IRF7453TRPBF ,250V Single N-Channel HEXFET Power MOSFET in a SO-8 package IRF7453PbFSMPS MOSFETHEXFET Power MOSFET
IRF7453TRPBF ,250V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) D High frequency DC-DC converters250V 0.23@V = 10V 2.2A GS Lead ..
IRF7455 ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) Dl High Frequency DC-DC Converters 30V 0.0075Ω 15A with Synchr ..
IRF7455 ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) Dl High Frequency DC-DC Converters 30V 0.0075Ω 15A with Synchr ..
IRF7455TR ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packagePD- 93842BIRF7455SMPS MOSFET®HEXFET Power MOSFET
IRF7455TRPBF ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplications
. High Frequency DC-DC Converters
with Synchronous Rectification
Benefits
0 ..
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IRF7453TRPBF
250V Single N-Channel HEXFET Power MOSFET in a SO-8 package
International
Tart, Rectifier
Applications
0 High frequency DC-DC converters
o Lead-Free
SMPS MOSFET
PD- 95307
IRF7453PbF
HEXFET© Power MOSFET
RDS(on) max
0.23Q@Ves = 10V
Benefits
q Low Gate to Drain Charge to Reduce B
Switching Losses L D
q Fully Characterized Capacitance Including 7:13: D
Effective Coss to Simplify Design (See em: D
App. Note AN1001) 5
. Fully Characterized Avalanche Voltage DE D
n rr nt .
a d Cu e Top View
Absolute Maximum Ratings
Parameter Max. Units
ID © TA = 25°C Continuous Drain Current, Vss @ 10V 2.2
ID @ TA = 70°C Continuous Drain Current, l/ss @ 10V 1.7 A
IDM Pulsed Drain Current C) 17
PD @TA = 25°C Power Dissipation) 2.5 W
Linear Derating Factor 0.02 W/°C
l/ss Gate-to-Source Voltage t 30 V
dv/dt Peak Diode Recovery dv/dt © 13 V/ns
To Operating Junction and -55 to + 150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Symbol Parameter Typ. Max. Units
fur, Junction-to-Drain Lead - 20
ReJA Junction-to-Ambient © - 50 °C/W
Notes co through © are on page 8
1
10/12/04
IRF7453PbF International
TOR Rectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 250 - - V Vas = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.33 - V/°C Reference to 25°C, ID = 1mA ©
RDS(on) Static Drain-to-Source On-Resistance - 0.23 Q Vss = 10V, ID = 1.3A ©
VGS(th) Gate Threshold Voltage 3.0 - 5.5 V Vos = Vas, ID = 250pA
loss Drain-to-Source Leakage Current - - 25 pA Vros = 250V, l/ss = 0V
- - 250 VDs = 200V, Vss = 0V, To = 150°C
I Gate-to-Source Forward Leakage - - 100 n A Vas = 24V
GSS Gate-to-Source Reverse Leakage - - -100 Vas = -24V
Dynamic © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 1.8 - - S Vos = 50V, ID = 1.3A
Qg Total Gate Charge - 25 38 ID = 1.3A
Qgs Gate-to-Source Charge - 6.0 9.0 nC Vos = 200V
di Gate-to-Drain ("Miller") Charge - 11 17 Vss = 10V,
tdwn) Turn-On Delay Time - 9.0 - VDD = 125V
t, Rise Time - 2.5 - ns ID = 1.3A
td(oit) Turn-Off Delay Time - 19 - Rs = 6.09
if Fall Time - 20 - Vas = 10V ©
Ciss Input Capacitance - 930 - l/ss = 0V
COSS Output Capacitance - 130 - Vos = 25V
Crss Reverse Transfer Capacitance - 23 - pF f = 1.0MHz
Coss Output Capacitance - 1050 - Vss = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 52 - Vas = 0V, VDS = 200V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 96 - Vas = 0V, VDs = 0V to 200V ©
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 200 mJ
IAR Avalanche CurrentCD - 2.2 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current _ - 2 3 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) co - - 17 p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V T, = 25°C, Is = 1.3A, VGs = 0V ©
trr Reverse Recovery Time - 98 150 ns TJ = 25°C, IF = 1.3A
Qrr Reverse RecoveryCharge - 340 510 nC di/dt = 100A/ps ©
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