 nC di/dt = 100A/ps ©
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