IRF7455TR ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packagePD- 93842BIRF7455SMPS MOSFET®HEXFET Power MOSFET
IRF7455TRPBF ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplications
. High Frequency DC-DC Converters
with Synchronous Rectification
Benefits
0 ..
IRF7456 ,20V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) D High Frequency DC-DC Converters 20V 0.0065Ω 16A with Synchr ..
IRF7456PBF , SMPS MOSFET
IRF7456TR ,20V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) D High Frequency DC-DC Converters 20V 0.0065Ω 16A with Synchr ..
IRF7456TRPBF ,20V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) D High Frequency DC-DC Converters 20V 0.0065Ω 16A with Synchr ..
ISL29003IROZ-T7 , Light-to-Digital Output Sensor with High Sensitivity, Gain Selection, Interrupt Function and I2C Interface
ISL29018IROZ-T7 , Digital Ambient Light Sensor and Proximity Sensor with Interrupt Function
ISL29023IROZ-T7 , Integrated Digital Ambient Light Sensor with Interrupt Function
ISL29023IROZ-T7 , Integrated Digital Ambient Light Sensor with Interrupt Function
ISL29028AIROZ-T7 , Low Power Ambient Light and Proximity Sensor with Intelligent Interrupt and Sleep Modes
ISL29028IROZ-T7 , Low Power Ambient Light and Proximity Sensor with Intelligent Interrupt
IRF7455-IRF7455TR
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
International
TOR Rectifier
SMPS MOSFET
PD- 93842B
HEXFET0 Power MOSFET
App-lications Voss RDS(on) max ID
0 High Frequency DC-DC Converters 30V 0 00759 15A
with Synchronous Rectification .
Benefits
0 Ultra-Low RDs(on) at 4.5V VGS
o Low Charge and Low Gate Impedance to S m1 '8 D
Reduce Switching Losses S m2 '-mn D fi,stiiiti,s
o Fully Characterized Avalanche Voltage 3 E: ''ri'ls'''/"
and Current s DE E D J
G D334 5 CW] D
Top View SO-8
Absolute Maximum Ratings
Symbol Parameter Max. Units
Vros Drain-Source Voltage 30 V
VGs Gate-to-Source Voltage i 12 V
ID @ TA = 25°C Continuous Drain Current, I/ss @ 10V 15
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 12 A
IDM Pulsed Drain Current0) 120
Pro @TA = 25°C Maximum Power Dissipation® 2.5 W
Pro @TA = 70°C Maximum Power Dissipation© 1.6 W
Linear Derating Factor 0.02 W/°C
T J , TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Parameter Max. Units
ReJA Maximum Junction-to-Ambient) 50 "C/W
Typical SMPS Topologies
. Telecom 48V Input Converters with Logic-Level Driven Synchronous Rectifiers
Notes co through (D are on page 8
1
IRF7455 International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BRpss Drain-to-Source Breakdown Voltage 30 - - V I/cs = 0V, ID = 250pA
AV
- 0.00600.0075 n VGS = 10V, ID = 15A Ci)
RDS(on) Static Drain-to-Source On-Resistance - 0.0069 0.009 VGS = 4.5V, ID = 12A Ci)
- 0.010 0.020 VGs = 2.8V, ID = 3.5A Cr)
Vegan) Gate Threshold Voltage 0.6 - 2.0 V Vros = Was, ID = 250PA
loss Drain-to-Source Leakage Current _- : 12000 HA x3: , 32x It , g, TJ = 125°C
I Gate-to-Source Forward Leakage - - 200 A VGS = 12V
GSS Gate-to-Source Reverse Leakage - - -200 n VGS = -12V
Dynamic @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
9ts Forward Transconductance 44 - - S Vos = 10V, ID = 15A
09 Total Gate Charge - 37 56 lo = 15A
095 Gate-to-Source Charge - 8.9 13 no Vos = 24V
di Gate-to-Drain ("Miller") Charge - 13 20 Vss = 5.0V, ©
tam) Turn-On Delay Time - 17 - VDD = 15V
tr Rise Time - 18 - ns ID = 1.0A
td(oit) Turn-Off Delay Time - 51 - RG = 6.09
tr Fall Time - 44 - VGS = 4.5V ©
Ciss Input Capacitance - 3480 - VGs = 0V
Coss Output Capacitance - 870 - Vros = 25V
Crss Reverse Transfer Capacitance - 100 - pF f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 200 mJ
IAR Avalanche Current0) - 15 A
EAR Repetitive Avalanche Energyc0 - 0.25 ml
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current _ - 2 5 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current - - 120 integral reverse G
(Body Diode) co p-n junction diode. s
VSD Diode Forward Voltage - - 1.2 v T J = 25°C, ls = 2.5A, sz = 0v co
trr Reverse Recovery Time - 64 96 ns TJ = 25°C, IF = 2.5A
Qrr Reverse RecoveryCharge - 99 150 nC di/dt = 100/Ups ©
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